相关论文: A Critical Review of Recent Progress on Negative C…
An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF…
High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant HfO2 films as gate insulators, and electrostatically doped…
We have decomposed the modeling of the field-effect transistors into the two independent parts: the current continuity based kinetics and the charge neutrality based electrostatics. The former part, that is universal for all FETs, leads to…
The continuous miniaturisation of metal-oxide-semiconductor field-effect transistors (MOSFETs) from long- to short-channel architectures has advanced beyond the predictions of Moore's Law. Continued advances in semiconductor electronics,…
Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by…
In semiconductor electronics, the field-effect refers to the control of electrical conductivity in nanoscale devices, which underpins the field-effect transistor, one of the cornerstones of present-day semiconductor technology. The effect…
Negative differential conductivity (NDC) is a widely exploited effect in modern electronic components. Here, a proof-of-principle is given for the observation of NDC in a quantum transport device for neutral atoms employing a multi-mode…
We develop theoretical arguments that demonstrate the possibility of metallic field-effect transistors (METFET's) in one-dimensional systems and particularly in armchair carbon nanotubes. A very inhomogeneous electric field, such as the…
High performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively. Ohmic contacts made to…
In this work, we investigate the transport phenomena in compound semiconductor material based buried channel Quantum Well MOSFET with a view to developing a simple and effective model for the device current. Device simulation has been…
The development of next generation medicines demand more sensitive and reliable label free sensing able to cope with increasing needs of multiplexing and shorter times to results. Field effect transistor-based biosensors emerge as one of…
With decreasing device dimensions, the performance of carbon nanotube field-effect transistors (CNFETs) is limited by high Off currents except at low drain voltages. We show that an asymmetric design improves the performance, reducing Off…
Correlated electron systems are among the centerpieces of modern condensed matter sciences, where many interesting physical phenomena, such as metal-insulator transition and high-Tc superconductivity appear. Recent efforts have been focused…
A new DC thermal model of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model is based on a number of fitting parameters depending on bias conditions by third order polynomials. The model includes three thermal…
Large-scale quantum computing requires cryogenic electronic controllers such as control/readout circuit and routing circuit. However, current technologies face high power dissipation problems, hindering large-scale qubit integration. Here,…
Carbon nanotube field-effect transistors (CNFETs) are promising candidates for building energy-efficient digital systems at highly-scaled technology nodes. However, carbon nanotubes (CNTs) are inherently subject to variations that reduce…
A vertical partial gate carbon nanotube (CNT) field-effect transistor (FET), which is amenable to the vertical CNT growth process and offers the potential for a parallel CNT array channel, is simulated using a self-consistent atomistic…
In this chapter we intend to discuss the major trends in the evolution of microelectronics and its eventual transition to nanoelectronics. As it is well known, there is a continuous exponential tendency of microelectronics towards…
Physical phenomena underlying operation of ferroelectric field-effect transistors (FeFETs) is treated within a unified simulation framework. The framework incorporates the Landau mean-field treatment of free energy of a ferroelectric and…
We propose, theoretically, a new type of quantum field effect transistor that operates purely on the flow of spin current in the absence of charge current. This spin field effect transistor (SFET) is constructed without any magnetic…