相关论文: Pseudospin-driven spin relaxation mechanism in gra…

We report the first measurement of 1/f type noise associated with electronic spin transport, using single layer graphene as a prototypical material with a large and tunable Hooge parameter. We identify the presence of two contributions to…

We describe a broadly-applicable theory of spin relaxation in materials with incoherent charge transport; examples include amorphous inorganic semiconductors, organic semiconductors, quantum dot arrays, and systems displaying…

The spin-orbit couplings (SOCs) of hydrogenated and fluorinated graphenes are calculated from the first principles method. It is found that the SOC-induced band splittings near their Fermi energies can be significantly enhanced to the order…

The negligible intrinsic spin-orbit coupling (SOC) in graphene can be enhanced by proximity effects in stacked heterostructures of graphene and transition metal dichalcogenides (TMDCs). The composition of the TMDC layer plays a key role in…

Large spin-orbital proximity effects have been predicted in graphene interfaced with a transition metal dichalcogenide layer. Whereas clear evidence for an enhanced spin-orbit coupling has been found at large carrier densities, the type of…

We extend the electrodynamics of two dimensional electron gases to account for the extrinsic spin Hall effect (SHE). The theory is applied to doped graphene decorated with a random distribution of absorbates that induce spin-orbit coupling…

Modifying the hexagonal lattices of graphene enables the repositioning and merging of the Dirac cones which proves to be a key element in the use of these materials for alternative electronic applications such as valleytronics. Here we…

Disorder in spin-orbit (SO) coupling is an important feature of real low-dimensional electron structures. We study spin relaxation due to such a disorder as well as resulting abilities of spin manipulation. The spin relaxation reveals…

Van der Waals interactions with transition metal dichalcogenides was shown to induce strong spin-orbit coupling (SOC) in graphene, offering great promises to combine large experimental flexibility of graphene with unique tuning capabilities…

Understanding substrate effects on spin dynamics and relaxation in two-dimensional (2D) materials is of key importance for spintronics and quantum information applications. However, the key factors that determine the substrate effect on…

We study the spin relaxation in a single-electron bilayer graphene quantum dot due to the spin-orbit coupling. The spin relaxation is assisted by the emission of acoustic phonons via the bond-length change and deformation potential…

Pseudospin, an additional degree of freedom inherent in graphene, plays a key role in understanding many fundamental phenomena such as the anomalous quantum Hall effect, electron chirality and Klein paradox. Unlike the electron spin, the…

We present a combined group-theoretical and tight-binding approach to calculate the intrinsic spin-orbit coupling (SOC) in ABC stacked trilayer graphene. We find that compared to monolayer graphene, a larger set of d orbitals (in particular…

The theoretically predicted intrinsic spin relaxation time of up to 1 $\mu s$ in graphene along with extremely high mobilities makes it a promising material in spintronics. In spite of extensive experimental studies of spin relaxation and…

Electrons in graphene are theoretically expected to retain spin states much longer than most materials, making graphene a promising platform for spintronics and quantum information technologies. Here, we use first-principles density-matrix…

Graphene is an attractive material for spintronics due to theoretical predictions of long spin lifetimes arising from low spin-orbit and hyperfine couplings. In experiments, however, spin lifetimes in single layer graphene (SLG) measured…

We investigate relaxation and dephasing of an electron spin confined in a semiconductor quantum dot and subject to spin-orbit coupling. Even in vanishing magnetic field, B = 0, slow noise coupling to the electron's orbital degree of freedom…

We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau_S in…

Inducing and controlling spin-orbit coupling (SOC) in graphene is key to create topological states of matter, and for the realization of spintronic devices. Placing graphene onto a transition metal dichalcogenide is currently the most…

Graphene is an interesting material for spintronics, showing long spin relaxation lengths even at room temperature. For future spintronic devices it is important to understand the behavior of the spins and the limitations for spin transport…