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Ordinary doping by electrons (holes) generally means that the Fermi level shifts towards the conduction band (valence band) and that the conductivity of free carriers increases. Recently, however, some peculiar doping characteristics were…

材料科学 · 物理学 2019-03-27 Qihang Liu , Gustavo M. Dalpian , Alex Zunger

Over the last few years, group IV hexagonal-diamond type crystals have acquired great attention in semiconductor physics thanks to the appearance of novel and very effective growth methods. However, many questions remain unaddressed on…

材料科学 · 物理学 2020-07-09 Michele Amato , Thanayut Kaewmaraya , Alberto Zobelli

Dynamical mean-field theory (DMFT) has been employed in conjunction with density functional theory (DFT+DMFT) to investigate the metal-insulator transition (MIT) of strongly correlated $3d$ electrons due to quantum confinement. We shed new…

强关联电子 · 物理学 2021-06-02 A. D. N. James , M. Aichhorn , J. Laverock

The observation of high-$T_c$ superconductivity in bilayer nickelate La$_3$Ni$_2$O$_7$ under high pressure provides a new venue for exploring novel unconventional superconductors and elucidating the mechanism of high-$T_c$…

超导电性 · 物理学 2026-03-10 Yingying Gao , Wei Zhou , W. H. Guo , Chunqiang Xu , H. F. Chen , Z. D. Han , Xiaofeng Xu , Yinzhong Wu , Bin Qian

To understand the link between doping and electronic properties in high temperature superconductors, we report first-principles calculations on the oxygen doping effect for the single layer cuprate HgBa$_2$CuO$_{4+\delta}$. The doping…

超导电性 · 物理学 2007-05-23 P. Süle , C. Ambrosch-Draxl , H. Auer , E. Y. Sherman

Recently, superconductivity with a $T_c$ up to 78 K has been reported in bulk samples of the bilayer nickelate La$_3$Ni$_2$O$_7$ at pressures above 14 GPa. Important theoretical tasks are the formulation of relevant low-energy models and…

强关联电子 · 物理学 2023-11-17 Viktor Christiansson , Francesco Petocchi , Philipp Werner

Electric double layer transistor configurations have been employed to electrostatically dope single crystals of insulating SrTiO_{3}. Here we report on the results of such doping over broad ranges of temperature and carrier concentration…

The discovery of superconductivity in multilayer nickelates under pressure has intensified interest in understanding the magnetic and electronic properties of Ruddlesden-Popper nickelates. Using density functional theory with Hubbard…

We have investigated the electronic structure and the Fermi surface of SnO using density functional theory (DFT) calculations within recently proposed exchange-correlation potential (PBE+mBJ) at ambient conditions and high pressures up to…

材料科学 · 物理学 2015-05-28 J. A. McLeod , A. V. Lukoyanov , E. Z. Kurmaev , L. D. Finkelstein , A. Moewes

The insulator to metal transition in LaTiO_3 induced by La substitution via Sr is studied within multi-band exact diagonalization dynamical mean field theory at finite temperatures. It is shown that weak hole doping triggers a large…

强关联电子 · 物理学 2009-11-13 A. Liebsch

Modulation of the charge carrier density in a Mott material by remote doping from a highly doped conventional band insulator is proposed to test theoretical predictions of band filling control of the Mott metal-insulator transition without…

材料科学 · 物理学 2011-11-11 Junwoo Son , Bharat Jalan , Adam P. Kajdos , Leon Balents , S. James Allen , Susanne Stemmer

Electron- and hole-doped La$_2$CoMnO$_6$(LCMO) are investigated using first principles DFT calculations. Hole and electron doping are achieved respectively by introducing Sr$^{2+}$ at La$^{3+}$ sites and by inducing O-site vacancies in…

材料科学 · 物理学 2021-09-02 Anasua Khan , Swastika Chatterjee , T. K. Nath , A. Taraphder

We study a model for the metal-insulator (MI) transition in the rare-earth nickelates RNiO$_3$, based upon a negative charge transfer energy and coupling to a rock-salt like lattice distortion of the NiO$_6$ octahedra. Using exact…

强关联电子 · 物理学 2014-03-12 Steve Johnston , Anamitra Mukherjee , Ilya Elfimov , Mona Berciu , George A. Sawatzky

The electron-doping-driven collapse of the charge gap and staggered magnetization of the spin-orbit-assisted Mott insulator Sr$_{3}$Ir$_{2}$O$_{7}$ is explored via first-principles computational methods. In the antiferromagnetic phase, the…

强关联电子 · 物理学 2018-08-15 Michael W. Swift , Zach Porter , Stephen D. Wilson , Chris G. Van de Walle

Motivated by the puzzling report of the observation of a ferromagnetic insulating state in LaMnO$_3$/SrTiO$_3$ heterostructures, we calculate the electronic and magnetic state of LaMnO$_3$, coherently matched to a SrTiO$_3$ square substrate…

材料科学 · 物理学 2019-09-25 Hrishit Banerjee , Oleg Janson , Karsten Held , Tanusri Saha-Dasgupta

The (SrTiO$_3$)$_m$/(SrVO$_3$)$_n$ $d^0-d^1$ multilayer system is studied with first principles methods through the observed insulator-to-metal transition with increasing thickness of the SrVO$_3$ layer. When correlation effects with…

强关联电子 · 物理学 2015-05-19 Victor Pardo , Warren E. Pickett

Modifying the optoelectronic properties of nanostructured materials through introduction of dopant atoms has attracted intense interest. Nevertheless, the approaches employed are often trial and error, preventing rational design. We…

材料科学 · 物理学 2021-07-13 Michael G. Taylor , Heather J. Kulik

We investigate the origin of superconductivity in doped SrTiO$_3$ (STO) using a combination of density functional and strong coupling theories within the framework of quantum criticality. Our density functional calculations of the…

We develop a procedure to determine the portion of exact Hartree-Fock exchange interaction contained in a hybrid density functional to treat the range of electronic correlation governing the physics of a system as a function of a…

材料科学 · 物理学 2016-02-26 Pablo Rivero , Vincent Meunier , William Shelton

The introduction of magnetism in SnTe-class topological crystalline insulators is a challenging subject with great importance in the quantum device applications. Based on the first-principles calculations, we have studied the defect…

材料科学 · 物理学 2016-05-17 Wang Na , Wang Jianfeng , Si Chen , Gu Bing-Lin , Duan Wenhui