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相关论文: Transferrable AlGaN/GaN HEMTs to Arbitrary Substra…

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Carrier mobility is a crucial character for electronic devices since it domains power dissipation and switching speed. Materials with certain high carrier mobility, equally, unveil rich unusual physical phenomena elusive in their…

材料科学 · 物理学 2017-04-10 Jiafeng Xie , Z. Y. Zhang , D. Z. Yang , M. S. Si , D. S. Xue , Xiaohui Deng

Radiative thermal engineering with subwavelength metallic bodies is a key element for heat and energy management applications, communication and sensing. Here, we numerically and experimentally demonstrate metallic thermal emitters with…

光学 · 物理学 2022-09-02 David Navajas , José Manuel Pérez-Escudero , Iñigo Liberal

In this letter, we report the operation of AlGaN/GaN HEMTs with Pd gates in air over a wide temperature range from 22$^\circ$C to 500$^\circ$C. The variation in the threshold voltage ($V_{th}$) is less than 1$\%$ over the entire temperature…

Graphene is a promising candidate for future electronic applications. Manufacturing graphene-based electronic devices typically requires graphene transfer from its growth substrate to another desired substrate. This key step for device…

Near-field radiative heat transfer (NFRHT) is strongly related with many applications such as near-field imaging, thermos-photovoltaics and thermal circuit devices. The active control of NFRHT is of great interest since it provides a degree…

介观与纳米尺度物理 · 物理学 2019-07-17 Lixin Ge , Ke Gong , Yuping Cang , Yongsong Luo , Xi Shi , Ying Wu

Atomically thin boron nitride (BN) is an important two-dimensional (2D) nanomaterial, with many properties distinct from graphene. In this feature article, these unique properties and associated applications often not possible from graphene…

材料科学 · 物理学 2016-05-05 Lu Hua Li , Ying Chen

Al-doped ZnO thin films were deposited using reactive high power impulse magnetron sputtering at substrate temperatures between room temperature and 600 $\bullet$ C. Two sample series with different oxygen partial pressures were studied.…

材料科学 · 物理学 2025-03-03 Martin Mickan , Ulf Helmersson , David Horwat

Altermagnets are a newly identified class of materials that combine advantageous characteristics of both ferro- and antiferromagnets, making them highly promising for spintronic applications. Hematite has recently been identified as an…

High voltage (~2 kV) AlGaN-channel HEMTs were fabricated with 64% Aluminum composition in the channel. The average on-resistance was ~75 ohm. mm (~21 miliohm. cm^2) for LGD = 20 microns. Breakdown voltage reached >3 kV (tool limit) before…

Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and other materials are core to emerging optical and electronic devices. Their direct fabrication is, however, challenged as the vdW forces are weak and cannot be tuned to…

We study the radiative heat transfer between multilayer structures made by a periodic repetition of a graphene sheet and a hexagonal boron nitride (hBN) slab. Surface plasmons in a monolayer graphene can couple with a hyperbolic phonon…

光学 · 物理学 2017-07-05 Bo Zhao , Brahim Guizal , Zhuomin M. Zhang , Shanhui Fan , Mauro Antezza

Atomically thin van der Waals materials provide a highly tunable platform for exploring emergent quantum phenomena in solid state systems. Due to their remarkable mechanical strength, one enticing tuning knob is strain. However, the weak…

Field-effect transistors (FETs) predominantly utilize electrons for signal processing in modern electronics. In contrast, phonon-based field-effect transistors (PFETs)-which employ phonons for active thermal management-remain markedly…

计算物理 · 物理学 2025-08-05 H. F. Feng , Z. Y. Xu , B. Liu , Zhi-Xin Guo

Graphene (G) is a two-dimensional material with exceptional sensing properties. In general, graphene gas sensors are produced in field effect transistor configuration on several substrates. The role of the substrates on the sensor…

介观与纳米尺度物理 · 物理学 2018-03-29 A. R. Cadore , E. Mania , A. B. Alencar , N. P. Rezende , S. de Oliveira , K. Watanabe , T. Taniguchi , H. Chacham , L. C. Campos , R. G. Lacerda

Dielectrics are insulating materials used in many different electronic devices and play an important role in all of them. Current advanced electronic devices use dielectric materials with a high dielectric constant and avoid high leakage…

应用物理 · 物理学 2019-05-17 Fei Hui

Hexagonal boron nitride (h-BN) is a critical material for 2D electronic devices for graphene and has attracted a considerable amount of attention owing to its structural similarity and semiconducting property. However, modifying its…

应用物理 · 物理学 2019-11-12 Jerome A. Cuenca , Soumen Mandal , Malcolm Snowball , Adrian Porch , Oliver A. Williams

We study the interfacial thermal conductance of grain boundaries (GBs) between monolayer graphene and hexagonal boron nitride (h-BN) sheets using a combined atomistic approach. First, realistic samples containing graphene/h-BN GBs with…

材料科学 · 物理学 2022-01-03 Haikuan Dong , Petri Hirvonen , Zheyong Fan , Ping Qian , Yanjing Su , Tapio Ala-Nissila

Van der Waals (vdW) assembly of two-dimensional materials has been long recognized as a powerful tool to create unique systems with properties that cannot be found in natural compounds. However, among the variety of vdW heterostructures and…

The exploration of the superconductivity in two-dimensional materials has garnered significant attention due to their promising low-power applications and fundamental scientific interest. Here, we report some novel stable non-van der Waals…

超导电性 · 物理学 2025-05-22 Si-Yi Xiong , Peng Jiang , Yiming Wang , Yan-Ling Li

Control over the position, orientation, and stacking order of two-dimensional (2D) materials within van der Waals heterostructures is crucial for applications in electronics, spintronics, optics, and sensing. The most popular strategy for…

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