相关论文: Carrier diffusion in GaN -- a cathodoluminescence …
Exact assessment of thermal spreading resistance is of great importance to the thermal management of electronic devices, especially when completely considering the heat conduction process from the nanoscale heat source to the macroscopic…
In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied…
We study (In,Ga)(As,Sb)/GaAs quantum dots embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. Quantum dot samples are studied by temperature-dependent photoluminescence, and we observe…
In this work, fundamental results for carrier statistics in graphene 2-dimensional sheets and nanoscale ribbons are derived. Though the behavior of intrinsic carrier densities in 2d graphene sheets is found to differ drastically from…
We performed terahertz magneto-optical spectroscopy of FeSe thin film to elucidate the charge carrier dynamics. The measured diagonal (longitudinal) and off-diagonal (Hall) conductivity spectra are well reproduced by two-carrier Drude…
We have investigated the electronic structure and magnetic properties of GdN as a function of unit cell volume. Based on the first-principles calculations of GdN, we observe that there is a transformation in conduction properties associated…
Feedback from outflows driven by active galactic nuclei (AGN) can affect the distribution and properties of the gaseous halos of galaxies. We study the hydrodynamics and non-thermal emission from the forward outflow shock produced by an…
We present a comprehensive computational study of the electronic, thermal, and thermoelectric (TE) properties of gallium nitride nanowires (NWs) over a wide range of thicknesses (3--9 nm), doping densities ($10^{18}$--$10^{20}$ cm$^{-3}$),…
Utilizing atomistic lattice dynamics and scattering theory, we study thermal transport in nanodevices made of 10 nm thick silicon nanowires, from 10 to 100 nm long, sandwiched between two bulk reservoirs. We find that thermal transport in…
Detailed experimental studies of the conductance of mesoscopic GaAs devices in the few-mode regime reveal a novel thermal effect: for temperatures up to at least 10 K the measured gate characteristics, i.e. conductance $G$ versus gate…
In quantum nanoelectronics, numerical simulations have become an ubiquitous tool. Yet the comparison with experiments is often done at a qualitative level or restricted to a single device with a handful of fitting parameters. In this work,…
We present a systematic study of the temperature dependence of diffusive magnon spin transport, using a non-local device geometry. In our measurements, we detect spin signals arising from electrical and thermal magnon generation, and we…
A comprehensive study of drain current dispersion effects in $\beta$-Ga$_2$O$_3$ FETs has been done using DC, pulsed and RF measurements. Both virtual gate effect in the gate-drain access region and interface traps under the gate are most…
This work explores a nontrivial temperature behavior of the carriers concentration, which governs graphene channel conductance in the nano-structure "graphene channel on ferroelectric substrate" that is a basic element for FETs in…
The diffusion of energy that is locally deposited into two-dimensional electron gases by Joule heating generates transverse voltages across devices with broken symmetry. For mesoscopic structures characterized by device dimensions…
The thermal properties of amorphous materials have attracted significant attention due to their technological importance in electronic devices. Additionally, the disorder-induced breakdown of the phonon gas model makes vibrational transport…
Room temperature, wavelength non-degenerate ultrafast pump/probe measurements were performed on GaN and InGaN epilayers and an InGaN multiple quantum well structure. Carrier relaxation dynamics were investigated as a function of excitation…
We describe results of electronic Raman-scattering experiments in differently doped single crystals of Y-123 and Bi-2212. The comparison of AF insulating and metallic samples suggests that at least the low-energy part of the spectra…
Recent molecular dynamics simulation methods have enabled thermal conductivity of bulk materials to be estimated. In these simulations, periodic boundary conditions are used to extend the system dimensions to the thermodynamic limit. Such a…
Precise control of doping in single nanowires (NWs) is essential for the development of NW-based devices. Here, we investigate a series of MBE-grown GaAs NWs with Be (p-type) and Si (n-type) doping using high-resolution cathodoluminescence…