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相关论文: Robust magnetotransport in disordered ferromagneti…

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Inspired by the observation of the extremely large anomalous Hall effect in the absence of applied magnetic fields or uniform magnetization in CoNb$_3$S$_6$ [Nature Comm. 9, 3280 (2018); Phys. Rev. Research 2, 023051 (2020)], we perform a…

材料科学 · 物理学 2023-07-31 Hyowon Park , Olle Heinonen , Ivar Martin

In [B. Binz, A. Vishwanath and V. Aji, Phys. Rev. Lett. 96, 207202 (2006)], a magnetic structure that breaks time reversal symmetry in the absence of net magnetization was proposed as an explanation for the high pressure "partially ordered"…

强关联电子 · 物理学 2009-11-11 B. Binz , A. Vishwanath

The periodic response of magnetoresistance to an externally tunable parameter, such as magnetic field or chemical composition, in the bulk or an artificially designed material has been exploited for technological applications as well as to…

材料科学 · 物理学 2012-09-04 S. Dickert , D. K. Singh , R. Thantirige , M. T. Tuominen

Kagome materials are known to be an ideal platform that hosts a plethora of interesting phases such as topological states, electronic correlation, and magnetism, owing to their unique band structure and geometry. We report magnetotransport…

强关联电子 · 物理学 2024-11-01 Zhiyuan Cheng , Yaojia Wang , Heng Wu , Mazhar N. Ali , Julia Y. Chan , Semonti Bhattacharyya

We show that nano-scale variations of the order parameter in strongly-correlated systems can induce local spatial regions such as domain walls that exhibit electronic properties representative of a different, but nearby, part of the phase…

强关联电子 · 物理学 2009-11-10 M. S. Rzchowski , Robert Joynt

The interplay between magnetism and strong electron correlation in magnetic materials discerns a variety of intriguing topological features. Here, we report a systematic investigation of the magnetic, thermodynamic, and electrical transport…

介观与纳米尺度物理 · 物理学 2024-09-11 Anyesh Saraswati , Sudipta Chatterjee , Nitesh Kumar

In recent years, layered kagome magnets have emerged as promising platforms for Berry-curvature engineering and unconventional transport phenomena. Here, we present the single-crystal growth, magnetization, and electrical transport…

材料科学 · 物理学 2026-04-24 Shobha Singh , Shivam Rathod , Rong chen , Lipika , Sneh , Rie Y. Umetsu , Yan Sun , Kaustuv Manna

We report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure exact quantization in Hall resistance to within a part per…

介观与纳米尺度物理 · 物理学 2015-05-13 A. J. Bestwick , E. J. Fox , Xufeng Kou , Lei Pan , Kang L. Wang , D. Goldhaber-Gordon

The anomalous Hall effect (AHE) has been studied systematically in the low-conductivity ferromagnetic oxide Fe$_{3-x}$Zn$_x$O$_4$ with $x = 0$, 0.1, and 0.5. We used (001), (110), and (111) oriented epitaxial Fe$_{3-x}$Zn$_x$O$_4$ films…

Synthesis of crystallographically well-defined thin films of topological materials is important for unraveling their mesoscale quantum properties and for device applications. Mn$_3$Ge, an antiferromagnetic Weyl semimetal with a chiral…

The anomalous Hall effect (AHE) is a well-known fundamental property of ferromagnetic metals, commonly associated with the presence of a net magnetization. Recently, an AHE has been discovered in non-collinear antiferromagnetic (AFM)…

材料科学 · 物理学 2019-04-25 Gautam Gurung , Ding-Fu Shao , Tula R. Paudel , Evgeny Y. Tsymbal

The quantum anomalous Hall effect in layered antiferromagnet MnBi$_2$Te$_4$ harbors a rich interplay between magnetism and topology, holding a significant promise for low-power electronic devices and topological antiferromagnetic…

In this account, we will give an overview of our research progress on novel quantum properties in topological quantum materials with kagome lattice. Here, there are mainly two categories of kagome materials: magnetic kagome materials and…

超导电性 · 物理学 2024-09-09 Qi Wang , Hechang Lei , Yanpeng Qi , Claudia Felser

The anomalous Hall and Nernst effects describe the voltage drop perpendicular to an applied current and temperature gradient due to the magnetization of a magnetic material. These effects can be utilized to measure the Berry curvature at…

强关联电子 · 物理学 2024-02-01 Longfei Li , Shuyue Guan , Shengwei Chi , Jiawei Li , Xinxuan Lin , Gang Xu , Shuang Jia

Progress in magnetoelectric materials is hindered by apparently contradictory requirements for time-reversal symmetry broken and polar ferroelectric electronic structure in common ferromagnets and antiferromagnets. Alternative routes could…

We present a model for a negative magnetoresistance (MR) that would develop in a material with many ferromagnetic domains even if the individual domains have no magnetoresistance and even if there is no boundary resistance. The negative MR…

材料科学 · 物理学 2009-11-07 Sergey V. Barabash , D. Stroud

It is well known that the intrinsic anomalous Hall effect (AHE) arises from the integration of the non-zero Berry curvature (BC), conventionally observed in the Dirac/Weyl and nodal-line semimetals. Moreover, nodal surface semimetals are…

介观与纳米尺度物理 · 物理学 2025-01-28 Shu-Xiang Li , Wencheng Wang , Sheng Xu , Tianhao Li , Zheng Li , Jinjin Wang , Jun-Jian Mi , Qian Tao , Feng Tang , Xiangang Wan , Zhu-An Xu

We propose a model ferromagnet based on the Dirac Hamiltonian in three spatial dimensions, and study its transport properties which include anisotropic magnetoresistance (AMR) and anomalous Hall (AH) effect. This relativistic extension…

材料科学 · 物理学 2015-06-19 Junji Fujimoto , Hiroshi Kohno

Topological materials have recently attracted considerable attention among materials scientists as their properties are predicted to be protected against perturbations such as lattice distortion and chemical substitution. However, any…

As one of the most fundamental physical phenomena, the anomalous Hall effect (AHE) typically occurs in ferromagnetic materials but is not expected in the conventional superconductors. Here, we have observed a giant AHE in kagome…

强关联电子 · 物理学 2021-07-14 F. H. Yu , T. Wu , Z. Y. Wang , B. Lei , W. Z. Zhuo , J. J. Ying , X. H. Chen