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相关论文: Zinc-Blende group III-V/group IV epitaxy: importan…

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Silicon vacancy (VSi) centers in 4H silicon carbide have emerged as a highly promising platform for semiconductor-based quantum technologies, combining excellent spin and optical properties with an industrial-grade, CMOS-compatible…

The development of epitaxy techniques for localized growth of crystalline silicon nanofilms and nanostructures has been crucial to recent advances in electronics and photonics. A precise definition of the crystal growth location, however,…

材料科学 · 物理学 2021-09-22 Thomas Reichenbach , Gianpietro Moras , Lars Pastewka , Michael Moseler

We discuss the triple-$\vec{q}^X$ structures for the ordered cubic phase of NpO$_2$, which are $Pn{\bar 3}m$ and $Pa{\bar 3}$. A special care should be taken to discriminate between these two cases. We analyze the relevant structure-factor…

强关联电子 · 物理学 2007-05-23 A. V. Nikolaev , K. H. Michel

Epitaxial self-assembled quantum dots (SAQDs) represent an important step in the advancement of semiconductor fabrication at the nanoscale that will allow breakthroughs in electronics and optoelectronics. In these applications, order is a…

材料科学 · 物理学 2007-06-11 Lawrence H. Friedman

It is well known that the crystalline structure of the III-V nanowires (NWs) is mainly controlled by the wetting contact angle of the catalyst droplet which can be tuned by the III and V flux. In this work we present a method to control the…

材料科学 · 物理学 2019-12-16 T. Dursap , M. Vettori , A. Danescu , C. Botella , P. Regreny , G. Patriarche , M. Gendry , J. Penuelas

Using in-situ synchrotron tomography, we investigate the coarsening dynamics of barium borosilicate melts during phase separation. The 3-D geometry of the two interconnected phases is determined thanks to image processing. We observe a…

We report on structural and optical properties of InGaN/GaN thin films, with a 0.46o misalignment between the surface and the (0001) plane, which were grown by metal-organic chemical vapor deposition (MOCVD) on 0.34o miscut sapphire…

材料科学 · 物理学 2019-02-19 I. A. Ajia , S. M. C. Miranda , N. Franco , E. Alves , K. Lorenz , K. P. O'Donnell , I. S. Roqan

The planar front of a growing a crystal is often destroyed by instabilities. In the case of growth from a condensed phase, the most frequent ones are diffusion instabilities, which will be but briefly discussed in simple terms in chapter…

材料科学 · 物理学 2007-05-23 Paolo Politi , Genevieve Grenet , Alain Marty , Anne Ponchet , Jacques Villain

Mesoscopic point contacts between elemental metals and the topological 3D Dirac semimetal Cd$_3$As$_2$ have been recently shown to be superconducting with unconventional pairing while Cd$_3$As$_2$ itself does not superconduct. Here we show…

A phase slip is a localized disturbance in the coherence of a superconductor allowing an abrupt 2$\pi$ phase shift. Phase slips are a ubiquitous feature of one-dimensional superconductors and also have an analogue in two-dimensions. Here we…

Solid-melt interfaces play a pivotal role in governing crystal growth and metal-mediated epitaxy of gallium nitride (GaN) and other semiconductor materials. Using atomistic simulations based on machine-learning interatomic potentials…

We demonstrate how first-principles calculations using density-functional theory (DFT) can be applied to gain insight into the molecular processes that rule the physics of materials processing. Specifically, we study the molecular beam…

材料科学 · 物理学 2009-11-07 P. Kratzer , E. Penev , M. Scheffler

We report a detailed study of the microstructure and defects in sintered polycrystalline MgB2. Both TEM and x-ray data reveal that MgO is the major second-phase in our bulk samples. Although MgB2 and MgO have different crystal symmetries,…

超导电性 · 物理学 2009-11-07 Y. Zhu , L. Wu , V. Volkov , Q. Li , G. Gu , A. R. Moodenbaugh , M. Malac , M. Suenaga , J. Tranquada

Semicoherent precipitates govern strength, stability and transformation pathways in structural alloys, yet the kinetic defect process underlying their three-dimensional growth has remained unresolved. Here we show that lath growth is driven…

材料科学 · 物理学 2026-04-17 Jin-Yu Zhang , Juan Du , Lin Yang , Frédéric Mompiou , Shigenobu Ogata , Wen-Zheng Zhang

We present a theoretical analysis of electronic structure evolution in the group-IV alloy Ge$_{1-x}$Pb$_{x}$ based on density functional theory. For ordered alloy supercells we demonstrate the emergence of a singlet conduction band (CB)…

材料科学 · 物理学 2019-11-14 Christopher A. Broderick , Edmond J. O'Halloran , Eoin P. O'Reilly

We investigate theoretically the interplay between the effects of a perpendicular electric field and incommensurability at the interface on the electronic properties of a heterostructure of bilayer graphene and a semiconducting substrate…

介观与纳米尺度物理 · 物理学 2016-11-02 D. J. Leech , M. Mucha-Kruczyński

The critical current of a thin superconducting strip of width $W$ much larger than the Ginzburg-Landau coherence length $\xi$ but much smaller than the Pearl length $\Lambda = 2 \lambda^2/d$ is maximized when the strip is straight with…

超导电性 · 物理学 2015-06-03 John R. Clem , Yasunori Mawatari , G. R. Berdiyorov , F. M. Peeters

We present results from an extensive set of simulations of gravitational fragmentation in the presence of magnetic fields and ambipolar diffusion. The average fragmentation spacing in the nonlinear phase of evolution is in excellent…

天体物理学 · 物理学 2008-12-18 Shantanu Basu , Glenn E. Ciolek , James Wurster

In order to address the growth of crystals in veins, a multiphase-field model is used to capture the dynamics of crystals precipitating from a super-saturated solution. To gain a detailed understanding of the polycrystal growth phenomena in…

地球物理 · 物理学 2013-10-21 Kumar Ankit , Britta Nestler , Michael Selzer , Mathias Reichardt

The current-voltage characteristics (IVC) of $S-c-N$ point contacts of superconductors with a small coherence length ${{\xi}_{0}}$ reveal steps with discrete values of the differential resistance. This peculiarity is associated with a…