相关论文: Gate field effects on the topological insulator Bi…
Several proposed applications and exotic effects in topological insulators rely on the presence of helical Dirac states at the interface between a topological and a normal insulator. In the present work, we have used low-energy…
Combining the ability to prepare high-quality, intrinsic Bi$_2$Te$_3$ topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pronounced, gate-tunable change in transport properties of…
We realize superconductor-insulator transitions (SIT) in mechanically exfoliated Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ (BSCCO) flakes and address simultaneously their transport properties as well as the evolution of density of states.…
Topological insulators (TI), with characteristic Dirac-fermion topological surface states (TSS), have emerged as a new class of electronic materials with rich potentials for both novel physics and device applications. However, a major…
Topological protected surface states are one of the hallmarks of three-dimensional topological insulators. In this work we theoretically analyze the gate-voltage-effects on a quasi-3D layer of HgTe. We find that while the gapless surface…
The topological state that emerges at the surface of a topological insulator (TI) and at the TI-substrate interface are studied in metal-hBN-Bi2Se3 capacitors. By measuring the RF admittance of the capacitors versus gate voltage, we extract…
Topological insulators(1-8) are a novel form of matter which features metallic surface states with quasirelativistic dispersion similar to graphene(9). Unlike graphene, the locking of spin and momentum and the protection by time-reversal…
Two-dimensional (2D) topological electronic insulators are known to give rise to gapless edge modes, which underlie low energy dynamics, including electrical and thermal transport. This has been thoroughly investigated in the context of…
Two-dimensional topological insulators possess conducting edge states at their boundary while being insulating in the bulk. The detection of edge states remains an open question in ultracold atom setups. We propose a configuration to…
We present an enhanced immersed interface method for simulating incompressible fluid flows in thin gaps between closely spaced immersed boundaries. This regime, common in engineered structures such as including tribological interfaces and…
Electron scattering in the topological surface state (TSS) of the bulk-insulating topological insulator Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$ was studied using quasiparticle interference observed by scanning tunneling microscopy. It was…
We report on electric-field and temperature dependent transport measurements in exfoliated thin crystals of Bi$_{2}$Se$_{3}$ topological insulator. At low temperatures ($< 50$ K) and when the chemical potential lies inside the bulk gap, the…
Superconducting proximity effect (SPE) in topological insulator (TI) and superconductor (SC) hybrid structure has attracted intense attention in recent years in an effort to search for mysterious Majorana fermions (MFs) in condensed matter…
By means of relativistic density functional theory (DFT) calculations we study electron band structure of the topological insulator (TI) Bi$_2$Se$_3$ thin films deposited on the ferromagnetic insulator (FMI) EuS substrate. In the…
InAs/GaSb and similar materials systems have generated great interest as a heterojunction for tunnel field effect transistors (TFETs) due to favorable band alignment. However, little is currently understood about how such TFETs are affected…
The appearance of topologically protected states at the surface of an ordinary insulator is a rare occurrence and to date only a handful of materials are known for having this property. An intriguing question concerns the possibility of…
Transport in InAs/GaSb heterostructures with different InAs layer thicknesses is studied using a six-terminal Hall bar geometry with a 2-$\mu$m edge channel length. For a sample with a 12-nm-thick InAs layer, non-local resistance…
Nontrivial topological superconductivity has received enormous research attentions due to its potential for diverse applications in topological quantum computing. The intrinsic issue concerning the correlation between a topological…
BiSbTeSe$_2$ is a 3D topological insulator (3D-TI) with Dirac type surface states and low bulk carrier density, as donors and acceptors compensate each other. Dominating low temperature surface transport in this material is heralded by…
In a topological insulator (TI)/magnetic insulator (MI) hetero-structure, large spin-orbit coupling of the TI and inversion symmetry breaking at the interface could foster non-planar spin textures such as skyrmions at the interface. This is…