相关论文: Interaction-induced crossover between weak anti-lo…
We employ a magnetocapacitance technique to study the spectrum of the soft two-subband (or double-layer) electron system in a parabolic quantum well with a narrow tunnel barrier in the centre. In this system unbalanced by gate depletion, at…
We report an experimental study of quantum conductivity corrections for two-dimensional electron gas in a GaAs/InGaAs/GaAs single and double quantum wells in a wide temperature range (1.8-100) K. We perform a comparison of our experimental…
Theory of weak localization is developed for electrons in semiconductor quantum wells grown along [110] and [111] crystallographic axes. Anomalous conductivity correction caused by weak localization is calculated for symmetrically doped…
We investigate two-dimensional hole transport in GaSb quantum wells at cryogenic temperatures using gate-tunable devices. Measurements probing the valence band structure of GaSb unveil a significant spin splitting of the ground subband…
We have studied the phenomenon of weak localization in multi-quantum-well (MQW) structures in the regime of weak tunneling, when superlattice minibands are not formed. We have calculated the effect of weak localization on conductivity,…
While electron-electron (e-e) interactions are known to influence resistivity in non-Galilean invariant two-dimensional (2D) systems, their effect on magnetotransport is not fully understood. Conventional models for simple bands often…
InAs/GaSb heterostructure is one of the systems where quantum spin Hall effect is predicted to arise. However, as confirmed by recent experimental studies, the most significant highlight of the effect i.e., the conductance quantization due…
We induce surface carrier densities up to $\sim7\cdot 10^{14}$cm$^{-2}$ in few-layer graphene devices by electric double layer gating with a polymeric electrolyte. In 3-, 4- and 5-layer graphene below 20-30K we observe a logarithmic upturn…
A magnetotransport and quantum capacitance of the two-dimensional electron gas in HgTe/Cd$_x$Hg$_{1-x}$Te quantum wells of a width ($20.2-46.0$)~nm are experimentally investigated. It is shown that the first energy subband of spatial…
We study the spin-orbit interaction (SOI) in InAs/ GaSb and InAs quantum wells. We show through temperature- and gate-dependent magnetotransport measurements of weak antilocalization that the dominant spin-orbit relaxation mechanism in our…
We have performed the first experimental investigation of quantum interference corrections to the conductivity of a bilayer graphene structure. A negative magnetoresistance - a signature of weak localisation - is observed at different…
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where…
Magnetotransport properties of a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T=1.4 K and 4.2 K. The structure studied consists of a Si…
The longitudinal resistivity $\rho_{xx}$ of two-dimensional electron gases formed in wells with two subbands displays ringlike structures when plotted in a density--magnetic-field diagram, due to the crossings of spin-split Landau levels…
We study theoretically the electrical transport of two-dimensional (2D) massive Dirac fermions, which are described by the 2 by 2 massive Dirac Hamiltonian, and with a gap at the charge neutrality point. Through analytical diagrammatical…
We report the growth and magneto-transport studies of Pd$_{3}$Bi$_{2}$S$_{2}$ (PBS) thin films synthesized by pulsed laser deposition (PLD) technique. The magneto-transport study on pristine and post annealed films show the presence of more…
The resistivity of two-dimensional (2D) metals generally exhibits insensitivity to electron-electron scattering. However, it's worth noting that Galilean invariance may not hold true in systems characterized by a spectrum containing…
The longitudinal resistivity of two dimensional (2D) electrons placed in strong magnetic field is significantly reduced by applied electric field, an effect which is studied in a broad range of magnetic fields and temperatures in GaAs…
A detailed investigation of the metallic behaviour in high quality GaAs-AlGaAs two dimensional hole systems reveals the presence of quantum corrections to the resistivity at low temperatures. Despite the low density ($r_{s}>10$) and high…
We investigate the interference correction to the conductivity of a medium consisting of metallic grains connected by tunnel junctions. Tunneling conductance between the grains, $e^2g_{\rm T}/\pi\hbar$, is assumed to be large, $g_{\rm T}\gg…