相关论文: Transferrable AlGaN/GaN HEMTs to Arbitrary Substra…

Fueled by the 5G revolution, the demand for advanced radio frequency micro-electromechanical systems (MEMS) based on AlScN is growing rapidly. However, synthesizing high-quality, textured AlScN thin films is challenging. Current approaches…

Recently, many works have experimentally demonstrated near-field radiative heat transfer (NFRHT) exceeding the far-field blackbody limit between planar surfaces. Due to the difficulties associated with maintaining the nanosize gaps required…

While vertical GaN-on-silicon architectures promise a transformative leap in cost-effective power electronics and high-resolution micro-LEDs, their deployment remains bottlenecked by the high electrical resistance of conventional epitaxial…

This paper introduces a robust Pareto design approach for transistor sizing of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), particularly for power amplifier (PA) and low-noise amplifier (LNA) designs in 5G applications.…

Gallium oxide (Ga$_2$O$_3$) has attracted significant interest for its unique potential especially in power electronics. However, its low and anisotropic thermal conductivity poses a major challenge for heat dissipation. Here, we explore an…

To stabilize the working temperature of an equipment, a solid-state thermal resistor is usually a requisite, which could adjust its heat conductance continuously according to the temperature. In this work, the thermal conductivity and the…

Hexagonal boron nitride (h-BN) is a two dimensional (2D) layered insulator with superior dielectric performance that offers excellent interaction with other 2D materials (e.g. graphene, MoS2). Large-area h-BN can be readily grown on…

The integration of ferroelectric nitride thin films such as Al1-xScxN onto GaN templates could enable enhanced functionality in novel high-power transistors and memory devices. This requires a detailed understanding of the ferroelectric…

The substrate material of monolayer graphene influences the charge carrier mobility by various mechanisms. At room temperature, the scattering of conduction electrons by phonon modes localized at the substrate surface can severely limit the…

We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility…

A comprehensive rational thermal material design paradigm requires the ability to reduce and enhance the thermal conductivities of nanomaterials. In contrast to the existing ability to reduce the thermal conductivity, methods that allow to…

With the continuous advancement of nanotechnology, nanodevices have become crucial components in computing, sensing and energy conversion applications. However, the structures of nanodevices typically possess sub-wavelength dimensions and…

A broad TCAD simulation analysis of a monolithic common drain bidirectional GaN HEMT was performed. We used gate-to-gate distances of 4 microns and 6 microns for the devices optimized with two field plates. The breakdown voltages were 675V…

In view of their immensely intriguing properties, two dimensional materials are being intensely researched in search of novel phenomena and diverse application interests, however, studies on the realization of nanocomposites in the…

We report a deterministic 2D material (2DM) transfer method to assemble any-stacking-order heterostructures incorporating suspended ultra-thin 2D materials, such as single-layer graphene (SLG) and bilayer graphene (BLG). The transfer…

We report on the fabrication and characterization of field effect transistors (FETs) based on chemical vapor deposited (CVD) graphene encapsulated between few layer CVD boron nitride (BN) sheets with complementary metal oxide semiconductor…

We present a novel flipping transfer method for van der Waals heterostructures, offering a significant advancement over previous techniques by eliminating the need for polymers and solvents. Here, we utilize commercially available gel film…

An optical phonon limited velocity model has been employed to investigate high-field transport in a selection of layered 2D materials for both, low-power logic switches with scaled supply voltages, and high-power, high-frequency…

High mobility two-dimensional electron gases (2DEGs) underpin today's silicon based devices and are of fundamental importance for the emerging field of oxide electronics. Such 2DEGs are usually created by engineering band offsets and charge…

Van der Waals heterostructures are at the forefront in materials heterostructure engineering, offering the ultimate control in layer selectivity and capability to combine virtually any material. Hexagonal boron nitride (hBN), the most…