相关论文: Valley Acoustoelectric Effect
The Letter reports an experimental observation of the classical version of valley polarized states in a two-dimensional hexagonal sonic crystal, where the inversion-symmetry breaking of scatterers induces an omnidirectional frequency gap.…
In monolayer group-VI transition metal dichalcogenides (TMDC), charge carriers have spin and valley degrees of freedom, both associated with magnetic moments. On the other hand, the layer degree of freedom in multilayers is associated with…
Utilizing spin or valley degree of freedom is one of the promising approaches to realize more energy-efficient information processing. In the 2D transition metal dichalcogenide, the spin/valley current can be generated by utilizing the…
The electric and chiral current response to the time- and coordinate-dependent pseudoelectric field $\mathbf{E}_5$ in Weyl semimetals is studied. It is found that $\mathbf{E}_5$ leads to an electric current in the direction perpendicular to…
Modulation of electronic states in two-dimensional (2D) materials can be achieved by using in-plane variations of the band gap or the average potential in lateral quantum structures. In the atomic configurations with hexagonal symmetry,…
We study electron transport in two-dimensional materials with parabolic and linear (graphene) dispersions of the carriers in the presence of surface acoustic waves and an external magnetic field using semiclassical Boltzmann equations…
We present a theory of the photovoltaic valley-dependent Hall effect in a two-dimensional Dirac semiconductor subject to an intense near-resonant electromagnetic field. Our theory captures and elucidates the influence of both the…
Local energy extrema of the bands in momentum space, or valleys, can endow electrons in solids with pseudo-spin in addition to real spin. In transition metal dichalcogenides this valley pseudo-spin, like real spin, is associated with a…
The discovery of the integer quantum Hall effect in the early eighties of the last century, with highly precise quantization values for the Hall conductance in multiples of $e^2/h$, has been the first fascinating manifestation of the…
Valleytronics is one of the breaking-through to the technology of electronics, which provides a new degree of freedom to manipulate the properties of electrons. Combining DFT calculations, optical absorption analysis and the linear…
We develop a theory of circular photogalvanic effect in non-gyrotropic two-dimensional transition metal dichalcogenide monolayers under interband optical transitions. Oblique incidence of circularly-polarized electromagnetic field or normal…
The antiferromagnetic (AFM) materials are distinguished by zero net magnetic moment, high resistance to external magnetic disturbances, and ultrafast dynamic responses. For advancing AFM materials in spintronic and valleytronic…
The valley Hall effect (VHE) holds great promise for valleytronic applications by leveraging the valley degree of freedom. To date, research on VHE has focused on its linear response to an applied current, leaving nonlinear valley responses…
In monolayer hexagonal lattices, two inequivalent valleys appear in the Brillouin zone. With inversion symmetry breaking, we find chiral phonons with valley contrasting circular polarization and ionic magnetic moment. At valley centers,…
We propose and analyze a mechanism for inducing spin Hall currents in ordinary (1H phase) monolayer transition metal dichalcogenides (TMDs) due to the nonlinear process of optical rectification. The photo-induced spin current is…
We compute the valley/magnetic phase diagram of mono layers of transition metal dichalcogenides in the hole doped region where spin-orbit effects are particularly relevant. Taking into account the moderate to high local electron-electron…
The valley Chern-effect is theoretically demonstrated with a novel alternating current circuitry, where closed-loop LC-resonators sitting at the nodes of a honeycomb lattice are inductively coupled along the bonds. This enables us to…
The valley degree of freedom in many-valley semiconductors provides a new paradigm for storing and processing information in valleytronic and quantum-computing applications. Achieving practical devices require all-electric control of…
We show that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls of spin and valley in these 2D materials.…
Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-equivalent points of the reciprocal space. In single layers…