相关论文: Transferrable AlGaN/GaN HEMTs to Arbitrary Substra…
The successful assembly of heterostructures consisting of several layers of different 2D materials in arbitrary order by exploiting van der Waals forces has truly been a game changer in the field of low dimensional physics. For instance,…
Optical heating of plasmonic nanostructures is a critical challenge in nanoscale systems. Although plasmonic effects enable enhanced optical functionalities, the associated temperature rise can degrade performance in heat-sensitive…
In this paper, we propose van del Waals heterostructure-based thermionic devices for the applications in cooling and power generation in the temperature range of 300 to 400 K. By using two-dimensional materials of low cross-plane thermal…
AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long…
In the rapidly evolving field of quantum computing, niobium nitride (NbN) superconductors have emerged as integral components due to their unique structural properties, including a high superconducting transition temperature (Tc),…
Near-field radiative heat transfer (NFHT) research currently suffers from an imbalance between numerous theoretical studies, as opposed to experimental reports that remain, in proportion, relatively scarce. Existing experimental platforms…
Lightweight 2D materials due to its large surface area are being studied for its hydrogen storage applications. The characteristics of hydrogen adsorption on the electric field-induced h-BN bilayer were investigated. The overall storage…
Combining both vertical and in-plane two-dimensional (2D) heterostructures opens up the possibility to create an unprecedented architecture using 2D atomic layer building blocks. The thermal transport properties of such mixed…
With the technology of artificial defects creating, we can tune the band structure and transport properties of many two-dimensional (2D) layered materials. One prototype materials system is the antidoted graphene sheet, where periodical…
Gallium nitride (GaN) is a typical wide-bandgap semiconductor with a critical role in a wide range of electronic applications. Ballistic thermal transport at nanoscale hotspots will greatly reduce the performance of a device when its…
Transition metal dichalcogenides (TMD) monolayers, holding potential as good sunlight absorbers, are promising materials for next-generation optoelectronic devices. They may enable ultrathin photovoltaic(PV) devices thanks to their…
We report on the demonstration of a deep sub-micron normally-off AlGaN/GaN HEMT with high on-current and high threshold voltage (VTH). The high-performance device was realized by utilizing a gate recess with length and depth of 200 nm and…
Van der Waals encapsulation of two-dimensional materials within hexagonal boron nitride (h-BN) stacks has proven to be a promising way to create ultrahigh-performance electronic devices. However, contemporary approaches for achieving van…
Raman enhancement techniques are essential for fundamental studies in light-matter interactions and find widespread application in microelectronics, bio-chemical sensing, and clinical diagnosis. Two-dimensional (2D) materials and their van…
We reported on the observation of extremely high-density ($>10^{14}$cm$^{-2}$) 2D electron gas in N-polar AlGaN/GaN heterostructures grown on sapphire substrates. Due to introducing the GaN/AlN superlattice (SL) back barrier between the GaN…
This study presents a comprehensive investigation into the exceptional superconducting attributes of titanium nitride (TiN) achieved through plasma-enhanced atomic layer deposition (PEALD) on both planar and intricate three-dimensional (3D)…
Oxynitrides are used in a variety of applications including photocatalysts, high-k dielectrics or wear-resistant coatings and often show intriguing multi-functionality. To accelerate the co-optimization of the relevant material properties…
The discovery of superconductivity at 39 K in magnesium diboride offers the possibility of a new class of low-cost, high-performance superconducting materials for magnets and electronic applications. With twice the critical temperature of…
Heat dissipation is a very critical problem for designing nano-functional devices, including MoS2/Graphene heterojunctions. In this paper we investigate thermal transport in MoS2/Graphene hybrid nanosheets under various heating conditions,…
Due to the piezoelectric nature of GaN, the 2DEG in AlGaN/GaN HEMT could be engineered by strain. In this work, SiNx deposited using dual-frequency PECVD was used as a stressor. The output performance of the devices was dominated by the…