相关论文: Nanostructured p-p(v) junctions obtained by G-dopi…
We consider electron states in n-p double quantum dots defined in a semiconducting carbon nanotube (CNT) by an external potential. We describe formation of extended single-electron orbitals originating from the conduction and valence bands…
Recent experiments demonstrated that isovalent doping system gives the similar phase diagram as the heterovalent doped cases. For example, with the phosphorous (P)-doping, the magnetic order in BaFe$_{2}$(As$_{1-x}$P$_{x}$)$_{2}$ compound…
We present the findings of the superconductivity observed in the silicon nanostructures prepared by short time diffusion of boron on the n-type Si(100) surface. These Si-based nanostructures represent the p-type ultra-narrow self-assembled…
Due to high density of native defects, the prototypical topological insulator (TI), Bi$_2$Se$_3$, is naturally n-type. Although Bi$_2$Se$_3$ can be converted into p-type by substituting 2+ ions for Bi, only light elements such as Ca have…
Since advanced Silicon-based device components are moderately chemically tunable, doped graphene has emerged as a promising candidate to replace this semiconducting material in flexible miniaturized electronic devices. Indeed, heteroatom…
Despite the lack of reproducible experimental confirmation, group-V elements have been considered as possible sources of p-type doping in ZnO in the form of simple and complex defects. Using ab initio calculations, based on state-of-the-art…
The two-dimensional (2D) Hubbard model is widely believed to contain the key ingredients of high-temperature superconductivity in cuprate materials. Here, we report a constrained path quantum Monte Carlo (CPQMC) study of the square-lattice…
We present the findings of the superconductivity in the silicon nanostructures prepared by short time diffusion of boron after preliminary oxidation of the n-type Si (100) surface. These Si-based nanostructures represent the p-type high…
We study the structural and mechanical properties of nanoporous (NP) carbon materials by extensive atomistic machine-learning (ML) driven molecular dynamics (MD) simulations. To this end, we retrain a ML Gaussian approximation potential…
Doping is considered to be the main method for improving the thermoelectric performance of layered sodium cobaltate (Na$_{1-x}$CoO$_2$). However, in the vast majority of past reports, the equilibrium location of the dopant in the…
The ion-bombardment induced nanopatterning of Si(001) has been simulated by atomistic simulations with and without Fe impurity. The surface contamination has been simulated by using a new force field developed for FeSi. This is a fitted…
Graphene monolayer is a material with zero band gap, because of which its applications in optoelectronics are limited. The question arises, can we modify the optoelectronic properties of graphene by doping it with other atoms? Synthesis of…
When a quantum mechanical system undergoes an adiabatic cyclic evolution it acquires a geometrical phase factor in addition to the dynamical one. This effect has been demonstrated in a variety of microscopic systems. Advances in…
Nano--metal/semiconductor junction dependent porosification of silicon (Si) has been studied here. The silicon (Si) nanostructures (NS) have been textured on n-- and p-- type silicon wafers using Ag and Au metal nano particles induced…
The photogalvanic effect (PGE), a fundamental nonlinear optical phenomenon in non-centrosymmetric materials, generates direct photocurrent under polarized light. Using quantum kinetic theory within the relaxation-time approximation, we…
Effect of doping of graphene either by Boron (B), Nitrogen (N) or co-doped by B and N is studied using density functional theory. Our extensive band structure and density of states calculations indicate that upon doping by N (electron…
The superconducting proximity effect induces pairing correlations in metallic systems via Andreev scattering. This effect is particularly intriguing in graphene, as it enables two-dimensional superconductivity that is tunable through…
We provide a theoretical study of the conductance response of systems based on graphene nanoribbon to the potential of a scanning probe. The study is based on the Landauer approach for the tight-binding Hamiltonian with an implementation of…
We present a systematic study of various ways (top gates, local doping, substrate bias) to fabricate and tune multi-dot structures in silicon nanowire multigate MOSFETs (metal-oxide-semiconductor field-effect transistors). The carrier…
Doping plays a key role in functionalizing semiconductor devices, yet traditional chemical approaches relying on foreign-atom incorporation suffer from doping-asymmetry, pronounced lattice disorder and constrained spatial resolution. Here,…