厚GaN薄膜应力诱导自剥离
材料科学
2019-03-06 v2
摘要
研究了在蓝宝石衬底上生长的厚GaN薄膜在冷却过程中的开裂现象。通过增加薄膜与衬底的厚度比以及使用中间碳缓冲层（降低了GaN薄膜与衬底之间的结合能），抑制了开裂。展示了厚GaN薄膜的晶圆级自剥离。
引用
@article{arxiv.1902.03463,
title = {Thick GaN film stress-induced self-separation},
author = {Vladislav Voronenkov and Andrey Leonidov and Yuri Lelikov and Andrey Zubrilov and Yuri Shreter},
journal= {arXiv preprint arXiv:1902.03463},
year = {2019}
}
备注
Published in Proceedings of the 2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus)