相关论文: Transferrable AlGaN/GaN HEMTs to Arbitrary Substra…
This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID ). Relying on these figures, insights into GaN HEMT modeling in relation…
High carrier mobilities play a fundamental role for high-frequency electronics, integrated optoelectronics as well as for sensor and spintronic applications, where device performance is directly linked to the magnitude of the carrier…
Transition metal nitrides have received significant interest for use within plasmonic and optoelectronic devices. However, deposition temperature remains a significant barrier to the integration of transition metal nitrides as plasmonic…
Understanding the energy transport by charge carriers and phonons in two-dimensional (2D) van der Waals heterostructures is essential for the development of future energy-efficient 2D nanoelectronics. Here, we performed in situ spatially…
we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have…
Prevalence of electronic gadgets has been on the rise and among several considerations that are important for furthering frontiers of utility of new gadgets is mechanical flexibility of electronic systems. Flexible electronics require…
Ultrafast electron thermalization - the process leading to Auger recombination, carrier multiplication via impact ionization and hot carrier luminescence - occurs when optically excited electrons in a material undergo rapid…
Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirement of elevated growth temperature accompanied with high…
Graphene nanosheets (GNS) paper is widely regarded as a promising candidate for heat dissipation due to its outstanding thermal conductivity. However, the accompanied high electrical conductivity makes it unfavorable for thermal management…
The junctions formed between gate contact and III-nitride are crucial components of GaN-based electronics and optoelectronics. In this work, solution-processed inorganic Ti3C2Tx MXene films were spray coated on the AlGaN/GaN epitaxial wafer…
Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and…
Miniaturization of electronic components has led to overheating, increasing power consumption and causing early circuit failures. Conventional heat dissipation methods are becoming inadequate due to limited surface area and higher…
We present a two-dimensional electron heterostructure field effect device of simplistic design and ease of fabrication that displays high mobility electron transport. This is accomplished using a high efficacy contacting scheme and simple…
The needs for efficient heat removal and superior thermal conduction in nano/micro devices have triggered tremendous studies in low-dimensional materials with high thermal conductivity. Hexagonal boron nitride (h-BN) is believed to be one…
The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables a large…
We report on the design, fabrication, and characterization of all MOCVD-grown long-gate AlScN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on semi-insulating GaN substrates. Devices with a gate length of…
AlN-GaN heterostructures are central to high-power and high-frequency electronics, including RF devices, power converters, and AI accelerators. An intermediate Al1-xGaxN (AlGaN) layer is often present, either unintentionally during growth…
Two-dimensional (2D) structures of boron atoms so called borophene, have recently attracted remarkable attention. In a latest exciting experimental study, a hydrogenated borophene structure was realized. Motivated by this success, we…
Atomically thin boron nitride (BN) nanosheets are important two-dimensional nanomaterials with many unique properties distinct from those of graphene, but the investigation of their mechanical properties still greatly lacks. Here we report…
We report on the design and demonstration of ultra-wide bandgap AlGaN polarization-graded field effect transistors with ultra-thin channels to enable excellent current density and high-frequency performance while significantly reducing…