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Transient reflectivity spectroscopy is widely used to study ultrafast carrier- and phonon-dynamics in semiconductors. In their heterostructures, it is often not straightforward to distinguish contributions to the signal from the various…

介观与纳米尺度物理 · 物理学 2022-02-09 Kunie Ishioka , Ethan Angerhoffer , Christopher J. Stanton , Gerson Mette , Kerstin Volz , Wolfgang Stolz , Ulrich Höfer

We report on the intrinsic optical generation and detection of coherent acoustic phonons at (001)-oriented bulk Si and GaP without metallic phonon transducer structures. Photoexcitation by a 3.1-eV laser pulse generates a normal strain…

材料科学 · 物理学 2017-07-31 Kunie Ishioka , Avinash Rustagi , Ulrich Hoefer , Hrvoje Petek , Christopher J. Stanton

We report on the optical generation and detection of ultrashort acoustic pulses that propagate in three-dimensional semiconductor crystals. Photoexcitaiton of lattice-matched GaP layers grown on Si(001) gives rise to a sharp spike in…

Lattice-matched GaP layers without extended defects can be grown on Si(001) substrate via a two-step growth procedure, consisting of low-temperature nucleation followed by high-temperature overgrowth. A transient reflectivity experiment on…

Ultrafast carrier and phonon dynamics at the buried heterointerface of GaP/Si(001) are investigated by means of two-color pump-probe reflectivity measurements. The carrier-induced reflectivity signal exhibits a resonant enhancement at…

材料科学 · 物理学 2025-04-15 Gerson Mette , Kunie Ishioka , Steven Youngkin , Wolfgang Stolz , Kerstin Volz , Ulrich Höfer

The coherent modulation of electronic and vibrational nonlinearities in atoms and molecular gases by intense few-cycle pulses has been used for high-harmonic generation in the soft X-ray and attosecond regime, as well as for Raman frequency…

材料科学 · 物理学 2013-09-16 Muneaki Hase , Masayuki Katsuragawa , Anca Monia Constantinescu , Hrvoje Petek

We present a novel and simple picture of the generation dynamics of coherent longitudinal optical (LO) phonons and LO-phonon-plasmon-coupled (LOPC) modes by the ultrafast infrared pump-pulses in gallium arsenide (GaAs) employing the…

材料科学 · 物理学 2024-05-14 Itsuki Takagi , Yuma Konno , Yosuke Kayanuma , Kazutaka G. Nakamura

The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising…

Ultrafast lattice dynamics of few quintuple layers of topological insulator (TI) Bi$_2$Te$_3$ is studied with time-resolved optical pump-probe spectroscopy. Both optical and acoustic phonons are photogenerated and detected. Here, in order…

材料科学 · 物理学 2015-07-09 W. Weiss , K. Balin , R. Rapacz , A. Nowak , J. Szade , M. Lejman , P. Ruello

We show that large amplitude, coherent acoustic phonon wavepackets can be generated and detected in In$_x$Ga$_{1-x}$N/GaN epilayers and heterostructures in femtosecond pump-probe differential reflectivity experiments. The amplitude of the…

介观与纳米尺度物理 · 物理学 2013-05-29 Rongliang Liu , Chang Sub Kim , G. D. Sanders , C. J. Stanton , J. S. Yahng , Y. D. Jho , K. J. Yee , E. Oh , D. S. Kim

Optical second-harmonic generation is demonstrated to be a sensitive probe of the buried interface between the lattice matched semiconductors gallium phosphide and silicon with (001) orientation. Rotational anisotropy measurements of SHG…

介观与纳米尺度物理 · 物理学 2020-10-29 K. Brixius , A. Beyer , J. Güdde , M. Dürr , W. Stolz , K. Volz , U. Höfer

We report on the impulsive generation of coherent optical phonons in CdTe0.68Se0.32 nanocrystallites embedded in a glass matrix. Pump probe experiments using femtosecond laser pulses were performed by tuning the laser central energy to…

介观与纳米尺度物理 · 物理学 2009-11-10 A. V. Bragas , C. Aku-Leh , S. Costantino , Alka Ingale , J. Zhao , R. Merlin

Si-SiO2 multilayer nanocomposite (NCp) films, grown using pulsed laser deposition with varying Si deposition time are investigated using Raman spectroscopy/mapping for studying the variation of Si phonon frequency observed in these NCps.…

介观与纳米尺度物理 · 物理学 2015-03-12 Ekta Rani , Alka A. Ingale , A. Chaturvedi , C. Kamal , D. M. Phase , M. P. Joshi , Aparna Chakrabarti , Arup Banerjee , L. M. Kukreja

The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices. Here we present the first GaP photonic devices on SiO$_2$. The process exploits…

Opto-mechanical oscillators that generate coherent acoustic waves are drawing much interest, in both fundamental research and applications. Narrowband oscillations can be obtained through the introduction of feedback to the acoustic wave.…

光学 · 物理学 2018-11-16 H. Hagai Diamandi , Yosef London , Gil Bashan , Arik Bergman , Avi Zadok

Coherent control experiments using a pair of collinear femtosecond laser pulses have been carried out to manipulate longitudinal optical (LO) phonon-plasmon coupled (LOPC) modes in both p- and n-type GaAs. By tuning the interpulse…

材料科学 · 物理学 2015-05-30 Jianbo Hu , Oleg V. Misochko , Arihiro Goto , Kazutaka G. Nakamura

Gallium phosphide (GaP) is an indirect bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties---including large $\chi^{(2)}$ and $\chi^{(3)}$ coefficients, a high refractive index ($>3$),…

Radio-frequency compressed ultrafast electron diffraction has been used to probe the coherent and incoherent coupling of impulsive electronic excitation at 1.55 eV (800 nm) to optical and acoustic phonon modes directly from the perspective…

There are a large number of atomically thin graphitic films with similar structure to graphene. These films have a spread of bandgaps relating to their ionicity, and also to the substrate on which they are grown. Such films could have a…

介观与纳米尺度物理 · 物理学 2014-04-28 J. P. Hague

Gallium phosphide (GaP) has recently received considerable attention as a suitable material for building photonic integrated circuits due to its remarkable optical and piezoelectric properties. Usually, GaP is grown epitaxially on III-V…

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