相关论文: High-mobility indirect excitons in wide single qua…
Quantum well (QW) structures are widely used in lasers, semiconductor optical amplifiers, modulators, enabling their monolithic integration on the same substrate. As optoelectronic systems evolve to meet the growing bandwidth demands in the…
A simple method to create and control magnetic potentials onto coupled quantum wells is demonstrated for indirect-exciton magnetic confinement. Localized inhomogeneous magnetic potentials with periodically distributed local minima and…
The geometry of quantum wells (QWs) critically influences carrier mobility, yet systematic comparisons between finite and infinite square QWs remain scarce. We present a comprehensive study of GaAs/In$_x$Ga$_{1-x}$As/GaAs heterostructures…
We introduce a computationally efficient approach to calculating the characteristics of excitons in quantum wells. In this approach we derive a system of self-consistent equations describing the motion of an electron-hole pair. The motion…
Using a nonlinear Schr\"odinger equation including short-range two-body attraction and three-body repulsion, we investigate the spatial distribution of indirect excitons in semiconductor coupled quantum wells. The results obtained can…
Excitonic insulators (EI) arise from the formation of bound electron-hole pairs (excitons) in semiconductors and provide a solid-state platform for quantum many-boson physics. Strong exciton-exciton repulsion is expected to stabilize…
The self-trapped state (STS) of interlayer exciton (IX) has been aroused enormous interesting owing to their significant impact on the fundamental properties of the van derWaals heterostructures (vdWHs). Nevertheless, the microscopic…
The hydrodynamic equations for indirect excitons in the double quantum wells are studied taking into account 1) a possibility of an exciton condensed phase formation, 2) the presence of pumping, 3) finite value of the exciton lifetime, 4)…
The ground state energy of exciton bound by distant ionized donor impurity in quasi-two-dimensional GaAs/AlGaAs semiconductor quantum well (QW) is studied theoretically within the Hartree approach in the effective mass approximation. The…
Interactions between out-of-plane dipoles in bosonic gases enable the long-range propagation of excitons. The lack of direct control over collective dipolar properties has hitherto limited the degrees of tunability and the microscopic…
The optical spectra of vertically stacked MoSe$_2$/WSe$_2$ heterostructures contain additional 'interlayer' excitonic peaks that are absent in the individual monolayer materials and exhibit a significant spatial charge separation in…
Electroluminescence properties of epitaxially grown n-ZnO/p-GaN pn-heterojunctions are investigated as functions of applied bias and temperature. The study reveals the existence of indirect interfacial excitons at sufficiently low…
Interlayer excitons (IXs) in 2D semiconductors have long lifetimes and spin-valley coupled physics, with a long-standing goal of single exciton trapping for valleytronic applications. In this work, we use a nano-patterned graphene gate to…
Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum…
Based on \emph{ab initio} theoretical calculations of the optical spectra of vertical heterostructures of MoSe$_2$ (or MoS$_2$) and WSe$_2$ sheets, we reveal two spin-orbit-split Rydberg series of excitonic states below the \textsl{A}…
Electron scattering on both neutral ($X$) and charged ($X^-$) excitons in quantum wells is studied theoretically. A microscopic model is presented, taking into account both elastic and dissociating scattering. The model is based on…
We investigate excitons in stacked transition metal dichalcogenide (TMDC) layers under perpendicularly applied electric field, herein MoSe$_2$/WSe$_2$ van der Waals heterostructures. Band structures are obtained with density functional…
III-nitride wide bandgap semiconductors exhibit large exciton binding energies, preserving strong excitonic effects at room temperature. On the other hand, semiconducting two-dimensional (2D) materials, including MoS$_2$, also exhibit…
Inspired by a recent experiment of localization-delocalization transition (LDT) of indirect excitons in lateral electrostatic lattices [M. Remeika \textit{et al.}, Phys. Rev. Lett. \textbf{102}, 186803 (2009)], we investigate the interplay…
We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well indirect excitons are trapped at the perimeter of a SiO2 area sandwiched…