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相关论文: Early stage of CVD graphene synthesis on Ge(001) s…

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Germanium is emerging as the substrate of choice for the growth of graphene in CMOS-compatible processes. For future application in next generation devices the accurate control over the properties of high-quality graphene synthesized on Ge…

材料科学 · 物理学 2018-05-04 A. M. Scaparro , V. Miseikis , C. Coletti , A. Notargiacomo , M. Pea , M. De Seta , L. Di Gaspare

Chemical vapor deposition (CVD) is an important method to synthesis grapheme on a substract. Recently, Cu becomes the most popular CVD substrate for graphene growth. Here, we combine electronic structure calculation, molecular dynamics…

材料科学 · 物理学 2011-09-14 Wenhua Zhang , Ping Wu , Zhenyu Li , Jinlong Yang

We present results on the deposition and characterization of defected graphene by the chemical vapor deposition (CVD) method. The source of carbon/carbon-containing radicals is thermally decomposed acetone (C2H6CO) in Ar main gas flow. The…

介观与纳米尺度物理 · 物理学 2017-11-22 T. I. Milenov , I. Avramova , E. Valcheva , G. V. Avdeev , S. Rusev , S. Kolev , I. Balchev , I. Petrov , D. Pishinkov , V. N. Popov

Understanding the competition between first-layer lateral expansion and second-layer nucleation is essential for layer-controlled graphene growth via chemical vapor deposition (CVD). Building on our previous phase diagram framework based on…

材料科学 · 物理学 2026-05-21 Tongtong Wang , Ke Jin , Yishi Zhang , Dajun Shu

The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of…

The fundamental properties of graphene are making it an attractive material for a wide variety of applications. Various techniques have been developed to produce graphene and recently we discovered the synthesis of large area graphene by…

We produce multilayer graphene by the Chemical Vapor Deposition (CVD) method at atmospheric pressure and 1000 {\deg}C, using flexible copper substrates as catalyst and liquid hexane as the source of carbon. We designed an optical device to…

介观与纳米尺度物理 · 物理学 2012-03-01 C. Bautista , D. Mendoza

Plasma-enhanced chemical vapor deposition (PECVD) provides a low-temperature, highly-efficient, and catalyst-free route to fabricate graphene materials by virtue of the unique properties of plasma. In this paper, we conduct reactive…

等离子体物理 · 物理学 2022-05-18 Shiwen Wu , Dezhao Huang , Haoliang Yu , Siyu Tian , Arif Malik , Tengfei Luo , Guoping Xiong

Graphene growth by chemical vapor deposition has received a lot of attention recently owing to the ease with which large area films can be grown, but growth of large domain or equivalently large grain size has not been reported yet. In this…

Graphene has been suggested as an ultimately thin functional coating for metallurgical alloys such as steels. However, even on pure iron (Fe), the parent phase of steels, growth of high quality graphene films remains largely elusive to…

We have used Low Energy Electron Microscopy (LEEM) and Photo Emission Electron Microscopy (PEEM) to study and improve the quality of graphene films grown on Ir(111) using chemical vapor deposition (CVD). CVD at elevated temperature already…

This work reports the peculiar properties of a graphene film prepared by the chemical vapor deposition (CVD) of ethylene in high vacuum on a well oriented and carefully cleaned Pt(111) crystal surface maintained at high temperature. In-situ…

介观与纳米尺度物理 · 物理学 2015-06-15 E. Cazzanelli , T. Caruso , M. Castriota , A. R. Marino , A. Politano , G. Chiarello , M. Giarola , G. Mariotto

We report graphene films composed mostly of one or two layers of graphene grown by controlled carbon precipitation on the surface of polycrystalline Ni thin films during atmospheric chemical vapor deposition(CVD). Controlling both the…

An investigation of the early stage formation of graphene on the C-face of 6H-SiC is presented. We show that the sublimation of few atomic layers of Si out of the SiC substrate is not homogeneous. In good agreement with the results of…

材料科学 · 物理学 2009-11-13 N. Camara , G. Rius , J. -R. Huntzinger , A. Tiberj , L. Magaud , N. Mestres , P. Godignon , J. Camassel

We report nanocrystalline carbon impurities coexisting with graphene synthesized via chemical vapor deposition (CVD) on platinum. We observe micron-size island-like impurity layers, which can easily be mistaken for second graphene layers in…

介观与纳米尺度物理 · 物理学 2014-08-04 Jinglei Ping , Michael S. Fuhrer

Steeping interest on graphene research in basic sciences and applications emphasizes the need for an economical means of synthesizing it. We report a method for the synthesis of graphene on commercially available stainless steel foils using…

介观与纳米尺度物理 · 物理学 2011-09-22 Robin John , A Ashokreddy , C Vijayan , T Pradeep

Chemical Vapor Deposition (CVD) of graphene on copper is one of the most efficient technologies for producing high quality graphene for large areas. Nevertheless, still high pressures and big quantities of precursor gas are currently…

材料科学 · 物理学 2014-09-18 V-M. Freire , A. Ramirez , E. Pascual , E. Bertran , J-L. Andujar

Applying time-dependent photoemission we unravel the graphene growth process on a metallic surface by chemical vapor deposition (CVD). Graphene CVD growth is in stark contrast to the standard growth process of two--dimensional films because…

材料科学 · 物理学 2015-05-13 Alexander Grüneis , Kurt Kummer , Denis V. Vyalikh

Graphene is a material with enormous potential for numerous applications. Therefore, significant efforts are dedicated to large-scale graphene production using a chemical vapor deposition (CVD) technique. In addition, research is directed…

Understanding the atomistic mechanism in graphene growth is crucial for controlling the number of layers or domain sizes to meet practical needs. In this work, focusing on the growth of graphene by chemical vapor deposition on copper…

材料科学 · 物理学 2024-06-12 Tongtong Wang , Jian Zheng , Xin Wei , Dajun Shu
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