相关论文: Low cost Ge/Si virtual substrate through dislocati…

Electrical properties of multilayer arrays of germanium nanoclusters grown on the silicon (001) surface at low temperature have been studied. A correlation between the quantum dot (QD) density estimated from STM and the charge accumulated…

The self-organized growth of Co nanoparticles with 10 nm periodicity was achieved at room temperature on a Ag(001) surface patterned by an underlying dislocation network, as shown by real time, in situ Grazing Incidence Small and Wide Angle…

Topological lattice defects, such as dislocations and grain boundaries (GBs), are ubiquitously present in the bulk of quantum materials and externally tunable in metamaterials. In terms of robust modes, localized near the defect cores, they…

The design of strain-stable, or even strain-enhanced thermal transport materials is critical for stable operation of high-performance electronic devices. However, most nanomaterials suffer from strain-induced degradation, with even minor…

We present a design approach for realizing on-chip wavelength division demultiplexing (WDD) schemes by integrating all-dielectric metasurfaces of TiO2 nanorod arrays into a SiN waveguide. The designed metasurface locally modifies the…

We report the integration of the insulating ferromagnet GdN with epitaxial films of the topological insulator Bi2Se3 and present detailed structural, magnetic and transport characterization of the heterostructures. Fabrication of…

The recently developed precession electron diffraction (PED) technique in scanning transmission electron microscopy (STEM) has been used to elucidate the local strain distribution and crystalline misorientation in CMOS fabricated strained…

The development of Si-compatible active photonic devices is a high priority in computer and modern electronics industry. Ge is compatible with Si and is a promising light emission material. Nearly all Ge-on-Si materials reported so far were…

We investigate the effect of a crystal edge dislocation on the metallic surface of a Topological Insulator. The edge dislocation gives rise to torsion which the electrons experience as a spin connection. As a result the electrons propagate…

We investigate the band structure and topological phases of silicene embedded on halogenated Si(111) surface, by virtue of density functional theory and tight-binding calculations.Our results show that the Dirac character of low energy…

While the diffusion of hydrogen on silicon surfaces has been relatively well characterised both experimentally and theoretically, the diffusion around corners between surfaces, as will be found on nanowires and nanostructures, has not been…

Portable miniaturized energy storage micro-supercapacitor has engrossed significant attention due to its power source and energy storage capacity, replacing batteries in ultra-small electronic devices. Fabrication with porous and 2D…

The static stress needed to depin a 2D edge dislocation, the lower dynamic stress needed to keep it moving, its velocity and displacement vector profile are calculated from first principles. We use a simplified discrete model whose far…

The high cost of substrates for III-V growth can be cost limiting for technologies that require large semiconductor areas. Thus, being able to separate device layers and reuse the original substrate is highly desirable, but existing…

The epitaxial growth of functional materials using a substrate with a graphene layer is a highly desirable method for improving structural quality and obtaining free-standing epitaxial nano-membranes for scientific study, applications, and…

We have grown germanium selenide (GeSe) triangular nanoplate arrays (TNAs) with a high density (3.82E+6 / mm2) on the Si (111) substrate using a simple thermal evaporation method. The thickness and trilateral lengths of a single triangular…

Remote epitaxy has garnered considerable attention as a promising method that facilitates the growth of thin films that replicate the crystallographic characteristics of a substrate by utilizing two-dimensional (2D) material interlayers…

An hyperelastic biphasic model is presented. For slow-draining problems (permeability less than 1\times10-2 mm4 N-1 s-1), numerical instabilities in the form of non-physical oscillations in the pressure field are observed in 3D problems…

We propose a new approach for reconstructing the 3D spatial distribution of small dislocation loops (DLs) from 2D TEM micrographs. This method is demonstrated for small DLs in tungsten, formed by low-dose ion-implantation, that appear as…

The Te-covered Si(111) surface has received recent interest as a template for the epitaxy of van der Waals (vdW) materials, e.g. Bi$_2$Te$_3$. Here, we report the formation of a Te buffer layer on Si(111)$-$(7$\times$7) by low-energy…