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相关论文: Monolayer Semiconductor Auger Detector

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The intriguing physics of carrier-carrier interactions, which likewise affect the operation of light emitting devices, stimulate the research on semiconductor structures at high densities of excited carriers, a limit reachable at large…

In this letter, we present non-degenerate ultrafast optical pump-probe studies of the carrier recombination dynamics in MoS$_{2}$ monolayers. By tuning the probe to wavelengths much longer than the exciton line, we make the probe…

介观与纳米尺度物理 · 物理学 2015-06-22 Haining Wang , Changjian Zhang , Farhan Rana

The Auger recombination in bulk semiconductors can depopulate the charge carriers in a non-radiative way, which, fortunately, only has detrimental impact on optoelectronic device performance under the condition of high carrier density…

化学物理 · 物理学 2020-02-07 Hongyan Liao , Yunyan Fan , Yumei Lin , Kang Wang , Renfu Li , Xueyuan Chen , Kelvin H. L. Zhang , Ye Yang

We propose a novel phonon assisted Auger process unique to the electronic band structure of monolayer transition metal dichalcogenides (TMDCs), which dominates the radiative recombination of ground state excitons in Tungsten based TMDCs.…

介观与纳米尺度物理 · 物理学 2016-09-12 Mark Danovich , Viktor Zólyomi , Igor L. Aleiner , Vladimir I. Fal'ko

Recent photoluminescence experiments presented by M. Binder et al. [Appl. Phys. Lett. 103, 071108 (2013)] demonstrated the visualization of high-energy carriers generated by Auger recombination in (AlInGa)N multi quantum wells. Two…

The principal mechanisms of Auger recombination of nonequilibrium carriers in semiconductor heterostructures with quantum wells are investigated. It is shown for the first time that there exist three fundamentally different Auger…

材料科学 · 物理学 2009-10-31 Anatoli S. Polkovnikov , Georgy G. Zegrya

Spectroscopic studies of semiconductor quantum dots (SQDs) addressing the problem of non-radiative carrier losses is vital for the improvement in the efficiency of various light-emitting devices. Various designs of SQDs emitter like doping,…

介观与纳米尺度物理 · 物理学 2020-08-07 Sabina Gurung , Asha Singh , J. Jayabalan

Auger recombination is a non-radiative process, where the recombination energy of an electron-hole pair is transferred to a third charge carrier. It is a common effect in colloidal quantum dots that quenches the radiative emission with an…

介观与纳米尺度物理 · 物理学 2020-04-22 Pia Lochner , Annika Kurzmann , Jens Kerski , Philipp Stegmann , Jürgen König , Andreas D. Wieck , Arne Ludwig , Axel Lorke , Martin Geller

In a multi-electron atom, an excited electron can decay by emitting a photon. Typically, the leftover electrons are in their ground state. In a radiative Auger process, the leftover electrons are in an excited state and a redshifted photon…

In quantum dots (QDs) the Auger recombination is a non-radiative process, where the electron-hole recombination energy is transferred to an additional carrier. It has been studied mostly in colloidal QDs, where the Auger recombination time…

介观与纳米尺度物理 · 物理学 2019-07-03 Annika Kurzmann , Arne Ludwig , Andreas D. Wieck , Axel Lorke , Martin Geller

In semiconductor nanostructures nonradiative Auger recombination is enhanced by the presence of boundaries which relax the momentum conservation and thereby removes the threshold reduction for these processes. We propose a method to…

介观与纳米尺度物理 · 物理学 2016-03-11 Alexander Khaetskii , Igor Žutić

In a semiconductor heterostructure with type II energy band alignment, the spatial separation between electrons and holes slows down their radiative recombination. With increasing excitation intensity, Auger recombination quickly becomes…

材料科学 · 物理学 2008-09-09 E. -K. Lee , D. J. Lockwood , J. -M. Baribeau , A. M. Bratkovsky , T. I. Kamins , L. Tsybeskov

Auger recombination is an important non-radiative carrier recombination mechanism in many classes of optoelectronic devices. The microscopic Auger processes can be either direct or indirect, mediated by an additional scattering mechanism…

The exceptionally strong Coulomb interaction in semiconducting transition-metal dichalcogenides (TMDs) gives rise to a rich exciton landscape consisting of bright and dark exciton states. At elevated densities, excitons can interact through…

Ultrafast electron thermalization - the process leading to Auger recombination, carrier multiplication via impact ionization and hot carrier luminescence - occurs when optically excited electrons in a material undergo rapid…

In a recent letter [Phys. Rev. Lett. 110, 177406 (2013)], presenting a spectroscopic study of the electrons emitted from the GaN p-cap of a forward-biased InGaN/GaN light-emitting diode (LED), the authors observed at least two distinct…

介观与纳米尺度物理 · 物理学 2013-05-29 Francesco Bertazzi , Michele Goano , Xiangyu Zhou , Marco Calciati , Giovanni Ghione , Masahiko Matsubara , Enrico Bellotti

The rate at which excited charge carriers relax to their equilibrium state affects many aspects of the performance of nanoscale devices, including switching speed, carrier mobility and luminescent efficiency. Better understanding of the…

介观与纳米尺度物理 · 物理学 2015-06-25 Marc Achermann , Andrew P. Bartko , Jennifer A. Hollingsworth , Victor I. Klimov

A growing interest in colloidal quantum dot (QD) based light-emitting diodes (QD-LEDs) has been motivated by the exceptional color purity and spectral tunability of QD emission as well as the amenability of QD materials to highly scalable…

In quantum dots (QDs) the Auger recombination is a non-radiative scattering process in which the optical transition energy of a charged exciton (trion) is transferred to an additional electron leaving the dot. Electron tunneling from a…

介观与纳米尺度物理 · 物理学 2023-10-23 Marcel Zöllner , Hendrik Mannel , Fabio Rimek , Britta Maib , Nico Schwarz , Andreas D. Wieck , Arne Ludwig , Axel Lorke , Martin Geller

Auger processes play a critical role in the behavior of colloidal quantum dots (QDs). While nonradiative Auger recombination is a key performance-limiting factor in light-emitting applications, Auger effects also present exciting…

介观与纳米尺度物理 · 物理学 2025-04-29 Valerio Pinchetti , Ho Jin , Clément Livache , Victor I. Klimov
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