相关论文: Circular photogalvanic effect in 2D van der Waals …
We develop a theory of circular photogalvanic effect in non-gyrotropic two-dimensional transition metal dichalcogenide monolayers under interband optical transitions. Oblique incidence of circularly-polarized electromagnetic field or normal…
Dirac semimetals are expected to forbid the manifestation of the circular photogalvanic effect (CPGE) because of their crystal inversion symmetry. Here, we report the observation of the CPGE in Cd3As2 nanobelt field effect transistors, when…
The circular photogalvanic effect (CPGE) is the photocurrent generated in an optically active material in response to an applied ac electric field, and it changes sign depending on the chirality of the incident circularly polarized light.…
A detailed study of the circular photogalvanic effect (CPGE) in SiGe structures is presented. It is shown that the CPGE becomes possible due to the built-in asymmetry of quantum wells (QWs) in compositionally stepped samples and in…
We study the photogalvanic effect caused by a simultaneous action of circular-polarized interband and linearly-polarized intraband illuminations. It is found that, in such conditions, the steady photocurrent appears. The effect originates…
The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such…
The photogalvanic effect (PGE) occurring in noncentrosymmetric materials enables the generation of a dc photocurrent at zero bias with a high polarization sensitivity, which makes it very attractive in photodetection. However, the magnitude…
Weyl semimetals are gapless topological states of matter with broken inversion and/or time reversal symmetry, which can support unconventional responses to externally applied electrical, optical and magnetic fields. Here we report a new…
The circular photogalvanic effect (CPGE) has been observed in (100)-oriented $p$-GaAs/AlGaAs quantum wells at normal incidence of far-infrared radiation. It is shown that monopolar optical spin orientation of free carriers causes an…
We study theoretically transverse photoconductivity induced by circularly polarized radiation, i.e. the photovoltaic Hall effect, and linearly polarized radiation causing intraband optical transitions in two-dimensional electron gas (2DEG).…
We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time resolved photoluminescence. A…
We investigate the circular photogalvanic effect (CPGE) in single-crystalline methylammonium lead iodide microcrystals under a static electric field. The external electric field can enhance the magnitude of the helicity dependent…
The circular photogalvanic effect (CPGE) is the part of a photocurrent that switches depending on the sense of circular polarization of the incident light. It has been consistently observed in systems without inversion symmetry and depends…
The valley degree of freedom in layered transition-metal dichalcogenides (MX2) provides the opportunity to extend functionalities of novel spintronics and valleytronics devices. Due to spin splitting induced by spin-orbital coupling (SOC),…
Transition metal dichalcogenides (TMDCs) constitute a promising platform for symmetry-engineered responses to circularly polarized light. The high crystal symmetry of centrosymmetric 2H-phase TMDCs inherently forbids the circular…
Weyl semimetal (WSM) is expected to be an ideal spintronic material owing to its spin currents carried by the bulk and surface states with spin-momentum locking. A photocurrent generation in noncentrosymmetric WSM was also predicted owing…
Spin photogalvanic effect (SPGE) is an efficient method to generate a spin current by photoexcitation in a contactless and ultra-fast way. In two-dimensional (2D) collinear antiferromagnetic (AFM) materials that preserve the combined…
Thanks to the strong spin-orbit interaction (SOI), HgTe-based quantum wells (QWs) exhibit very rich spin-related properties. But the full descriptions of them are beyond the simple parabolic band models and conventional Rashba and…
Second-order nonlinear optical responses, including photogalvanic effect (PGE) and second harmonic generation (SHG), are important physical phenomena in nonlinear optics. The PGE (SHG) related to linearly and circularly polarized light are…
We study theoretically 2D HgTe/CdTe quantum well topological insulator (TI) illuminated by circularly polarized light with frequencies higher than the difference between the equilibrium Fermi level and the bottom of the conduction band (THz…