相关论文: Optical control of the charge state of color cente…
We demonstrate the use of Stimulated Emission Depletion (STED) spectroscopy to map the electron-optical-phonon sideband of the ground state of the radiative transition of color centers in hexagonal boron nitride emitting at 2.0-2.2 eV, with…
Color centers in hexagonal boron nitride (hBN) show stable single photon emission even at room temperature, making these systems a promising candidate for quantum information applications. Besides this remarkable property, also their…
The light emission properties of color centers emitting in 3.3-4 eV region are investigated for hydrostatic pressures ranging up to 5GPa at liquid helium temperature. The light emission energy decreases with pressure less sensitively than…
Two-dimensional hexagonal boron nitride offers intriguing opportunities for advanced studies of light-matter interaction at the nanoscale, specifically for realizations in quantum nanophotonics. Here, we demonstrate the engineering of…
The two-dimensional material hexagonal boron nitride (hBN) hosts luminescent centres with emission energies of 2 eV which exhibit pronounced phonon sidebands. We investigate the microscopic origin of these luminescent centres by combining…
Color centers in hexagonal boron nitride (hBN) have attracted significant interest due to their potential applications in future optical quantum technologies. For most applications, scalable on-demand fabrication is a key requirement.…
Defect color centers in hexagonal boron nitride (hBN) have gained significant interest as single-photon emitters and spin qubits for applications in a wide range of quantum technologies. As the integration of these solid-state quantum…
Near band-gap luminescence (hnu > 5 eV) of hexagonal boron nitride has been studied by means of the time- and energy-resolved photoluminescence spectroscopy method. Two emissions have been observed at 5.5 eV and 5.3 eV. The high-energy…
We have studied the temperature dependencies of the photoluminescence (PL) intensity of 4.1 eV in microcrystalline powder of hexagonal boron nitride in the range of 7-1100 K. The results obtained have been analyzed within the band model of…
Colour centres of hexagonal boron nitride (h-BN) have been discovered as promising and practical single photon sources due to their high brightness and narrow spectral linewidth at room-temperature. In order to realize h-BN based photonic…
Color center is a promising platform for quantum technologies, but their application is hindered by the typically random defect distribution and complex mesoscopic environment. Employing cathodoluminescence, we demonstrate that an…
The experimental identification of optically addressable spin defects in hexagonal boron nitride has opened new possibilities for quantum sensor technologies in two-dimensional materials and structures. Despite numerous fundamental and…
Boron vacancies in hexagonal boron nitride (hBN) are among the most extensively studied optically active spin defects in van der Waals crystals, due to their promising potential to develop two-dimensional (2D) quantum sensors. In this…
Resonant excitation of solid-state quantum emitters enables coherent control of quantum states and generation of coherent single photons, which are required for scalable quantum photonics applications. However, these systems can often decay…
Quantum emitters based on atomic defects in layered hexagonal Boron Nitride (hBN) have emerged as promising solid state 'artificial atoms' with atom-like photophysical and quantum optoelectronic properties. Similar to other atom-like…
Defect centers in hexagonal boron nitride have been extensively studied as room temperature single photon sources. The electronic structure of these defects exhibits strong coupling to phonons, as evidenced by the observation of phonon…
Negatively charged boron vacancies ($\small{V_B^-}$) in hexagonal boron nitride (hBN) have recently gained interest as spin defects for quantum information processing and quantum sensing by a layered material. However, the boron vacancy can…
Photoluminescence of polycrystalline hexagonal boron nitride (hBN) was measured by means of time- and energy-resolved spectroscopy methods. The observed bands are related to DAP transitions, impurities and structural defects. The excitation…
We perform photoluminescence measurements on vacancy-related emitters in hexagonal boron nitride (hBN) that are notorious for their low quantum yields. The gating of these emitters via few-layer graphene electrodes reveals a reproducible,…
Light emitters in wide band gap semiconductors are of great fundamental interest and have potential as optically addressable qubits. Here we describe the discovery of a new color center in high-quality hexagonal boron nitride (h-BN) with a…