相关论文: Zinc-Blende group III-V/group IV epitaxy: importan…
A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth temperature (Tg) between 700 and 590 {\deg}C, respectively. We…
Segregation of group-III elements during the molecular-beam epitaxy growth of III-V compounds leads to a non-abrupt interface. The composition asymmetry in the structures such as quantum wells, quantum dots, and superlattices, in turn,…
Terrace-sized, single-orientation graphene can be grown on top of a carbon buffer layer on silicon carbide by thermal decomposition. Despite its homogeneous appearance, a surprisingly large variation in electron transport properties is…
The interface between hexagonal ZnO films and cubic MgO (001) substrates, fabricated through molecular beam epitaxy, are thoroughly investigated. X-ray diffraction and (scanning) transmission electron microscopy reveal that, at the…
A combined study of transport, thermodynamic, neutron diffraction, nuclear magnetic resonance measurements and first principles calculation were performed for $\beta$-V$_2$PO$_5$ single crystal. It was shown to be a semiconductor with a…
Global fits to moments of kinematic distributions measured in inclusive semileptonic $B\rightarrow X_c l \nu_l$ enable the determination of the Cabibbo-Kobayashi-Maskawa matrix element $|V_{cb}|$ together with non-perturbative matrix…
We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from 1 um width up to large areas of 1 by 1 mm2. The growth with…
The magnetic field (H) - temperature (T) phase diagram of a superconductor is significantly altered when domains are present in an underlying ferromagnet with perpendicular magnetic anisotropy. When the domains have a band-like shape, the…
X-ray nanodiffraction is applied to study the formation and correlation of domain boundaries in mesocrystalline superlattices of PbS nanocrystals with face-centered cubic structure. Each domain of the superlattice can be described with one…
Presently, the piezoelectric materials are finding tremendous applications in the micro-mechanical actuators, sensors and self-powered devices. In this context, the studies pertaining to piezoelectric properties of materials in the…
Grazing incidence anomalous x-ray scattering was used to monitor in situ the molecular beam epitaxy growth of GaN/AlN quantum dots (QDs). The strain state was studied by means of grazing incidence Multi-wavelength Anomalous Di raction (MAD)…
We investigate the nucleation of superconductivity in a uniform perpendicular magnetic field H in aluminum microsquares containing a few (2 and 4) submicron holes (antidots). The normal/superconducting phase boundary T_c(H) of these…
Germanium is reemerging as a prominent material in the semiconductor field, particularly for electronic applications, photonics, photovoltaics and thermophotovoltaics. Its combination with III-V compound semiconductors through epitaxial…
The band gap engineering of group IV semiconductors has not been well explored theoretically and experimentally, except for SiGe. Recently, GeSn has attracted much attention due to the possibility of obtaining a direct band gap in this…
By modeling the stripe phase in cuprates as spin gapped stripes coupled to the RVB liquid of preformed electron pairs, I derive the low energy effective theory of the RVB phase variable. It is found that the effect of stripe dynamics…
Ferroelectric domain switching in c-axis-oriented epitaxial Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ thin films was studied using biased scanning probe microscopy tips. While linear and logarithmic dependence of domain size on tip bias and writing…
Spin-triplet chiral p-wave superconductivity is typically described by a two-component order parameter, and as such is prone to unique emergent effects when compared to the standard single-component superconductors. Here we present the…
We study the sub-gap conductance of a ferromagnetic mesoscopic region attached to a ferromagnetic and a superconducting electrode by means of tunnel junctions. In the absence of the exchange field, the ratio $r= \gamma / \epsilon_T$ of the…
We investigate the upper critical field in a stripe--phase and in the presence of a phenomenological pseudogap. Our results indicate that the formation of stripes affects the Landau orbits and results in an enhancement of $H_{c2}$. On the…
Most III-V semiconductors, which acquire the zinc-blende phase as bulk materials, adopt the metastable wurtzite phase when grown in the form of nanowires. These are new semiconductors with new optical properties, in particular, a different…