相关论文: Modeling the computer memory based on the ferromag…

The combination of superconducting and magnetic materials to create novel superconducting devices has been motivated by the discovery of Josephson critical current (Ics) oscillations as a function of magnetic layer thickness and the…

Stochastic spiking neural networks based on nanoelectronic spin devices can be a possible pathway to achieving "brainlike" compact and energy-effcient cognitive intelligence. The computational model attempt to exploit the intrinsic device…

Memristor-based Spiking Neural Networks (SNNs) with temporal spike encoding enable ultra-low-energy computation, making them ideal for battery-powered intelligent devices. This paper presents a circuit-level memristive spiking neural…

Current-driven switching of nonvolatile spintronic materials and devices based on spin-orbit torques offer fast data processing speed, low power consumption, and unlimited endurance for future information processing applications. Analogous…

As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is critical to analyze the magnetic tunnel junction (MTJ)…

In quantum computing architectures, one important factor is the trade-off between the need to couple qubits to each other and to an external drive and the need to isolate them well enough in order to protect the information for an extended…

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets that represent the more common form of magnetically ordered materials, have so far found less practical application beyond their use for…

Superconductor electronics (SCE) is competing to become a platform for efficient implementations of neuromorphic computing and deep learning algorithms (DLAs) with projects mostly concentrating on searching for gates that would better mimic…

The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape…

Microwave storage and retrieval are essential capabilities for superconducting quantum circuits. Here, we demonstrate an on-chip multimode resonator in which strong parametric modulation induces a large and tunable normal-mode splitting…

The exponential growth of edge artificial intelligence demands material-focused solutions to overcome energy consumption and latency limitations when processing real-time temporal data. Physical reservoir computing (PRC) offers an…

Superparamagnetic tunnel junctions (sMTJs) are emerging as promising components for stochastic units in neuromorphic computing, owing to their tunable random switching behavior. Conventional MTJ control methods, such as spin-transfer torque…

We present a design-scheme for ultra-low power neuromorphic hardware using emerging spin-devices. We propose device models for 'neuron', based on lateral spin valves and domain wall magnets that can operate at ultra-low terminal voltage of…

Comprehensive understanding of the world's most energy efficient powerful computer, the human brain, is an elusive scientific issue. Still, already gained knowledge indicates memristors can be used as a building block to model the brain. At…

The escalating energy demands of artificial intelligence pose a critical challenge to conventional computing. Leveraging the efficiency of event-driven, in-memory neuromorphic architectures into the superconducting circuits with ultra-high…

Scalable, low-dissipation memory operating below 4 K is a critical requirement for superconducting and quantum computing systems. Existing cryogenic memory technologies rely on CMOS derivatives or hybrid architectures that incur leakage,…

The mechanism of resistive switching in two-dimensional (2D) semiconductor-based memristors is intriguing, and our conventional knowledge of bulk-oxide based memristors does not apply to these devices. Experimental data indicate that the…

We present the design and numerical simulation of a spiking neuron capable of on-chip machine learning. Built within the CMOS+X framework, the spiking neuron consists of an NMOS transistor combined with a magnetic tunnel junction (MTJ).…

We have measured the transition process from the high to low resistivity states, i.e., the reset process of resistive switching based memristors based on Ni/HfO2/Si-n+ structures, and have also developed an analytical model for their…

Memristive switching devices, candidates for resistive random access memory technology, have been shown to switch off through a progression of states with quantized conductance and subsequent non-integer conductance (in terms of conductance…