相关论文: Experimental observations indicating the topologic…
Two-dimensional (2D) topological insulators (TIs) with a large bulk band-gap are promising for experimental studies of the quantum spin Hall effect and for spintronic device applications. Despite considerable theoretical efforts in…
We report an atomic-scale characterization of ZrTe$_5$ by using scanning tunneling microscopy. We observe a bulk bandgap of ~80 meV with topological edge states at the step edge, and thus demonstrate ZrTe$_5$ is a two dimensional…
Topological insulators have gapless edge/surface states with novel transport properties. Among these, there are two classes of perfectly conducting channels which are free from backscattering: the edge states of two-dimensional topological…
ZrTe$_5$ and HfTe$_5$ have attracted increasingly attention recently since the theoretical prediction of being topological insulators (TIs). However, subsequent works show many contradictions about their topological nature.Three possible…
Topological states emerge at the boundary of solids as a consequence of the nontrivial topology of the bulk. Recently, theory predicts a topological edge state on single layer transition metal dichalcogenides with 1T' structure. However,…
Electron tunneling through a single magnetic barrier in a HgTe topological insulator has been theoretically investigated. We find that the perpendicular magnetic field would not lead to spin-flip of the edge states due to the conservation…
The topological materials have attracted much attention recently. While three-dimensional topological insulators are becoming abundant, two-dimensional topological insulators remain rare, particularly in natural materials. ZrTe5 has host a…
We present our investigations on the superconducting properties of monolayers of FeSe$_{0.5}$Te$_{0.5}$ grown on the 3D topological insulator Bi$_{2}$Se$_{1.2}$Te$_{1.8}$ using low temperature scanning tunneling spectroscopy (STS). While…
Helical edge modes are characteristic of topological insulators in two dimensions. This paper demonstrates that helical edge modes remain across transitions to ordinary insulators or to semimetals under certain condition. Straight and…
A single monolayer of the layered semimetal WTe2 behaves as a two-dimensional topological insulator, with helical conducting edge modes surrounding a bulk state that becomes insulating at low temperatures. Here we present evidence that the…
Our experimental studies of electron transport in wide (14 nm) HgTe quantum wells confirm persistence of a two-dimensional topological insulator state reported previously for narrower wells, where it was justified theoretically. Comparison…
Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator, but have protected conducting states on their edge or surface. The 2D topological insulator is a quantum spin Hall insulator, which is a…
Surface states of topological insulators (TIs) have been playing the central role in the majority of outstanding investigations in low-dimensional electron systems for more than 10 years. TIs based on high-quality strained HgTe films…
Topological states of matter have attracted a lot of attention due to their many intriguing transport properties. In particular, two-dimensional topological insulators (2D TI) possess gapless counter propagating conducting edge channels,…
Topological insulators are characterized by spin-momentum-locked massless surface states which are robust under various perturbations. Manipulating such surface states is a topic of vigorous research, as a possible route for the realization…
Topological effects in edge states are clearly visible on short lengths only, thus largely impeding their studies. On larger distances, one may be able to dynamically enhance topological signatures by exploiting the high mobility of edge…
The 2D TI edge states are considered within the Volkov-Pankratov (VP) Hamiltonian. A smooth transition between TI and OI is assumed. The edge states are formed in the total gap of homogeneous 2D material. A pair of these states are of…
We investigated the magnetotransport properties of strained, 80nm thick HgTe layers featuring a high mobility of mu =4x10^5 cm^2/Vs. By means of a top gate the Fermi-energy is tuned from the valence band through the Dirac type surface…
We derive a model of localized edge states in the finite width strip for two-dimensional electron gas formed in the hybrid system of bismuth monolayer deposited on the silicon interface and described by the nearly-free electron model with…
Topological insulators are new states of quantum matter which can not be adiabatically connected to conventional insulators and semiconductors. They are characterized by a full insulating gap in the bulk and gapless edge or surface states…