相关论文: Parasitic conduction channels in topological insul…
We present the intrinsic optical properties over a broad spectral range of TiN thin films deposited on a Si/SiO$_2$ substrate. We analyze the measured reflectivity spectra of the film-substrate multilayer structure within a well-establish…
A simple electronic experiment with a field effect transistor type microstructure is suggested. The thin superconductor layer is the source-drain channel of the layered structure where an AC current is applied. It is necessary to measure…
Infrared transparent conductors have long been sought due to their broad optoelectronic applications in the infrared wavelength range. However, the search for ideal materials has been limited by the inherent trade-off between electrical…
Heteroepitaxial structures based on Bi$_{2}$Te$_{3}$-type topological insulators (TIs) exhibit exotic quantum phenomena. For optimal characterization of these phenomena, it is desirable to control the interface structure during film growth…
Ultra-thin topological insulators provide a platform of realizing many exotic phenomena such a Quantum spin Hall effect, Quantum anomalous Hall effect, etc. These effects or states are characterized by quantized transport behavior of edge…
In most semiconductors and insulators the presence of a small density of charged impurities cannot be avoided, but their effect can be reduced by compensation doping, i.e. by introducing defects of opposite charge. Screening in such a…
We propose a model of transport in thick-film resistors which naturally explains the observed nonuniversal values of the conductance exponent t extracted in the vicinity of the percolation transition. Essential ingredients of the model are…
In an ideal 3D topological insulator (TI), the bulk is insulating and the surface conducting due to the existence of metallic states that are localized on the surface; these are the topological surface states. Quaternary Bi-based compounds…
We demonstrate the capability of growing high quality ultrathin films of the topological insulators Bi2Se3 and Bi2Te3 using molecular beam epitaxy. Unlike previous growth techniques, which often pin the Fermi energy in the conduction band…
We present in this paper the conductance maps at 100 mK in the disordered polycrystalline film of titanium nitride (TiN). At 5 nm, the film is close to quasi-two dimensional limit and exhibits features pertaining to the superconductor to…
The newly-discovered three-dimensional strong topological insulators (STIs) exhibit topologically-protected Dirac surface states. While the STI surface state has been studied spectroscopically by e.g. photoemission and scanned probes,…
The electrical conductivity of a CdS thin film, controlled by grain structures is essential to enhance its photoconductivity to be able to be fit as a window material in CdS/CdTe heterojunction solar cell. In order to characterize a thin…
Magnetic devices are a leading contender for implementing memory and logic technologies that are nonvolatile, that can scale to high density and high speed, and that do not suffer wear-out. However, widespread applications of magnetic…
We consider ion transport through protein ion channels in lipid membranes and water-filled nanopores in silicon films. It is known that, due to the large ratio of dielectric constants of water and the surrounding material, an ion placed…
A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and…
Tensile strained bulk HgTe is a three-dimensional topological insulator. Because of the energetic position of its surface state Dirac points relative to its small bulk gap, the electronic properties of the relatively thin MBE-grown films…
The most interesting experimental results obtained in studies of 2D and 3D topological insulators (TIs) based on HgTe quantum wells and films are reviewed. In the case of 2D TIs, these include the observation of nonlocal ballistic and…
The search for large band gap systems with dissipationless edge states is essential to developing materials that function under a wide range of temperatures. Two-dimensional (2D) topological insulators (TIs) have recently attracted…
In this report, we scrutinize the thickness dependent resistivity data from the recent literature on electrical transport measurements in topological insulators. A linear increase in resistivity with increase in thickness is expected in the…
The theoretical analysis of topological insulators (TIs) has been traditionally focused on infinite homogeneous crystals with band gap in the bulk and nontrivial topology of their wavefunctions, or infinite wires whose boundaries host…