相关论文: Read Disturb Errors in MLC NAND Flash Memory

Prices of NAND flash memories are falling drastically due to market growth and fabrication process mastering while research efforts from a technological point of view in terms of endurance and density are very active. NAND flash memories…

Read disturbance in modern DRAM chips is a widespread phenomenon and is reliably used for breaking memory isolation, a fundamental building block for building robust systems. RowHammer and RowPress are two examples of read disturbance in…

We experimentally demonstrate the effects of read disturbance (RowHammer and RowPress) and uncover the inner workings of undocumented read disturbance defense mechanisms in High Bandwidth Memory (HBM). Detailed characterization of six real…

We experimentally demonstrate a new widespread read disturbance phenomenon, ColumnDisturb, in real commodity DRAM chips. By repeatedly opening or keeping a DRAM row (aggressor row) open, we show that it is possible to disturb DRAM cells…

With the ever-growing storage density, high-speed, and low-cost data access, flash memory has inevitably become popular. Multi-level cell (MLC) NAND flash memory, which can well balance the data density and memory stability, has occupied…

Recent development in memory technologies has introduced Spin-Transfer Torque Magnetic RAM (STT-MRAM) as the most promising replacement for SRAMs in on-chip cache memories. Besides its lower leakage power, higher density, immunity to…

The read channel in Flash memory systems degrades over time because the Fowler-Nordheim tunneling used to apply charge to the floating gate eventually compromises the integrity of the cell because of tunnel oxide degradation. While…

We propose a novel solid-state disk (SSD) architecture that utilizes a double-data-rate synchronous NAND flash interface for improving read and write performance. Unlike the conventional design, the data transfer rate in the proposed design…

Multiple reads of the same Flash memory cell with distinct word-line voltages provide enhanced precision for LDPC decoding. In this paper, the word-line voltages are optimized by maximizing the mutual information (MI) of the quantized…

Semiconductor NAND Flash based memory technology dominates the electronic Non-Volatile storage media market. Though NAND Flash offers superior performance and reliability over conventional magnetic HDDs, yet it suffers from certain…

In this work, we study a recently proposed direct shaping code for flash memory. This rate-1 code is designed to reduce the wear for SLC (one bit per cell) flash by minimizing the average fraction of programmed cells when storing structured…

The progress in neuromorphic computing is fueled by the development of novel nonvolatile memories capable of storing analog information and implementing neural computation efficiently. However, like most other analog circuits, these devices…

The NAND flash memory channel is corrupted by different types of noises, such as the data retention noise and the wear-out noise, which lead to unknown channel offset and make the flash memory channel non-stationary. In the literature,…

On-chip memory (usually based on Static RAMs-SRAMs) are crucial components for various computing devices including heterogeneous devices, e.g., GPUs, FPGAs, ASICs to achieve high performance. Modern workloads such as Deep Neural Networks…

Although NAND flash memory has achieved continuous capacity improvements via advanced 3D stacking and multi-level cell technologies, these innovations introduce new reliability challenges, particularly lateral charge spreading (LCS), absent…

Over the past two decades, the storage capacity and access bandwidth of main memory have improved tremendously, by 128x and 20x, respectively. These improvements are mainly due to the continuous technology scaling of DRAM (dynamic…

Crossbar arrays using emerging non-volatile memory technologies such as Resistive RAM (ReRAM) offer high density, fast access speed and low-power. However the bandwidth of the crossbar is limited to single-bit read/write per access to avoid…

This paper summarizes our work on experimental characterization and analysis of reduced-voltage operation in modern DRAM chips, which was published in SIGMETRICS 2017, and examines the work's significance and future potential. We take a…

Because deep neural networks (DNNs) rely on a large number of parameters and computations, their implementation in energy-constrained systems is challenging. In this paper, we investigate the solution of reducing the supply voltage of the…

Embedded systems or micro controller based modules have become increasingly prevalent in our daily lives. However, the security of embedded devices as well as the authenticity of hardware has become an increasing concern within the growing…