相关论文: Quantized Auger Recombination of Polaronic Self-tr…
In quantum dots (QDs) the Auger recombination is a non-radiative process, where the electron-hole recombination energy is transferred to an additional carrier. It has been studied mostly in colloidal QDs, where the Auger recombination time…
Auger recombination in semiconductors is a many-body phenomenon in which recombination of electrons and holes is accompanied by excitation of other charge carriers. Being nonradiative, it is detrimental to light emission. The excess energy…
In semiconductor nanostructures nonradiative Auger recombination is enhanced by the presence of boundaries which relax the momentum conservation and thereby removes the threshold reduction for these processes. We propose a method to…
Auger recombination is a non-radiative process, where the recombination energy of an electron-hole pair is transferred to a third charge carrier. It is a common effect in colloidal quantum dots that quenches the radiative emission with an…
Auger recombination is an important non-radiative carrier recombination mechanism in many classes of optoelectronic devices. The microscopic Auger processes can be either direct or indirect, mediated by an additional scattering mechanism…
The quantum efficiency of AlGaN ultraviolet light-emitting diodes (LEDs) declines (droops) at increasing operating powers due to Auger-Meitner recombination (AMR). Using first-principles density-functional theory, we show that indirect AMR…
Spectroscopic studies of semiconductor quantum dots (SQDs) addressing the problem of non-radiative carrier losses is vital for the improvement in the efficiency of various light-emitting devices. Various designs of SQDs emitter like doping,…
The surface effect and quantum confinement render nanomaterials the optoelectronic properties more susceptible to nonradiative processes than their bulk counterparts. These nonradiative processes usually contain a series of interwoven and…
Auger processes play a critical role in the behavior of colloidal quantum dots (QDs). While nonradiative Auger recombination is a key performance-limiting factor in light-emitting applications, Auger effects also present exciting…
The principal mechanisms of Auger recombination of nonequilibrium carriers in semiconductor heterostructures with quantum wells are investigated. It is shown for the first time that there exist three fundamentally different Auger…
The rate at which excited charge carriers relax to their equilibrium state affects many aspects of the performance of nanoscale devices, including switching speed, carrier mobility and luminescent efficiency. Better understanding of the…
We propose a novel phonon assisted Auger process unique to the electronic band structure of monolayer transition metal dichalcogenides (TMDCs), which dominates the radiative recombination of ground state excitons in Tungsten based TMDCs.…
The intriguing physics of carrier-carrier interactions, which likewise affect the operation of light emitting devices, stimulate the research on semiconductor structures at high densities of excited carriers, a limit reachable at large…
A growing interest in colloidal quantum dot (QD) based light-emitting diodes (QD-LEDs) has been motivated by the exceptional color purity and spectral tunability of QD emission as well as the amenability of QD materials to highly scalable…
In this letter, we present non-degenerate ultrafast optical pump-probe studies of the carrier recombination dynamics in MoS$_{2}$ monolayers. By tuning the probe to wavelengths much longer than the exciton line, we make the probe…
For Si and Ge nanocrystals (NCs) embedded in wide band-gap matrices, Auger recombination (AR) and carrier multiplication (CM) lifetimes are computed exactly in a three-dimensional real space grid using empirical pseudopotential wave…
We examine the effect of carrier localization due to random alloy fluctuations on the radiative and Auger recombination rates in InGaN quantum wells as a function of alloy composition, crystal orientation, carrier density, and temperature.…
In quantum dots (QDs) the Auger recombination is a non-radiative scattering process in which the optical transition energy of a charged exciton (trion) is transferred to an additional electron leaving the dot. Electron tunneling from a…
In a semiconductor heterostructure with type II energy band alignment, the spatial separation between electrons and holes slows down their radiative recombination. With increasing excitation intensity, Auger recombination quickly becomes…
Recent photoluminescence experiments presented by M. Binder et al. [Appl. Phys. Lett. 103, 071108 (2013)] demonstrated the visualization of high-energy carriers generated by Auger recombination in (AlInGa)N multi quantum wells. Two…