相关论文: Low Thermal Budget High-k/Metal Surface Gate for B…

Numerical simulations of a complete laser powder bed fusion (LPBF) additive manufacturing (AM) process are extremely challenging or even impossible to achieve without a radical model reduction of the complex physical phenomena occurring…

Atomic probe tomography (APT), based on the work of Erwin Mueller, is able to generate three-dimensional chemical maps in atomic resolution. The required instruments for APT have evolved over the last 20 years from an experimental to an…

To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm regime, which require atomic-scale metrology to identify and…

The use of adiabatic passage techniques to mediate particle transport through real space, rather than phase space is becoming an interesting possibility. We have investigated the properties of Coherent Tunneling Adiabatic Passage (CTAP)…

Although fabrication capabilities of Silicon Dangling Bonds have rapidly advanced from manual labor-driven laboratory work to automated manufacturing in just recent years, sub-nanometer substrate defects still pose a hindrance to production…

We use the tip of an atomic force microscope (AFM) to charge floating metallic gates defined on the surface of a Si/SiGe heterostructure. The AFM tip serves as an ideal and movable cryogenic switch, allowing us to bias a floating gate to a…

An Adaptive Spiral Phase Plate (ASPP) based on liquid crystal (LC) and the transmission electrode technique is theoretically and experimentally demonstrated. This ASPP design enables the generation of high-quality optical vortices with…

Self-heating in next-generation, high-power-density field-effect transistor limits performance and complicates fabrication. Here, we introduce NEP-FET, a machine-learned framework for device-scale heat transport simulations of field-effect…

Site-specific atom probe tomography (APT) from aluminum alloys has been limited by sample preparation issues. Indeed, Ga, which is conventionally used in focused-ion beam (FIB) preparations, has a high affinity for Al grain boundaries and…

It has been a challenge to accurately simulate Li-ion diffusion processes in battery materials at room temperature using {\it ab initio} molecular dynamics (AIMD) due to its high computational cost. This situation has changed drastically in…

There has been an increasing interest in atom probe tomography (APT) to characterise hydrated and biological materials. A major benefit of APT compared to microscopy techniques more commonly used in biology is its combination of outstanding…

Variational Quantum Algorithms (VQA) are promising to demonstrate quantum advantages on near-term devices. Designing ansatz, a variational circuit with parameterized gates, is of paramount importance for VQA as it lays the foundation for…

The deep trapping gate pixel device was described recently as an alternative to CMOS 3T pixel. The feasibilty of this device was studied with technological and transport simulations used in classical electron devices and process design. A…

Single electron transistor (SET) is an advanced tool to exploit in quantum devices. Working of such devices at room-temperature is essential for practical utilization. Dopant based single-electron devices are well studied at low-temperature…

We investigate the performance of gate-defined devices fabricated on high mobility InAs metamorphic heterostructures. We find that heterostructures capped with In$_{0.75}$Ga$_{0.25}$As often show signs of parallel conduction due to…

Doping of Si using the scanning probe hydrogen depassivation lithography technique has been shown to enable placing and positioning small numbers of P atoms with nanometer accuracy. Several groups have now used this capability to build…

Spatial Atomic Layer Deposition (SALD) is a recent approach that is up to two orders of magnitude faster than conventional ALD, and that can be performed at atmospheric pressure and even in the open air. Previous works have exploited these…

The rapid growth of artificial intelligence (AI) has made low-precision formats such as FP16, FP8, and, most recently, block-scaled FP4 the primary focus of modern GPUs, where Tensor Cores now deliver orders-of-magnitude higher throughput…

A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-state related gate lag. Two high-density two-dimensional electron gas (2DEG)…

Chip-scale atomic devices built around micro-fabricated alkali vapor cells are at the forefront of compact metrology and atomic sensors. We demonstrate a micro-fabricated vapor cell that is actively-pumped to ultra-high-vacuum (UHV) to…