相关论文: Gate-tunable Strong Spin-orbit Interaction in Two-…
We experimentally investigate magnetoresistance of a single GeTe-Ni junction between the $\alpha$-GeTe topological semimetal and thick nickel film at room and liquid helium temperatures. For the magnetic field parallel to the junction…
Spin transport property of polarization induced two-dimensional electron gas channel formed in the central vertical plane of a wedge-shaped \textit{c}-oriented GaN nanowall is investigated theoretically. Since the confining potential…
Topological Hall effect (THE) of electrons coupled to a noncoplanar spin texture has been studied so far for the strong- and weak-coupling regimes separately; the former in terms of the Berry phase and the latter by perturbation theory. In…
Topological spin textures as an emerging class of topological matter offer a medium for information storage and processing. The recently discovered topological Hall effect (THE) is considered as a fingerprint for electrically probing…
We study the thermal conductivity in disordered $s$-wave superconductors. Expanding on previous works for normal metals, we develop a formalism that tackles particle diffusion as well as the weak localization (WL) and weak anti-localization…
New materials such as nodal-line semimetals offer a unique setting for novel transport phenomena. Here, we calculate the quantum correction to conductivity in a disordered nodal-line semimetal. The torus-shaped Fermi surface and encircled…
We present a comprehensive first-principles investigation of the structural, electronic, vibrational, and topological properties of tellurium across its dimensional hierarchy, including bulk trigonal Te-I, two-dimensional tellurene…
In this paper, we discuss the impact of tellurium (Te) doping on the spinel superconductor CuRh2Se4. We conducted a comprehensive evaluation of the structural and superconducting properties of the system using various techniques, including…
We have determined the spin-orbit scattering length of two-dimensional layered 2H-TaSe2 metallic crystals by detailed characterization of the weak anti-localization phenomena in this strong spin-orbit interaction material. By fitting the…
The discovery and manipulation of topological Hall effect (THE), an abnormal magnetoelectric response mostly related to the Dzyaloshinskii-Moriya interaction (DMI), are promising for next-generation spintronic devices based on topological…
Material research has been a major driving force in the development of modern nano-electronic devices. In particular, research in magnetic thin films has revolutionized the development of spintronic devices; identifying new magnetic…
The weak antilocalization effect is observed in a p-type Hg0.8Cd0.2Te thin film with thickness ~10 micrometers. Based on the analysis of composition, carrier species and excellent fitting of data with a model concerning weak…
The magnetoresistance associated with quantum interference corrections in a high mobility, gated InGaAs/InP quantum well structure is studied as a function of temperature, gate voltage, and angle of the tilted magnetic field. Particular…
Spin-related electronics using two dimensional (2D) van der Waals (vdW) materials as a platform are believed to hold great promise for revolutionizing the next generation spintronics. Although many emerging new phenomena have been…
This study investigates the quantum correction effect on electrical conductivity using a two-dimensional Wolff Hamiltonian, which is an effective model of the spin-orbit coupling (SOC) lattice system. The non-adiabatic transition processes…
In recent years, layered transition-metal dichalcogenides (TMDs) have attracted considerable attention because of their rich physics; for example, these materials exhibit superconductivity, charge density waves, and the valley Hall effect.…
Combining the synthetic tunability of molecular compounds with the optical selection rules of transition metal dichalcogenides (TMDC) that derive from spin-valley coupling could provide interesting opportunities for the readout of quantum…
The challenging task of scaling-down the size of the power saving electronic devices can be accomplished by exploiting the spin degree of freedom of the conduction electrons in van der Waals (vdW) spintronic architectures built with 2D…
The two-dimensional (2D) logarithmic character of Coulomb interaction between charges and the resulting logarithmic confinement is a remarkable inherent property of high dielectric constant (high-$\kappa$) thin films with far reaching…
Semiconductor nanowires featuring strong spin-orbit interactions (SOI), represent a promising platform for a broad range of novel technologies, such as spintronic applications or topological quantum computation. However, experimental…