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We show evidence of the backscattering of quantum Hall edge channels in a narrow graphene Hall bar, induced by the gating effect of the conducting tip of a Scanning Gate Microscope, which we can position with nanometer precision. We show…

介观与纳米尺度物理 · 物理学 2017-11-17 Lennart Bours , Stefano Guiducci , Alina Mreńca-Kolasińska , Bartłomiej Szafran , Jan C Maan , Stefan Heun

The quantum Hall effect is the seminal example of topological protection, as charge carriers are transmitted through one-dimensional edge channels where backscattering is prohibited. Graphene has made its marks as an exceptional platform to…

介观与纳米尺度物理 · 物理学 2021-07-14 Nicolas Moreau , Boris Brun , Sowmya Somanchi , Kenji Watanabe , Takashi Taniguchi , Christoph Stampfer , Benoit Hackens

In this paper, we develop a theory of edge effects in graphene for its applications to nanoantennas in the terahertz, infrared, and visible frequency ranges. Its characteristic feature is selfconsistence reached due the formulation in terms…

介观与纳米尺度物理 · 物理学 2023-05-26 Tomer Berghaus , Touvia Miloh , Oded Gottlieb , Gregory Slepyan

We have investigated the magnetotransport properties of a single-layer graphene Hall bar with additional graphene side gates. The side gating in the absence of a magnetic field can be modeled by considering two parallel conducting channels…

介观与纳米尺度物理 · 物理学 2009-11-13 F. Molitor , J. Güttinger , C. Stampfer , D. Graf , T. Ihn , K. Ensslin

The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we…

介观与纳米尺度物理 · 物理学 2013-01-08 I. J. Vera-Marun , P. J. Zomer , A. Veligura , M. H. D. Guimarães , L. Visser , N. Tombros , H. J. van Elferen , U. Zeitler , B. J. van Wees

We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at…

The one-dimensional side gate based on graphene edges shows a significant capability of reducing the channel length of field-effect transistors, further increasing the integration density of semiconductor devices. The nano-scale electric…

The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case…

Various mesoscopic devices exploit electrostatic side gates for their operation. In this paper, we investigate how voltage-biasing of graphene side gates modulates the electrical transport characteristics of graphene channel. We explore…

介观与纳米尺度物理 · 物理学 2014-10-29 Ching-Tzu Chen , Tony Low , Hsin-Ying Chiu , Wenjuan Zhu

We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that…

Band gap engineering in graphene may open the routes towards transistor devices in which electric current can be switched off and on at will. One may, however, ask if a semiconducting band gap alone is sufficient to quench the current in…

介观与纳米尺度物理 · 物理学 2012-11-12 G. Tkachov , Martina Hentschel

Numerical calculations have been performed to elucidate unconventional electronic transport properties in disordered nanographene ribbons with zigzag edges (zigzag ribbons). The energy band structure of zigzag ribbons has two valleys that…

介观与纳米尺度物理 · 物理学 2009-01-07 Katsunori Wakabayashi , Yositake Takane , Masayuki Yamamoto , Manfred Sigrist

The edge states which were observed on a linear edge of graphene may also persist on a curved edge. We calculate the elastic transport scattering cross section on a graphene nanohole supporting the edge states. Resonant peaks in the gate…

介观与纳米尺度物理 · 物理学 2015-11-16 I. V. Zagorodnev , Zh. A. Devizorova , V. V. Enaldiev

Recent experimental findings and theoretical predictions suggest that nitrogen-doped CVD-grown graphene may give rise to electronic band gaps due to impurity distributions which favour segregation on a single sublattice. Here we demonstrate…

介观与纳米尺度物理 · 物理学 2016-02-09 Thomas Aktor , Antti-Pekka Jauho , Stephen R. Power

In this work we test graphene electrodes in nano-metric channel n-type Organic Field EffectTransistors (OFETs) based on thermally evaporated thin films of perylene-3,4,9,10-tetracarboxylic acid diimide derivative (PDIF-CN2). By a thorough…

应用物理 · 物理学 2018-10-31 F. Chianese , A. Candini , M. Affronte , N. Mishra , C. Coletti , A. Cassinese

Quantum Hall effects offer a formidable playground for the investigation of quantum transport phenomena. Edge modes can be detected, branched, and mixed by designing a suitable potential landscape in a two-dimensional conducting system…

We study the existence of edge modes in gapped Moir\'e superlattices in graphene monolayer ribbons. We find that the superlattice bands acquire finite Chern numbers, which lead to a Valley Hall Effect. The presence of dispersive edge modes…

介观与纳米尺度物理 · 物理学 2018-01-17 Rory Brown , Niels R. Walet , Francisco Guinea

We study the interplay between lateral confinement and photon-induced processes on the electronic properties of illuminated graphene nanoribbons. We find that by tuning the device setup (edges geometries, ribbon width and polarization…

介观与纳米尺度物理 · 物理学 2012-12-19 Hernan L. Calvo , Pablo M. Perez-Piskunow , Stephan Roche , Luis E. F. Foa Torres

Graphene is an attractive electrode material to contact nanostructures down to the molecular scale since it can be gated electrostatically. Gating can be used to control the doping and the energy level alignment in the nanojunction, thereby…

介观与纳米尺度物理 · 物理学 2016-01-20 Nick R. Papior , Tue Gunst , Daniele Stradi , Mads Brandbyge

Graphene nanoribbons' electronic transport properties strongly depend on the type of edge, armchair, zigzag or other, and on edge functionalization that can be used for band-gap engineering. For only partly hydrogenated edges interesting…

介观与纳米尺度物理 · 物理学 2021-11-12 Sebastian Schneider , Regina Hoffmann-Vogel
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