相关论文: Laser slicing: a thin film lift-off method for GaN…

The high cost of single crystal III-V substrates limits the use of GaAs and related sphalerite III-V materials in many applications, especially photovoltaics. Separating epitaxially-grown layers from a growth substrate can reduce costs,…

While vertical GaN-on-silicon architectures promise a transformative leap in cost-effective power electronics and high-resolution micro-LEDs, their deployment remains bottlenecked by the high electrical resistance of conventional epitaxial…

The light output of deep ultraviolet (UV-C) AlGaN light-emitting diodes (LEDs) is limited due to their poor light extraction efficiency (LEE). To improve the LEE of AlGaN LEDs, we developed a fabrication technology to process AlGaN LEDs…

Gallium nitride (GaN), as a promising alternative semiconductor to silicon, is of well-established use in photoelectronic and electronic technology. However, the vulnerable GaN surface has been a critical restriction that hinders the…

Low-defect-density Ge thin films are critical in Ge based optical devices (optical detectors, LEDs and Lasers) integrated with Si electronic devices for low-cost, highly integrated photonic circuits. In this work, Ge thin films prepared by…

GaAs-(111)-nanostructures exhibiting second harmonic generation are new building blocks in nonlinear optics. Such structures can be fabricated through epitaxial lift-off employing selective etching of Al-containing layers and subsequent…

Selective thin-film removal is needed in many microfabrication processes such as 3-D patterning of optoelectronic devices and localized repairing of integrated circuits. Various wet or dry etching methods are available, but laser machining…

High-efficiency micro-light-emitting diodes (Micro-LEDs) are key devices for next-generation display technology. However, when the mesa size is reduced to around tens of micrometers or less, the luminous efficiency is constrained by the…

Cracking of thick GaN films on sapphire substrates during the cooling down after the growth was studied. The cracking was suppressed by increasing the film-to-substrate thickness ratio and by using an intermediate carbon buffer layer, that…

We report the growth of high-quality GaN epitaxial thin films on graphene-coated c-sapphire substrates using pulsed-mode metalorganic vapor-phase epitaxy, together with the fabrication of freestanding GaN films by simple mechanical…

Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 micron has been demonstrated at room temperature. We have reported the stimulated emission under the above bandgap excitation from Er doped GaN…

The technique of laser-assisted nanoimprinting lithography (LAN) has been proposed to utilize an excimer laser to irradiate through a quartz mold and melts a thin polymer film on the substrate for micro- to nano-scaled fabrications. In the…

We report the successful fabrication of superconducting tantalum nitride (TaN) thin films using a pulsed laser deposition technique with 1064 nm radiation. Films with thickness $ \sim $ 100 nm deposited on MgO (100) single crystals and on…

An in situ study of the epitaxial growth of SmN thin films on Ga-polar GaN (0001)templates by molecular beam epitaxy is reported. Using X-ray photoelectron spectroscopy we found that Ga segregates at the surface during the first stages of…

We demonstrate a facile fabrication technique for graphene-based transparent conductive films. Highly flat and uniform graphene films are obtained through the incorporation of an efficient laser annealing technique with one-time drop…

We report epitaxial growth and characterization of GaN thin films on sapphire (0001) substrates using low temperature GaN intermediate layer by plasma assisted molecular beam epitaxy (PA-MBE) technique. As grown and annealed GaN thin films…

Femtosecond laser, owing to their ultrafast time scales and broad frequency bandwidths, have substantially changed fundamental science over the past decades, from chemistry and bio-imaging to quantum physics. Critically, many emerging…

We present an innovative method of selective epitaxial growth of few layers graphene (FLG) on a pre-patterned SiC substrate. The methods involves, successively, the sputtering of a thin AlN layer on top of a mono-crystalline SiC substrate…

Ultrashort pulsed laser annealing is an efficient technique for crystallizing amorphous semiconductors with the possibility to obtain polycrystalline films at low temperatures, below the melting point, through non-thermal processes. Here, a…

Efficient thermal management is essential for the reliability of modern power electronics, where increasing device density leads to severe heat dissipation challenges. However, in thin-film systems, thermal transport is often compromised by…