相关论文: Graded composition Cd$_x$Zn$_{1-x}$Te films grown …
We present the structural and transport properties of La$_{1-x}$Sr$_x$Co$_{1-y}$Nb$_y$O$_3$ ($y=$ 0.1 and $x=$ 0; $y=$ 0.15 and $x=$ 0.3) thin films grown on (001) orientated single crystalline ceramic substrates to investigate the effect…
We report on structural and optical properties of InGaN/GaN thin films, with a 0.46o misalignment between the surface and the (0001) plane, which were grown by metal-organic chemical vapor deposition (MOCVD) on 0.34o miscut sapphire…
Highly textured chalcogenide films have recently gained significant interest for phase-change memory applications. Several reports have highlighted that programming efficiency improves in devices featuring superlattice stacks, such as…
Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD) technique opens new possibilities for reducing thin film growth temperature and producing novel semiconductor materials suitable for the future generation of high…
Chromium selenide thin films were grown epitaxially on Al${_2}$O${_3}$(0001) and Si(111)-(7${\times}$7) substrates using molecular beam epitaxy (MBE). Sharp streaks in reflection high-energy electron diffraction and triangular structures in…
Using comprehensive x-ray reciprocal space mapping, we establish the precise lattice-matching composition for wurtzite $Sc_xAl_{1-x}N$ layers on (0001) GaN to be x = 0.14+/-0.01. 100-nm thick $Sc_xAl_{1-x}N$ films (x = 0.09 - 0.19) were…
This work presents a comparison of the structural, chemical and electronic properties of multi-layer graphene grown on SiC(000-1) by using two different growth approaches: thermal decomposition and chemical vapor deposition (CVD). The…
Here we demonstrate the controlled growth of Bi(110) and Bi(111) films on an (insulating) $\alpha$-Al$_2$O$_3$(0001) substrate by surface X-ray diffraction and X-ray reflectivity using synchrotron radiation. At temperatures as low as 40 K,…
We explore the phase coherence of thin films of the topological insulator material Bi2Se2Te grown through pulsed laser deposition (PLD) technique. The films were characterised using various techniques for phase and composition. The films…
MnGe has been grown as a thin film on Si(111) substrates by molecular beam epitaxy. A 10 \AA\ layer of MnSi was used as seedlayer in order to establish the B20 crystal structure. Films of a thickness between 45 and 135 \AA\ have been…
CdS thin film samples were fabricated using spin coating technique on normal glass and conductive glass substrates and annealed at different temperatures. According to the XRD patterns of films prepared on normal glass substrates,…
W-SiC composite material is a promising plasma-facing material candidate alternative to pure W due to the low neutron activation, low impurity radiation, and low tritium diffusivity of SiC while leveraging the high erosion resistance of the…
We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is…
ZnSnN2 is an Earth-abundant analog to the III-Nitrides with potential as a solar absorber due to its direct bandgap, steep absorption onset, and disorder-driven bandgap tunability. Despite these desirable properties, discrepancies in the…
We studied the structural and magnetic properties of \FeC~thin films deposited by co-sputtering of Fe and C targets in a direct current magnetron sputtering (dcMS) process at a substrate temperature (\Ts) of 300, 523 and 773\,K. The…
This paper reports on the deposition and photoluminescence of amorphous and crystalline thin films of zinc gallium oxide with Ga:Zn atomic ratio varied between 0.3 and 5.7. The films are prepared by reactive direct current magnetron…
Computationally guided high-throughput synthesis is used to explore the Zn-V-N phase space, resulting in the synthesis of a novel ternary nitride Zn$_2$VN$_3$. Following a combinatorial PVD screening, we isolate the phase and synthesize…
Films of Cu-K-In-Se were co-evaporated at varied K/(K+Cu) compositions and substrate temperatures (with constant (K+Cu)/In ~ 0.85). Increased Na composition on the substrate's surface and decreased growth temperature were both found to…
We investigated the chemical beam epitaxy of GaP1-xNx to correlate the growth parameters with their properties when they are grown on nominally (001)-oriented Si substrates, as desired for the lattice-matched integration of optoelectronic…
Colloidal quantum dots (cQDs) are now a mature nanomaterial with optical properties customizable through varying size and composition. However, their use in optical devices is limited as they are not widely available in convenient forms…