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The coupling between structural, electronic and magnetic degrees of freedom across the metal-insulator transition in V2O3 makes it hard to determine the main driving mechanism behind the transition. Specifically, the role of magnetism has…

We determine the electronic structure and phase stability of paramagnetic V$_2$O$_3$ at the Mott-Hubbard metal-insulator phase transition, by employing a combination of an ab initio method for calculating band structures with dynamical…

强关联电子 · 物理学 2015-06-11 I. Leonov , V. I. Anisimov , D. Vollhardt

Phase transitions are key in determining and controlling the quantum properties of correlated materials. Here, by using the powerful combination of precise material synthesis and angle resolved photoelectron spectroscopy, we show evidence…

We report the simultaneous measurement of the structural and electronic components of the metal-insulator transition of VO$_2$ using electron and photoelectron spectroscopies and microscopies. We show that these evolve over different…

强关联电子 · 物理学 2014-11-18 J. Laverock , S. Kittiwatanakul , A. A. Zakharov , Y. R. Niu , B. Chen , S. A. Wolf , J. W. Lu , K. E. Smith

The local structure of V$_{2}$O$_{3}$, an archetypal strongly correlated electron system that displays a metal-insulator transition around 160 K, has been investigated via pair distribution function (PDF) analysis of neutron and x-ray total…

While the phase diagrams of the one- and multi-orbital Hubbard model have been well studied, the physics of real Mott insulators is often much richer, material dependent, and poorly understood. In the prototype Mott insulator…

强关联电子 · 物理学 2018-09-06 Frank Lechermann , Noam Bernstein , I. I. Mazin , Roser Valentí

We report an isothermal electric field-induced first-order phase transition from Mott-insulator to the metallic state in the epitaxial thin film of V$_2$O$_3$ in the temperature regime below its Mott transition temperature $\approx$ 180 K.…

强关联电子 · 物理学 2024-07-17 Binoy Krishna De , V. G. Sathe , S. B. Roy

V2O3 famously features all four combinations of paramagnetic vs antiferromagnetic, and metallic vs insulating states of matter in response to %-level doping, pressure in the GPa range, and temperature below 300 K. Using time-of-flight…

V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, doping or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a…

Symmetry-lowering structural phase transitions result in multiple degenerate structures whose coexistence is determined by macroscopic strain compatibility. In quantum materials, these structural transformations often couple to electronic…

Mott physics is characterized by an interaction-driven metal-to-insulator transition in a partially filled band. In the resulting insulating state, antiferromagnetic orders of the local moments typically develop, but in rare situations no…

We have made a detailed temperature-dependent photoemission study of VO_2/TiO_2(001) thin films, which show a metal-insulator transition at \sim 300 K. Clean surfaces were obtained by annealing the films in an oxygen atmosphere. Spectral…

强关联电子 · 物理学 2009-11-10 K. Okazaki , H. Wadati , A. Fujimori , M. Onoda , Y. Muraoka , Z. Hiroi

Controlling the Mott transition through strain engineering is crucial for advancing the development and application of memristive and neuromorphic computing devices. Yet, Mott insulators are heterogeneous due to intrinsic phase boundaries…

The temperature dependence of the Mott metal-insulator transition (MIT) is studied with a VO_2-based two-terminal device. When a constant voltage is applied to the device, an abrupt current jump is observed with temperature. With increasing…

强关联电子 · 物理学 2015-06-25 Bong-Jun Kim , Yong Wook Lee , Byung-Gyu Chae , Sun Jin Yun , Soo-Young Oh , Young-Sik Lim , Hyun-Tak Kim

Managing light-matter interactions on timescales faster than the loss of electronic coherence is key for achieving full quantum control of the final products in solid-solid transformations. In this work, we demonstrate coherent electronic…

V2O3 is an archetypal system for the study of correlation induced, Mott-Hubbard metal-insulator transitions. Despite decades of extensive investigations, the accurate description of its electronic properties remains an open problem in the…

Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a…

介观与纳米尺度物理 · 物理学 2021-04-06 Nathan J. McLaughlin , Yoav Kalcheim , Albert Suceava , Hailong Wang , Ivan K. Schuller , Chunhui Rita Du

Coupled structural and electronic phase transitions underlie the multifunctional properties of strongly-correlated materials. For example, colossal magnetoresistance1,2 in manganites involves phase transition from paramagnetic insulator to…

强关联电子 · 物理学 2010-03-23 Joyeeta Nag , Richard Haglund , Andrew Payzant , Karren More

We develop a procedure to determine the portion of exact Hartree-Fock exchange interaction contained in a hybrid density functional to treat the range of electronic correlation governing the physics of a system as a function of a…

材料科学 · 物理学 2016-02-26 Pablo Rivero , Vincent Meunier , William Shelton

We have analyzed spectral weight changes in the conduction and the valence band across insulator to metal transition (IMT) in the VO2 thin film using X-ray absorption spectroscopy (XAS) and resonant photoemission spectroscopy (PES). Through…

强关联电子 · 物理学 2019-07-31 S. S. Majid , K. Gautam , A. Ahad , F. Rahman , R. J. Choudhary , Frank M. F. De Groot , D. K. Shukla
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