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Flexible and transparent electronics presents a new era of electronic technologies. Ubiquitous applications involve wearable electronics, biosensors, flexible transparent displays, radio-frequency identifications (RFIDs), etc.Zinc oxide…

介观与纳米尺度物理 · 物理学 2017-02-21 Zhang Yong-Hui , Mei Zeng-Xia , Liang Hui-Li , Du Xiao-Long

Metal oxide thin-film transistors are fast becoming a ubiquitous technology for application in driving backplanes of organic light-emitting diode displays. Currently all commercial products rely on metal oxides processed via physical vapor…

Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical…

Thin film transistors (TFTs) made of transparent channel semiconductors such as ZnO are of great technological importance, because their insensitivity to visible light makes device structures simple. In fact, several demonstrations are made…

凝聚态物理 · 物理学 2009-11-10 Faruque M. Hossain , J. Nishii , S. Takagi , A. Ohtomo , T. Fukumura , H. Fujioka , H. Ohno , H. Koinuma , M. Kawasaki

The development of high-performance multifunctional polymer-based electronic circuits is a major step towards future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed…

The class of transparent conductive oxides includes the material indium tin oxide (ITO) and has become a widely used material of modern every-day life such as in touch screens of smart phones and watches, but also used as an optically…

In this paper, we investigated the performance of thin-film transistors (TFTs) with different channel configurations including single-active-layer (SAL) Sn-Zn-O (TZO), dual-active-layers (DAL) In-Sn-O (ITO)/TZO, and triple-active-layers…

应用物理 · 物理学 2019-08-28 Zhuofa Chen , Dedong Han , Xing Zhang , Yi Wang

Combining high-throughput experiments with machine learning allows quick optimization of parameter spaces towards achieving target properties. In this study, we demonstrate that machine learning, combined with multi-labeled datasets, can…

Recent advances in high-throughput experimentation for combinatorial studies have accelerated the discovery and analysis of materials across a wide range of compositions and synthesis conditions. However, many of the more powerful…

Thin film oxides are a source of endless fascination for the materials scientist. These materials are highly flexible, can be integrated into almost limitless combinations, and exhibit many useful functionalities for device applications.…

材料科学 · 物理学 2025-06-17 Steven R. Spurgeon

Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco-friendly, streamlined method for preparing…

High-performance solution-processed short-channel carbon nanotube (CNT) thin film transistors (TFTs) are fabricated using densely aligned arrays of metallic CNTs (m-CNTs) as source and drain electrodes, and aligned arrays of semiconducting…

介观与纳米尺度物理 · 物理学 2015-06-18 Biddut K. Sarker , Narae Kang , Saiful I. Khondaker

This study demonstrates 3D monolithic integration of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) on Gallium Nitride (GaN) high electron mobility transistors (HEMTs) in a cascode configuration, achieving high…

应用物理 · 物理学 2025-07-11 Tian-Li Wu , Hsin-Jou Ho , Chia-Wei Liu , Yi-Chen Chen

Amorphous oxide semiconductors are gaining interest for logic and memory transistors compatible with low-temperature fabrication. However, their low thermal conductivity and heterogeneous interfaces suggest that their performance may be…

The electron velocity-electric field characteristics in short channel length (50-100 nm) amorphous oxide field-effect transistors (FETs) are described using measured experimental data from indium gallium zinc oxide (IGZO) FETs in…

材料科学 · 物理学 2026-04-24 Chankeun Yoon , Xiao Wang , Jatin Vikram Singh , Sanjay K. Banerjee , Ananth Dodabalapur

We reported here a high-performance In2O3/InZnO bilayer metal-oxide (BMO) thin-film transistor (TFT) using ultra-thin solution-processed ZrOx dielectric. A thin layer of In2O3 offers a higher carrier concentration, thereby maximizing the…

材料科学 · 物理学 2014-05-27 F. K. Shan , A. Liu , G. X. Liu , Y. Meng , B. C. Shin , E. Fortunato , R. Martins

High-throughput materials synthesis methods have risen in popularity due to their potential to accelerate the design and discovery of novel functional materials, such as solution-processed semiconductors. After synthesis, key material…

图像与视频处理 · 电气工程与系统科学 2024-06-17 Alexander E. Siemenn , Eunice Aissi , Fang Sheng , Armi Tiihonen , Hamide Kavak , Basita Das , Tonio Buonassisi

Fermi-level pinning (FLP) effect was widely observed in thin-film transistors (TFTs) with van der Waals (vdW) layered semiconductors (organic or two-dimensional) when contact electrodes were thermally evaporated1-3. Intensive investigation…

应用物理 · 物理学 2023-06-27 Zhiyun Wu , Shuiren Liu , Juzhong Zhang , Hanyu Jia , Qingqing Sun , Xiaoguang Hu , Lingxian Meng , Xuying Liu

A printing process for high-resolution transfer of all components for organic electronic devices on plastic substrates has been developed and demonstrated for pentacene (Pn), poly (3-hexylthiophene) and carbon nanotube (CNT) thin-film…

This work reports a pulsed laser-assisted synthesis, detailed structural characterization, and study of plasmonic properties of three sets of TiN/TiNO thin films with high electron density. The first two sets of TiN films were grown at 600C…

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