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Correlated oxides can exhibit complex magnetic patterns, characterized by domains with vastly different size, shape and magnetic moment spanning the material. Understanding how magnetic domains form in the presence of chemical disorder and…

强关联电子 · 物理学 2021-11-12 He Zhao , Zach Porter , Xiang Chen , Stephen D. Wilson , Ziqiang Wang , Ilija Zeljkovic

The effective Mott gap measured by scanning tunneling microscopy (STM) in the lightly doped Mott insulator $(\rm{Sr}_{1 -x}\rm{La}_x)_2\rm{IrO}_4$ differs greatly from values reported by photoemission and optical experiments. Here, we show…

Momentum resolved inelastic resonant x-ray scattering is used to map the evolution of charge excitations over a large range of energies, momenta and doping levels in the electron doped Mott insulator class Nd$_{2-x}$Ce$_x$CuO$_4$. As the…

强关联电子 · 物理学 2008-12-11 Y. W. Li , D. Qian , L. Wray , D. Hsieh , Y. Kaga , T. Sasagawa , H. Takagi , R. S. Markiewicz , A. Bansil , H. Eisaki , S. Uchida , M. Z. Hasan

The electron-doping-driven collapse of the charge gap and staggered magnetization of the spin-orbit-assisted Mott insulator Sr$_{3}$Ir$_{2}$O$_{7}$ is explored via first-principles computational methods. In the antiferromagnetic phase, the…

强关联电子 · 物理学 2018-08-15 Michael W. Swift , Zach Porter , Stephen D. Wilson , Chris G. Van de Walle

The one-third monolayer Sn layer on Si(111) has long been considered a benchmark system for exploring two-dimensional Mott physics, owing to its narrow bandwidth and sizable on-site Coulomb repulsion. Previous experiments suggested the…

Though most fermionic Mott insulators order at low temperatures, ordering is ancillary to their insulating behaviour. Our emphasis here is on disentangling ordering from the intrinsic strongly correlated physics of a doped half-filled band.…

强关联电子 · 物理学 2009-11-10 Tudor D. Stanescu , Philip Phillips

In cuprate superconductors superconductivity develops as a unique cross over between the two extremal phases characterizing these compounds. The extremal phases are known to be an antiferromagnetic (AF) Mott insulator one, on one side, and…

超导电性 · 物理学 2007-05-23 Mladen Prester

We study a two-dimensional single band Hubbard Hamiltonian with antisymmetric spin-orbit coupling. We argue that this is the minimal model to understand the electronic properties of locally non-centrosymmetric transition-metal (TM) oxides…

强关联电子 · 物理学 2021-04-30 Mehdi Biderang , Alireza Akbari , Jesko Sirker

Sr2IrO4 is a spin-orbit coupled insulator with an antiferromagnetic (AFM) transition at TN=240 K. We report results of a comprehensive study of single-crystal Sr2Ir1-xTbxO4. This study found that mere 3% (x=0.03) tetravalent Tb4+(4f7)…

In Mott insulators the evolution of antiferromagnetic order to superconducting or charge-density-wave-like states upon chemical doping underpins the control of quantum phases. Photo-doping can induce similar transitions on the ultrafast…

Since the discovery of half-filled cuprate to be a Mott insulator, the excitation spectra above the chemical potential for the unoccupied states has attracted many research attentions. There were many theoretical works using different…

超导电性 · 物理学 2017-01-25 Huan-Kuang Wu , Ting-Kuo Lee

We apply the recently developed slave fermion approach to study the doped Mott insulator in the one-band Hubbard and Hubbard-Heisenberg models. Our results produce several subtle features in the electron spectra and confirm the key role of…

强关联电子 · 物理学 2023-10-19 Zhuoqing Long , Jiangfan Wang , Yi-feng Yang

Magnetic correlations in all four phases of pure and doped vanadium sesquioxide V_2O_3 have been examined by magnetic thermal neutron scattering. While the antiferromagnetic insulator can be accounted for by a Heisenberg localized spin…

强关联电子 · 物理学 2009-10-31 Wei Bao , C. Broholm , G. Aeppli , S. A. Carter , P. Dai , T. F. Rosenbaum , J. M. Honig , P. Metcalf , S. F. Trevino

The path from a Mott insulating phase to high temperature superconductivity encounters a rich set of unconventional phenomena involving the insulator-to-metal transition (IMT) such as emergent electronic orders and pseudogaps that…

Many emergent phenomena appear in doped Mott insulators near the insulator-to-metal transition. In high-temperature cuprate superconductors, superconductivity arises when antiferromagnetic (AFM) order is gradually suppressed by carrier…

We numerically investigate the dynamical properties of $\kappa$-type molecular conductors in their antiferromagnetic Mott insulating state. By treating the extended Hubbard model on the two-dimensional $\kappa$-type lattice within the…

强关联电子 · 物理学 2021-06-22 Hitoshi Seo , Makoto Naka

We present a theoretical investigation of the effects of correlations on the electronic structure of the Mott insulator Sr$_2$IrO$_4$ upon electron doping. A rapid collapse of the Mott gap upon doping is found, and the electronic structure…

强关联电子 · 物理学 2018-04-11 Alice Moutenet , Antoine Georges , Michel Ferrero

The interplay of spin and charge degrees of freedom, introduced by doping mobile holes into a Mott insulator with strong anti-ferromagnetic (AFM) correlations, is at the heart of strongly correlated matter such as high-Tc cuprate…

强关联电子 · 物理学 2019-06-26 Fabian Grusdt , Annabelle Bohrdt , Eugene Demler

Spin correlations in metallic and insulating phases of $V_2O_3$ and its derivatives are investigated using magnetic neutron scattering. Metallic samples have incommensurate spin correlations varying little with hole doping. Paramagnetic…

强关联电子 · 物理学 2009-10-28 Wei Bao , C. Broholm , G. Aeppli , P. Dai , J. M. Honig , P. Metcalf

This article contains a theoretical overview of the physical properties of antiferromagnetic Mott insulators in spatial dimensions greater than one. Many such materials have been experimentally studied in the past decade and a half, and we…

强关联电子 · 物理学 2009-11-10 Subir Sachdev
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