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InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) have been proposed to increase the wavefunction overlap and…
High-In-content InGaN quantum wells (QWs) in red light-emitting diodes (LEDs) are typically grown at low temperatures to ensure effective In incorporation. In this study, red LEDs based on bulk InGaN active region were demonstrated. The…
Trench defects in multi-quantum wells (MQWs) have been considered as flawed structures that severely degrade the internal quantum efficiency of light-emitting diodes (LEDs) in the past. In this research, trench defects are innovatively…
We report in this paper electro-optical results on InGaN/GaN based green micro light-emitting diodes ({\mu}LEDs). Current light-voltage measurements reveal that the external quantum efficiency (EQE) behavior versus charge injection does not…
Low internal and external quantum efficiencies in high Aluminium content AlGaN-based deep-ultraviolet light-emitting diode (DUV-LED) occurred due to strong polarization effects, spontaneous and piezoelectric polarization, at the interface…
In this work, performance and characteristics of AlGaN/AlGaN deep-ultraviolet light-emitting diodes (DUV LEDs) with varied number of quantum-well (QW) are investigated numerically. From our simulation, 1-QW structure give the best…
We investigate the impact of quantum well (QW) thickness on efficiency loss in c-plane InGaN/GaN LEDs using a small-signal electroluminescence (SSEL) technique. Multiple mechanisms related to efficiency loss are independently examined,…
In this work the broadening of interband transitions in InGaN/GaN quantum wells (QWs) resulting from structural inhomogeneities is analyzed. The role of polarization-induced electric field in the mechanism behind the inhomogeneous…
InGaAs/GaAsBi/InGaAs quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type II band-edge line-up. Both type I and type II transitions were observed in the Bi containing W QWs and the…
A model including random alloy disorder is used to account for the outstanding optical properties of InGaN quantum wells (QW). The model provides excellent agreement to experimental observations on various structures. This study clarifies…
InGaN/GaN multiple quantum wells (MQWs) have been studied by using cathodoluminescence hyperspectral imaging with high spatial resolution. Variations in peak emission energies and intensities across trench-like features and V-pits on the…
Bandstructure properties in wurtzite quantum wells can change appreciably with changing carrier density because of screening of quantum-confined Stark effect. An approach for incorporating these changes in an InGaN light-emitting-diode…
Indium gallium nitride (InGaN) quantum well (QW) micro- and nanoscale light-emitting diodes (LEDs) are promising for next-generation ultrafast optical interconnects and augmented/virtual reality displays. However, scaling to nanoscale…
Density functional theory simulations were used to obtain physical properties of GaN/AlN system. Combination of these two compounds into multiquantum well (MQW) structure will induce strong electrostatic effect leading to emergence of high…
We present investigations of the optical properties of stacked InGaN quantum dot layers and demonstrate their advantage over single quantum dot layer structures. Measurements were performed on structures containing a single layer with…
Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies (IQEs) than violet, blue, and green InGaN LEDs due to a reduction in radiative recombination rates relative to non-radiative recombination rates as the…
Broadband visible light emitting, three-dimensional hexagonal annular microstructures with InGaN/GaN multiple quantum wells (MQWs) are fabricated via selective-area epitaxial growth. The single hexagonal annular structure is composed of not…
Quantum dot light-emitting diodes (QLEDs) are promising building blocks for prospective lighting and display applications. Despite the significant advancements achieved towards increasing the efficiency and brightness levels of QLEDs, the…
The enhancement of power conversion efficiency beyond the theoretical limit of single-junction solar cells is a key objective in the advancement of hot carrier solar cells. Recent findings indicate that quantum wells (QWs) can effectively…
Optical gain in solution, which provides high photostability as a result of continuous regeneration of the gain medium, is extremely attractive for optoelectronic applications. Here, we propose and demonstrate amplified spontaneous emission…