相关论文: Phase Slips and Parity Jumps in Quantum Oscillatio…

We have measured the magnetoresistance of a very low density and an extremely high quality two-dimensional hole system. With increasing magnetic field applied perpendicularly to the sample we observe the sequence of insulating, $\nu=1/3$…

In a low-disorder two-dimensional electron system, when two Landau levels of opposite spin or pseudospin cross at the Fermi level, the dominance of the exchange energy can lead to a ferromagnetic, quantum Hall ground state whose gap is…

We present longitudinal and Hall magneto-resistance measurements of a ``magnetic'' two-dimensional electron gas (2DEG) formed in modulation-doped Zn$_{1-x-y}$Cd$_{x}$Mn$_{y}$Se quantum wells. The electron spin splitting is temperature and…

We investigate the effect of the filling factor on transport anisotropies, known as stripes, in high Landau levels of a two-dimensional electron gas. We find that at certain in-plane magnetic fields, the stripes orientation is sensitive to…

Nematic quantum fluids with wavefunctions that break the underlying crystalline symmetry can form in interacting electronic systems. We examine the quantum Hall states that arise in high magnetic fields from anisotropic hole pockets on the…

When Landau levels (LLs) become degenerate near the Fermi energy in the quantum Hall regime, interaction effects can drastically modify the electronic ground state. We study the quantum Hall ferromagnet formed in a two-dimensional hole gas…

We study the influence of an in-plane magnetic field and Coulomb interactions on the physics of quantum spin Hall insulators, like those in InAs/GaSb and HgTe/CdTe quantum wells. Using a Hartree-Fock mean-field theory approximation, we…

The pseudo-spin model for double layer quantum Hall system with total landau level filling factor $\nu=1$ is discussed. Unlike the "traditional" one where interlayer voltage enters as static magnetic field along pseudo- spin hard axis, in…

We investigate theoretically the spin states in InAs/AlSb/GaSb broken-gap quantum wells by solving the Kane model and the Poisson equation self-consistently. The spin states in InAs/AlSb/GaSb quantum wells are quite different from those…

Time-dependent capacitance measurements reveal an unstable phase of electrons in gallium arsenide quantum well that occurs when two Landau levels with opposite spin are brought close to degeneracy by applying a gate voltage. This phase…

InAs quantum well heterostructures are of considerable interest for mesoscopic device applications such as scanning probe and magnetic recording sensors, which require the channel to be close to the surface. Here we report on…

In condensed matter physics, the study of electronic states with SU(N) symmetry has attracted considerable and growing attention in recent years, as systems with such a symmetry can often have a spontaneous symmetry-breaking effect giving…

The even-denominator fractional quantum Hall states (FQHSs) in half-filled Landau levels are generally believed to host non-Abelian quasiparticles and be of potential use in topological quantum computing. Of particular interest is the…

The interplay between the fractional quantum Hall effect and nematicity is intriguing as it links emerging topological order and spontaneous symmetry breaking. Anisotropic fractional quantum Hall states (FQHSs) have indeed been reported in…

We study the fractional quantum Hall effect at filling fractions 7/3 and 5/2 in the presence of the spin-orbit interaction, using the exact diagonalization method and the density matrix renormalization group (DMRG) method in a spherical…

We present an experimental study of low temperature electronic transport in the hybridization gap of inverted InAs/GaSb composite quantum wells. Electrostatic gate is used to push the Fermi level into the gap regime, where the conductance…

Recent magneto-transport experiments on ultra-high mobility 2D electron systems in GaAs/AlGaAs heterostructures have revealed the existence of whole new classes of correlated many-electron states in highly excited Landau levels. These new…

Mixing of Landau levels has been understood to be essential in governing the nature of the ground state for the even-denominator fractional quantum Hall effect. The incompressibility of the ground state at filling factor $5/2$ in the strong…

We study the influence of quantizing perpendicular magnetic fields on the ground state of a bilayer with electron and hole fluids separated by an opaque tunnel barrier. In the absence of a field, the ground state at low carrier densities is…

In a Bernal-stacked graphene bilayer, an electronic state in Landau level $% N=0$ is described by its guiding-center index $X$ (in the Landau gauge) and by its valley, spin, and orbital indices $\xi =\pm K,\sigma =\pm 1,$ and $% n=0,1.$…