相关论文: Gallium Nitride FET Model

Gate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emerging devices, which are well suited to pursue scaling beyond lateral scaling limitations around 7nm. This work explores the relative merits and drawbacks of the…

In order to study the novel gas detection or sensing applications of gallium nitride monolayer (GaN-ML), we mainly focused on the structural, energetic, electronic and magnetic properties of toxic gas molecules (CO, NO) adsorbed on…

We report calculated, electronic and related properties of wurtzite and zinc blende gallium nitrides (w-GaN, zb-GaN). We employed a local density approximation (LDA) potential and the linear combination of atomic orbital (LCAO) formalism.…

Tantalum nitride (TaN) has attracted considerable attention due to its unique electronic and thermal properties, high thermal conductivity, and applications in electronic components. However, for the {\theta}-phase of TaN, significant…

Erbium (Er) doped GaN has been studied extensively for optoelectronic applications, yet its defect physics is still not well understood. In this work, we report a first-principles hybrid density functional study of the structure,…

The conceptual design of a compact source of GeV-class muons is presented, based on a plasma based electron-gamma collider. Evaluations of muon flux, spectra and brilliance are presented, carried out with ad-hoc montecarlo simulations of…

In this paper, the recent advances of our studies on hot carrier degradation (HCD) are presented from trap-based approach. The microscopic speculation of interface trap generation is carried out by time-dependent DFT (TDDFT) simulation in…

Developing high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of planar etching treatment and trench formation on the…

In this article, the bias-dependence of intrinsic channel thermal noise of single-layer graphene field-effect transistors (GFETs) is thoroughly investigated by experimental observations and compact modeling. The findings indicate an…

Gallium Oxide (Ga2O3) has a huge potential on the power device for its high breakdown filed and good transport properties. beta-Ga2O3 as the thermodynamics stable phase, has been demonstrated to form high electron mobility transistor (HEMT)…

To date, the generic polarization of Bernardini, Fiorentini and Vanderbilt (PBFV) has been widely used to address the issue of polarity in III-V nitride semiconductors, but improvements in nitride materials and the performance of…

Sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff ratio up to 10^6 and on-state current density as high as…

We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate…

Heat generated in gallium nitride (GaN) high-electron-mobility transistors (HEMTs) is often concentrated in nanoscale regions and must dissipate through multiple heterostructures. However, the influence of non-uniform heat sources on the…

We present a Green's function method for the evaluation of the particle density profile and of the higher moments of the one-body density matrix in a mesoscopic system of N Fermi particles moving independently in a linear potential. The…

Semiconductor nanowires (NWs) have a broad range of applications for nano- and optoelectronics. The strain field of gallium nitride (GaN) NWs could be significantly changed when contacts are applied to them to form a final device,…

An InAlN/GaN HEMT device was studied using extensive temperature dependent DC IV measurements and CV measurements. Barrier traps in the InAlN layer were characterized using transient analysis. Forward gate current was modelled using…

Graphite nanofibers (GNFs) have been demonstrated to be a promising material for hydrogen storage and heat management in electronic devices. Here, by means of first-principles and transport simulations, we show that GNFs can also be an…

At room temperature, micron-sized sheets of freestanding graphene are in constant motion even in the presence of an applied bias voltage. We quantify the out-of-plane movement by collecting the displacement current using a nearby small-area…

Junctionless transistors made of silicon have previously been demonstrated experimentally and by simulations. Junctionless devices do not require fabricating an abrupt source-drain junction and thus can be easier to implement in aggressive…