相关论文: Nanostructured p-p(v) junctions obtained by G-dopi…
Narrow bandgap and its tuning are important aspects of materials for their technological applications. In this context group IV VI semiconductors are one of the interesting candidates. In this paper, we explore the possibility of bandgap…
We demonstrate simultaneous quantisation of conduction band (CB) and valence band (VB) states in silicon using ultra-shallow, high density, phosphorus doping profiles (so-called Si:P $\delta$-layers). We show that, in addition to the well…
We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)--a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and…
Superconductivity emerges from the cuprate antiferromagnetic Mott state with hole doping. The resulting electronic structure is not understood, although changes in the state of oxygen atoms appear paramount. Hole doping first destroys the…
The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. Observed resonances can be attributed to p-shell…
A novel way to realize a pi Josephson junction is proposed, based on a weak link in an unconventional d-wave superconductor with appropriately chosen boundary geometry. The critical current of such a junction is calculated from a fully…
In this paper, Ni-doped ZnO films were grown on a p-type silicon substrate via spray pyrolysis. The Ni dopant concentrations were varied by adjusting the weight ratio between Zinc Acetate Dehydrate (ZAD) and Nickel Chloride Hexahydrate…
Identified-hadron (PID) spectra from 2.76 TeV Pb-Pb and $p$-$p$ collisions are analyzed via a two-component (soft + hard) model (TCM) of hadron production in high-energy nuclear collisions. The Pb-Pb TCM is adopted with minor changes from a…
We propose a mechanism for nanoscale energy conversion, an electric voltage induced by a temperature gradient in a junction composed of the same material having exactly the same geometric sizes, but distinct shapes. The proposed effect…
We demonstrate a controllable p$-$n junction in a three$-$dimensional Dirac semimetal (DSM) Cd$_3$As$_2$ nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n$-$n…
The structural, electronic, and optical properties of metal (Si, Ge, Sn, and Pb) mono- and co-doped anatase TiO$_{2}$ nanotubes are investigated, in order to elucidate their potential for photocatalytic applications. It is found that Si…
The Fermi energies of electrons and holes and their densities in different graphene layers (GLs) in the n- and p-regions of the electrically induced n-i-p junctions formed in multiple-GL structures are calculated both numerically and using…
Having access to the chemical environment at the atomic level of a dopant in a nanostructure is crucial for the understanding of its properties. We have performed atomically-resolved electron energy-loss spectroscopy to detect individual…
Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its…
Extended defects are known to strongly affect nanoscale superconductors. Here we report the properties of superconducting nanoribbons with a constriction formed between two adjacent step-edges, by solving the Bogoliubov-de Gennes equations…
A new doping mechanism is described, whereby a doping impurity does not simply transfer charge to the bands of a host semiconductor or semimetal, but rearranges the core energy levels deep in the valence band of the host. This, in turn,…
Nitrogen doped carbon nanotubes have been synthesized using pyrolysis and characterized by Scanning Tunneling Spectroscopy and transmission electron microscopy. The doped nanotubes are all metallic and exhibit strong electron donor states…
We carefully investigate three important effects including postgrowth activation annealing, delta ({\delta}) dose and p+-GaN layer thickness and experimentally demonstrate their influence on the electrical properties of GaN p-n homojunction…
We report the local atomic and electronic structure of a nitrogen-doped graphite surface by scanning tunnelling microscopy, scanning tunnelling spectroscopy, X-ray photoelectron spectroscopy, and first-principles calculations. The…
A new gain implant design has recently been introduced to enhance the radiation resistance of low-gain avalanche diodes (LGADs) to the extreme fluences anticipated in future hadron colliders like FCC-hh. This design utilises an engineered…