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Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional semiconductors (2DS) offer ultimate thickness scaling, good performance has largely been achieved…

Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of…

材料科学 · 物理学 2010-02-11 Fengnian Xia , Damon B. Farmer , Yu-ming Lin , Phaedon Avouris

Electronics are integral to modern life; however, at their end-of-life these devices produce environmentally hazardous electronic waste (e-waste). Recycling the ubiquitous printed circuit boards (PCBs) that make up a substantial mass and…

A novel, highly flexible, conductive polymer-based fiber with high electric capacitance is reported. In its crossection the fiber features a periodic sequence of hundreds of conductive and isolating plastic layers positioned around metallic…

化学物理 · 物理学 2015-05-19 Jian Feng Gu , Stephan Gorgutsa , Maksim Skorobogatiy

Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene {field-effect} transistors (GFETs) with enhanced RF performance…

应用物理 · 物理学 2019-11-18 A. Toral-Lopez , E. G. Marin , F. Pasadas , J. M. Gonzalez-Medina , F. G. Ruiz , D. Jiménez , A. Godoy

Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…

Recently the strong demands in wireless communication requires expanding development for the application of RF MEMS (Radio Frequency micro electro mechanical systems) sensing devices such as micro-switches, tunable capacitors because it…

其他计算机科学 · 计算机科学 2007-11-29 M. -K. El Khatib , A. Pothier , P. Blondy

The subwavelength mode volumes of plasmonic filters are well matched to the small size of state-of-the-art active pixels (~ 1 {\mu}m) in CMOS image sensor arrays used in portable electronic devices. Typical plasmonic filters exhibit broad…

光学 · 物理学 2017-11-22 Dagny Fleischman , Luke Sweatlock , Hirotaka Murakami , Harry Atwater

We measured the magnetic resonance of rubidium atoms passing through periodic magnetic fields generated by two types of multilayered transmission magnetic grating. One of the gratings reported here was assembled by stacking four layers of…

原子物理 · 物理学 2017-05-24 Y. Nagata , S. Kurokawa , A. Hatakeyama

In this work, we present an Opto-Electro-Mechanical Modulator (OEMM) for RF-to-optical transduction realized via an ultra-coherent nanomembrane resonator capacitively coupled to an rf injection circuit made of a microfabricated read-out…

Several shielding applications, to protect human health and electronic devices against dangerous effects of electromagnetic radiation, require solutions that fabrics can suitably fulfill. Here, we will investigate the electromagnetic…

材料科学 · 物理学 2007-06-28 J. Avloni , L. Florio , A. R. Henn , R. Lau , M. Ouyang , A. Sparavigna

We report the study of magnetotransport properties of regio-regular poly (3-hexyl thiophene) based organic diodes. The devices were fabricated using two different techniques of spin coating and inkjet printing. Positive magnetoresistance…

材料科学 · 物理学 2009-07-26 Sayani Majumdar , Himadri S. Majumdar , Daniel Tobjork , Ronald Osterbacka

Using interplay between surface plasmons and metamaterials, we propose a new technique for novel metamaterial designs. We show that surface plasmons existing on thin metal surfaces can be used to "drive" non-resonant structures in their…

光学 · 物理学 2011-04-12 Durdu O. Guney , Thomas Koschny , Costas M. Soukoulis

At the LaAlO$_3$-SrTiO$_3$ interface, electronic phase transitions can be triggered by modulation of the charge carrier density, making this system an excellent prospect for the realization of versatile electronic devices. Here, we report…

介观与纳米尺度物理 · 物理学 2019-09-30 A. E. M. Smink , B. Prabowo , B. Stadhouder , N. Gauquelin , J. Schmitz , H. Hilgenkamp , W. G. van der Wiel

A field-effect transistor (FET) amplifier for small voltage signals is presented. Its design is elementary and the construction can be afforded by anyone. Despite its simplicity, with a voltage noise less than 1 nV/sqrt(Hz), it outperforms…

仪器与探测器 · 物理学 2008-11-19 Luca Callegaro , Marco Pisani , Alessio Pollarolo

Local field potentials (LFPs) are routinely measured experimentally in brain tissue, and exhibit strong low-pass frequency filtering properties, with high frequencies (such as action potentials) being visible only at very short distances…

生物物理 · 物理学 2016-08-16 C. Bédard , H. Kröger , A. Destexhe

A frequency-diverse computational imaging system synthesized using three-dimensional (3D) printed frequency-diverse metasurface antennas is demonstrated. The 3D fabrication of the antennas is achieved using a combination of PolyLactic Acid…

Molecular electronics originally proposed that small molecules sandwiched between electrodes would accomplish electronic functions and enable to reach ultimate scaling. However, so far, functional molecular devices have been only…

介观与纳米尺度物理 · 物理学 2016-10-10 Jorge Trasobares , Dominiqe Vuillaume , Didier Théron , Nicolas Clement

The field-effect mobility in an organic thin-film transistor is studied theoretically. From a percolation model of hopping between localized states and a transistor model an analytic expression for the field-effect mobility is obtained. The…

凝聚态物理 · 物理学 2009-10-31 M. C. J. M. Vissenberg , M. Matters

A graphene field-effect-transistor (GFET) model calibrated with extracted device parameters and a commercial 65 nm silicon MOSFET model are compared with respect to their radio frequency behavior. GFETs slightly lag behind CMOS in terms of…

介观与纳米尺度物理 · 物理学 2012-09-05 Saul Rodriguez , Sam Vaziri , Mikael Ostling , Ana Rusu , Eduard Alarcon , Max C. Lemme