相关论文: Modeling the computer memory based on the ferromag…
Technology based on memristors, resistors with memory whose resistance depends on the history of the crossing charges, has lately enhanced the classical paradigm of computation with neuromorphic architectures. However, in contrast to the…
Spin and charge are the two most important degrees of freedom of electrons. Their interplay lies at the heart of numerous strongly correlated phenomena including Hubbard model physics and high temperature superconductivity. Such interplay…
A large effort is devoted to the research of new computing paradigms associated to innovative nanotechnologies that should complement and/or propose alternative solutions to the classical Von Neumann/CMOS association. Among various…
Utilizing optimal control to simulate a model Hamiltonian is an emerging strategy that leverages the intrinsic physics of a device with digital quantum simulation methods. Here we evaluate optimal control for probing the non-equilibrium…
A novel scheme for non-volatile digital computation is proposed using spin-transfer torque (STT) and automotion of magnetic domain walls (DWs). The basic computing element is composed of a lateral spin valve (SV) with two ferromagnetic (FM)…
We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…
Stochastic magnetic tunnel junctions (s-MTJ) is a promising component of probabilistic bit (p-bit), which plays a pivotal role in probabilistic computers. For a standard cell structure of the p-bit, s-MTJ is desired to be insensitive to…
Memristors have demonstrated immense potential as building blocks in future adaptive neuromorphic architectures. Recently, there has been focus on emulating specific synaptic functions of the mammalian nervous system by either tailoring the…
Hierarchical temporal memory (HTM) is a biomimetic sequence memory algorithm that holds promise for invariant representations of spatial and spatiotemporal inputs. This paper presents a comprehensive neuromemristive crossbar architecture…
Antiferromagnetic Tunnel Junctions (AFMTJs) offer picosecond switching and high integration density for in-memory computing, but their ultrafast dynamics and low tunnel magnetoresistance (TMR) make state-of-the-art MRAM interfaces…
Optical communication achieves high fanout and short delay advantageous for information integration in neural systems. Superconducting detectors enable signaling with single photons for maximal energy efficiency. We present designs of…
A novel high-fan-in differential superconductor neuron structure designed for ultra-high-performance Spiking Neural Network (SNN) accelerators is presented. Utilizing a high-fan-in neuron structure allows us to design SNN accelerators with…
When fabricating magnetic memories, one of the main challenges is to maintain the bit stability while downscaling. Indeed, for magnetic volumes of a few thousand nm3, the energy barrier between magnetic configurations becomes comparable to…
Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…
A noticeable magnetoresistive effect has been observed on ferromagnet/superconductor/ferromagnet (FSF) microbridges based on diluted ferromagnetic PdFe alloy containing as small as 1% magnetic atoms. Microstructuring of the FSF trilayers…
Single-molecule magnets weakly coupled to two ferromagnetic leads act as memory devices in electronic circuits---their response depends on history, not just on the instantaneous applied voltage. We show that magnetic anisotropy introduces a…
Superconductor electronics (SCE) appear promising for low energy applications. However, the achieved and projected circuit densities are insufficient for direct competition with CMOS technology. Original algorithms and nontraditional…
With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…
Superconducting optoelectronic loop neurons are a class of circuits potentially conducive to networks for large-scale artificial cognition. These circuits employ superconducting components including single-photon detectors, Josephson…
Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory…