相关论文: A Nanomagnetic Voltage-Tunable Correlation Generat…
Single flux quantum (SFQ) circuits form a natural neuromorphic technology with SFQ pulses and superconducting transmission lines simulating action potentials and axons, respectively. Here we present a new component, magnetic Josephson…
Thermally-induced transitions between bistable magnetic states of magnetic tunnel junctions (MTJ) are of interest for generating random bitstreams and for applications in stochastic computing. An applied field transverse to the easy axis of…
Binarized Neural Networks, a recently discovered class of neural networks with minimal memory requirements and no reliance on multiplication, are a fantastic opportunity for the realization of compact and energy efficient inference…
Physics-inspired computing paradigms, such as Ising machines, are emerging as promising hardware alternatives to traditional von Neumann architectures for tackling computationally intensive combinatorial optimization problems (COPs). While…
The cryptographic security provided by various techniques of random number generator (RNG) construction is one of the developing researches areas today. Among various types of RNG, the true random bit generator (TRBG) can be considered as…
The use of analog resistance states for storing weights in neuromorphic systems is impeded by fabrication imprecision and device stochasticity that limit the precision of synapse weights. This challenge can be resolved by emulating analog…
Straintronic magneto-tunneling junction (s-MTJ) switches, whose resistances are controlled with voltage-generated strain in the magnetostrictive free layer of the MTJ, are extremely energy-efficient switches that would dissipate a few aJ of…
Stochasticity is ubiquitous in the world around us. However, our predominant computing paradigm is deterministic. Random number generation (RNG) can be a computationally inefficient operation in this system especially for larger workloads.…
Binary stochastic neurons (BSNs) are excellent activators for machine learning. An ideal platform for implementing them are low- or zero-energy-barrier nanomagnets (LBMs) possessing in-plane anisotropy (e.g. circular or slightly elliptical…
The tuning of sensitivity and dynamic range in linear magnetic sensors is required in various applications. We demonstrate the control and design of the sensitivity in magnetic tunnel junction (MTJ) sensors with a vortex-type sensing layer.…
Solid state ionic conductors are good candidates for the next generation of nonvolatile computer memory elements. Such devices have to show reproducible resistance switching at reasonable voltage and current values even if scaled down to…
Non-linear dynamics, including auto-oscillations, chaotic dynamics, and synchronization, are integral to physical and biological applications and can be excited in spintronic devices. In this study, we are interested in exploring the…
Efficient generation of spin currents from charge currents is of high importance for memory and logic applications of spintronics. In particular, generation of spin currents from charge currents in high spin-orbit coupling metals has the…
We calculate the conductances and the tunneling magnetoresistance (TMR) of double magnetic tunnel junctions, taking as a model example junctions composed of Fe/ZnSe/Fe/ZnSe/Fe (001). The calculations are done as a function of the gate…
Random assemblies of magnetic nanowires represent a unique class of materials with promising applications in spintronics and information storage. These assemblies exhibit complex behavior due to the combination of magnetic dipolar…
Magnetic tunnel junctions (MTJs), composed of two ferromagnetic electrodes separated by a thin insulating barrier layer, are currently used in spintronic devices, such as magnetic sensors and magnetic random access memories. Recently,…
Spintronic devices have recently attracted a lot of attention in the field of unconventional computing due to their non-volatility for short and long term memory, non-linear fast response and relatively small footprint. Here we report how…
The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two…
In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR)…
We predict an anomalous bias dependence of the spin transfer torque parallel to interface, $T_{||}$, in magnetic tunnel junctions (MTJ), which can be selectively tuned by the exchange splitting. It may exhibit a sign reversal {\it without}…