Shelf-stable quantum-dot light-emitting diodes with high operational performance
Abstract
Quantum-dot light-emitting diodes (QLEDs) promise high-performance and cost-effective electroluminescent devices. However, shelf stability of QLEDs, a must for practical applications, is currently overlooked. Here we reveal that the state-of-the-art QLEDs exhibit abnormal shelf-ageing behaviours, i.e., improvements in performance (positive ageing), followed by deterioration of performance (negative ageing). Mechanism studies show that the organic acids in the encapsulation acrylic resin induce in-situ reactions, which simultaneously improve electrical conductance and minimize interfacial exciton quenching at the positive-ageing stage. Progression of the in-situ reactions results in negative ageing. Inspired by these findings, we design an electron-transporting bi-layer structure, which delivers both improved electrical conductivity and suppressed interfacial exciton quenching. This design enables shelf-stable QLEDs with high operational performance, i.e., neglectable changes of external quantum efficiency (>20.0%) and ultra-long operational lifetime (T95: 5,500 hours at 1,000 cd m-2) after storage for 180 days. Our work paves the way towards the commercialization of QLEDs.
Keywords
Cite
@article{arxiv.2005.10735,
title = {Shelf-stable quantum-dot light-emitting diodes with high operational performance},
author = {Desui Chen and Dong Chen and Xingliang Dai and Zhenxing Zhang and Jian Lin and Yunzhou Deng and Yanlei Hao and Ci Zhang and Haiming Zhu and Feng Gao and Yizheng Jin},
journal= {arXiv preprint arXiv:2005.10735},
year = {2020}
}