相关论文: Defect-Free Axially-Stacked GaAs/GaAsP Nanowire Qu…
We show that fully self-assembled optically-active quantum dots (QDs) embedded in MBE-grown GaAs/AlGaAs core-shell nanowires (NWs) are coupled to the NW mechanical motion. Oscillations of the NW modulate the QD emission energy in a broad…
Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form carrier traps and non-radiative recombination centers. Here,…
Embedding quantum dots (QDs) on nanowire (NW) sidewalls allows the integration of multi-layers of QDs into the active region of radial p-i-n junctions to greatly enhance light emission/absorption. However, the surface curvature makes the…
Quantum dots (QDs) made from semiconductors are among the most promising platforms for the developments of quantum computing and simulation chips, and have advantages over other platforms in high density integration and in compatibility to…
Quantum dots tuned to atomic resonances represent an emerging field of hybrid quantum systems where the advantages of quantum dots and natural atoms can be combined. Embedding quantum dots in nanowires boosts these systems with a set of…
Semiconductor quantum dots (QDs) are being regarded as the primary unit for a wide range of advanced and emerging technologies including electronics, optoelectronics, photovoltaics and biosensing applications as well as the domain of q-bits…
We realize strongly confined quantum dots (QDs) in InAs nanowires (NWs) by combining epitaxial crystal-phase control with chemical wet etching. A strong axial confinement is first introduced by growing closely spaced wurtzite (WZ) tunnel…
Strain-free GaAs/AlGaAs semiconductor quantum dots (QDs) grown by droplet etching and nanohole infilling (DENI) are highly promising candidates for the on-demand generation of indistinguishable and entangled photon sources. The…
Epitaxially-grown semiconductor quantum dots (QDs) provide an attractive platform for the development of deterministic sources of high-quality quantum states of light. Such non-classical light sources are essential for quantum information…
Semiconductor quantum dots (QDs) grown by molecular beam epitaxy are excellent quantum emitters, but their random spatial distribution hinders deterministic coupling to optical microcavities. We demonstrate a room-temperature atomic force…
Quantum-dot-in-nanowire systems constitute building blocks for advanced photonics and sensing applications. The electronic symmetry of the emitters impacts their function capabilities. Here, we study the fine structure of gallium-rich…
Quantum dot light-emitting diodes (QLEDs) are promising building blocks for prospective lighting and display applications. Despite the significant advancements achieved towards increasing the efficiency and brightness levels of QLEDs, the…
The layer stacking morphology in nanocarbons is paramount for achieving new properties and outperforming applications. Here, we demonstrate that graphene quantum dots (GQDs) retain crystallinity and a stacking structure from CVD graphene…
GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly-confined 0D and…
Despite the superiority in quantum properties, self-assembled semiconductor quantum dots face challenges in terms of scalable device integration because of their random growth positions, originating from the Stranski-Krastanov growth mode.…
This work presents an analysis of the electronic and optical properties of InAs/GaAs columnar quantum dots (QDs) by performing multi-million-atom tight-binding simulations. The plots of the polarisation-dependent ground state optical…
Self-assembled InAs quantum dots (QDs) are promising optomechanical elements due to their excellent photonic properties and sensitivity to local strain fields. Microwave-frequency modulation of photons scattered from these efficient quantum…
The nanowire-supported quantum dot (NWQD) of GaN is an unconventional nanostructure, which is extremely promising for realization of UV photonics in general, and room-temperature single photon generation, in particular. While GaN-NWQDs have…
In the context of fast developing quantum technologies, locating single quantum objects embedded in solid or fluid environment while keeping their properties unchanged is a crucial requirement as well as a challenge. Such "quantum…
InGaAs Quantum Dots embedded in GaAs barriers, grown in inverted tetrahedral recesses of 7 {\mu}m edge, have showed interesting characteristics in terms of uniformity and spectral narrowness of the emission. In this paper we present a study…