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In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moir\'e superlattice. While it is widely recognized that a moir\'e superlattice can…

The coupling of atomic vibrations to electronic excitations - traditionally understood to be a source of energy loss in semiconductors - has recently been explored in photosynthetic light harvesting as a means to circumvent dissipation by…

材料科学 · 物理学 2026-02-04 Yifan Liu , Robert Dawson , Nathaniel Gabor , Vivek Aji

Van der Waals (vdW) heterostructures formed by 2D atomic crystals provide a powerful approach towards designer condensed matter systems. Incommensurate heterobilayers with small twisting and/or lattice mismatch lead to the interesting…

材料科学 · 物理学 2017-04-11 Qingjun Tong , Hongyi Yu , Qizhong Zhu , Yong Wang , Xiaodong Xu , Wang Yao

A GW calculation based on a truncated Coulomb interaction with an added small q limit was applied to 2D van der Waals heterolayered structures, and the Kane dispersion model was used to determine the accurate band gap edge. All ab initio…

材料科学 · 物理学 2025-06-25 Eyasu Tadesse Muda , Tewodros Eyob Ada , Kenate Nemera Nigussa , Cecil N. M. Ouma

Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2.…

Two-dimensional (2D) material heterostructures have attracted considerable attention owing to their interesting and novel physical properties, which expand the possibilities for future optoelectronic, photovoltaic, and nanoelectronic…

介观与纳米尺度物理 · 物理学 2023-07-27 Fan Li , Jialin Li , Junsheng Zheng , Yuanbiao Tong , Huanfeng Zhu , Pan Wang , Linjun Li

Charge transfer is a common phenomenon in van der Waals heterostructures with proper work function mismatch, which enables electrostatic gating to control band alignment and interlayer charge distributions. This provides a tunable platform…

强关联电子 · 物理学 2026-01-16 Yanran Shi , Min Li , Xin Lu , Jianpeng Liu

Van der Waals junctions of two-dimensional materials with an atomically sharp interface open up unprecedented opportunities to design and study functional heterostructures. Semiconducting transition metal dichalcogenides have shown…

The large variety of 2D materials and their co-integration in van der Waals (vdW) heterostructures enable innovative device engineering. In addition, their atomically-thin nature promotes the design of artificial materials by proximity…

介观与纳米尺度物理 · 物理学 2021-10-20 Juan F. Sierra , Jaroslav Fabian , Roland K. Kawakami , Stephan Roche , Sergio O. Valenzuela

Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional…

Heterostructures based on atomically thin semiconductors are considered a promising emerging technology for the realization of ultrathin and ultralight photovoltaic solar cells on flexible substrates. Much progress has been made in recent…

We report first-principles calculations of the structural and vibrational properties of the synthesized two-dimensional van der Waals heterostructures formed by single-layers dichalcogenides MoSe2 and WSe2. We show that, when combining…

材料科学 · 物理学 2022-01-26 F. Mahrouche , K. Rezouali , F. Zaabar , A. Molina-Sánchez

The atomic-level vdW heterostructures have been one of the most interesting quantum material systems, due to their exotic physical properties. The interlayer coupling in these systems plays a critical role to realize novel physical…

强关联电子 · 物理学 2021-03-16 Xiaoli Ma , Shaohua Fu , Jianwei Ding , Meng Liu , Ang Bian , Fang Hong , Jia-Tao Sun , Xiaoxian Zhang , Xiaohui Yu , Dawei He

Layer-by-layer assembly of van der Waals (vdW) heterostructures underpins new discoveries in solid state physics, material science and chemistry. Despite the successes, all current 2D material (2DM) transfer techniques rely on the use of…

Atomically thin vanadium diselenide (VSe2 ) is a two-dimensional transition metal dichalcogenide exhibiting attractive properties due to its metallic 1T-phase. With the recent development of methods to manufacture high-quality monolayer VSe…

强关联电子 · 物理学 2021-05-14 Tae Gwan Park , Byoung Ki Choi , Junho Park , Jungdae Kim , Young Jun Chang , Fabian Rotermund

Van der Waals heterobilayers based on 2D transition metal dichalcogenides have been recently shown to support robust and long-lived valley polarization for potential valleytronic applications. However, the role of the band structure and…

Twisted transition metal dichalcogenide (TMD) bilayers exhibit periodic moir\'e potentials, which can trap excitons at certain high-symmetry sites. At small twist angles, TMD lattices undergo an atomic reconstruction, altering the moir\'e…

介观与纳米尺度物理 · 物理学 2024-11-26 Joakim Hagel , Samuel Brem , Ermin Malic

Van der Waals (vdW) materials have greatly expanded our design space of heterostructures by allowing individual layers to be stacked at non-equilibrium configurations, for example via control of the twist angle. Such heterostructures not…

介观与纳米尺度物理 · 物理学 2022-02-04 Xirui Wang , Kenji Yasuda , Yang Zhang , Song Liu , Kenji Watanabe , Takashi Taniguchi , James Hone , Liang Fu , Pablo Jarillo-Herrero

Moir\'{e} interference effects have profound impact on the optoelectronic properties of vertical van der Waals structures. Here we establish secondary electron imaging in a scanning electron microscope as a powerful technique for…

介观与纳米尺度物理 · 物理学 2023-06-27 Anna Rupp , Jonas Göser , Zhijie Li , Ismail Bilgin , Anvar Baimuratov , Alexander Högele

Van der Waals heterostructures comprise a new class of artificial materials formed by stacking atomically-thin planar crystals. Here, we demonstrate band structure engineering of a van der Waals heterostructure composed of a monolayer…

介观与纳米尺度物理 · 物理学 2013-05-22 B. Hunt , J. D. Sanchez-Yamagishi , A. F. Young , K. Watanabe , T. Taniguchi , P. Moon , M. Koshino , P. Jarillo-Herrero , R. C. Ashoori