Low internal and external quantum efficiencies in high Aluminium content AlGaN-based deep-ultraviolet light-emitting diode (DUV-LED) occurred due to strong polarization effects, spontaneous and piezoelectric polarization, at the interface between two materials. It also leads to a low carrier confinement and Quantum Confined Stark Effect (QCSE), contributing to the efficiency droop of the DUV-LED. This work demonstrates an under-level MQW configuration implemented in a DUV-LED with a 257 nm emission wavelength. Three DUV-LED structures, above-, same- and under-level MQW were investigated, covering important optoelectronics properties such as energy band diagram, carrier concentrations, radiative recombination rates and electric field distribution. It is found that the quantum efficiencies, luminescence intensity and light output power of the under-level configuration has been enhanced by nine-, ten- and five-folds, relative to the above-level MQW configuration.
@article{arxiv.2411.15855,
title = {High-Performances AlGaN-based DUV-LED via Under-Level Multiple Quantum Well Configuration},
author = {Mohammad Amirul Hairol Aman and Nurul Fathinah Azrisham and Ahmad Fakhrurrazi Ahmad Noorden and Wan Hazman Danial and Muhamad Zamzuri Abdul Kadir},
journal= {arXiv preprint arXiv:2411.15855},
year = {2024}
}