相关论文: 4f Conduction in the Magnetic Semiconductor NdN
The rare-earth nitride ferromagnetic semiconductors owe their varying magnetic properties to the progressive filling of 4f shell across the series. Recent electrical transport measurements on samarium nitride, including the observation of…
Ferrimagnetic Mn$_4$N is a promising material for heat flux sensors based on the anomalous Nernst effect (ANE) because of its sizable uniaxial magnetic anisotropy ($K_{\rm u}$) and low saturation magnetization ($M_{\rm s}$). We…
In typical rare-earth lanthanide compounds, the localized 4\textit{f}-electrons have a weak effect on the electrical conduction, limiting their influence on the Berry curvature and, hence, the intrinsic anomalous Hall effect. A…
We have performed soft and hard X-ray photoemission spectroscopies on NdTi2Al20 and NdBe13 which show antiferromagnetic ordering at low temperatures. The Nd 3d core-level photoemission and Nd 3d-4f valence-band resonant photoemission…
Recent works aiming at understanding magnetotransport phenomena in ferromagnetic III-V and II-VI semiconductors are described. Theory of the anomalous Hall effect in p-type magnetic semiconductors is discussed, and the relative role of…
The underscreened Kondo lattice consisting of a single twofold degenerate conduction band and a CEF split 4f-electron quasi-quartet has non-conventional quasiparticle dispersions obtained from the constrained mean-field theory. An…
A series of thin films Fe$_{4-x}$Ge$_x$N (x=0-1) was fabricated onto MgO substrates by magnetron sputtering with the aim of studying the possible enhancement of the anomalous Nernst effect (ANE), envisaged based on Density Functional Theory…
We present a theory of the anomalous Hall effect in ferromagnetic (Mn,III)V semiconductors. Our theory relates the anomalous Hall conductance of a homogeneous ferromagnet to the Berry phase acquired by a quasiparticle wavefunction upon…
Nitrogen vacancy doped SmN$_{1-\delta}$ is a semiconductor which lies in the intermediary between insulating-ferromagnetic SmN and metallic-anti-ferromagnetic Sm. The dopant electrons resulting from nitrogen vacancies have recently been…
The Hall effect in InMnAs layers with MnAs inclusions of 20-50 nm in size is studied both theoretically and experimentally. We find that the anomalous Hall effect can be explained by the Lorentz force caused by the magnetic field of…
Atomic $4f$ states have been found to be essential players in the physical behavior of lanthanide compounds, at the Fermi level $E_F$ as in the proposed topological Kondo insulator SmB$_6$, or further away as in the magnetic superconductor…
Rapid developments in material research of metallic ferromagnetic (III,Mn)V semiconductors over the past few years have brought a much better understanding of these complex materials. We review here some of the main developments and current…
We present a theoretical study of the infrared magneto-optical properties of ferromagnetic (III,Mn)V semiconductors. Our analysis combines the kinetic exchange model for (III,Mn)V ferromagnetism with Kubo linear response theory and Born…
We report electron transport studies of a (001) GdN film grown on the square net presented by the (001) surface of LaAlO3, motivated by recent advances in epitaxial thin-film growth of several lanthanide nitrides. The film we have grown for…
The anomalous Hall conductivity in the nodal line semimetals (NLSMs) due to the presence of a symmetry-protected nodal ring adds complexity in the investigation of their transport properties. By employing quantum kinetic theory and…
The respective unique merit of antiferromagnets and two-dimensional (2D) materials in spintronic applications inspire us to exploit 2D antiferromagnetic spintronics. However, the detection of the N\'eel vector in 2D antiferromagnets remains…
We fabricated NiFe$_\textrm{2}$O$_\textrm{x}$ thin films on MgAl$_2$O$_4$(001) substrates by reactive dc magnetron co-sputtering varying the oxygen partial pressure during deposition. The fabrication of a variable material with oxygen…
We report on the MBE-growth and magnetotransport properties of p-type BeMnTe, a new ferromagnetic diluted magnetic semiconductor. BeMnTe thin film structures can be grown almost lattice matched to GaAs for Mn concentrations up to 10% using…
We investigate the behavior of the Hall coefficient in the case of antiferromagnetism driven by Fermi surface nesting, and find that the Hall coefficient should abruptly increase with the onset of magnetism, as recently observed in vanadium…
Model combinatorial films (CFs) which host a pure superconductor adjacent to a ferromagneticsuperconducting hybrid film (HF) are manufactured for the study of the influence of ferromagnetic nanoparticles (FNs) on the nucleation of…