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Transistor miniaturization requires controlling gate leakage through ultrathin dielectrics and minimizing source/drain contact resistance. Although two-dimensional (2D) semiconductors offer excellent electrostatic control, their interfaces…

介观与纳米尺度物理 · 物理学 2026-04-24 Mahdi Pourfath , Tibor Grasser

The idea of combining different two-dimensional (2D) crystals in van der Waals heterostructures (vdWHs) has led to a new paradigm for band structure engineering with atomic precision. Due to the weak interlayer couplings, the band…

介观与纳米尺度物理 · 物理学 2017-03-10 Kirsten T. Winther , Kristian S. Thygesen

Van der Waals materials enable the construction of atomically sharp interfaces between compounds with distinct crystal and electronic properties. This is dramatically exploited in moir\'e systems, where a lattice mismatch or twist between…

van der Waals stacking of two-dimensional (2D) materials offers a powerful platform for engineering material interfaces with tailored electronic and optical properties. While most van der Waals multilayers have featured inorganic…

The electronic band structure of atomically thin semiconductors can be tuned by the application of a perpendicular electric field. The principle was demonstrated experimentally shortly after the discovery of graphene by opening a finite…

介观与纳米尺度物理 · 物理学 2022-08-23 Daniil Domaretskiy , Marc Philippi , Marco Gibertini , Nicolas Ubrig , Ignacio Gutiérrez-Lezama , Alberto F. Morpurgo

A van der Waals (vdW) charge qubit, electrostatically confined within two-dimensional (2D) vdW materials, is proposed as building block of future quantum computers. Its characteristics are systematically evaluated with respect to its…

介观与纳米尺度物理 · 物理学 2022-11-04 Jiang Cao , Guido Gandus , Tarun Agarwal , Mathieu Luisier , Youseung Lee

Layered two-dimensional (2D) materials exhibit unique properties, expanding opportunities in material design. We investigate MX$_2$ transition metal dichalcogenides (TMDCs) (M = Mo, W; X = S, Se, Te) in homo- and heterobilayers with…

材料科学 · 物理学 2025-03-13 Yu-Hsiu Lin , William P. Comaskey , Jose L. Mendoza-Cortes

Stacked van der Waals (vdW) heterostructures where semi-conducting two-dimensional (2D) materials are contacted by overlayed graphene electrodes enable atomically-thin, flexible electronics. We use first-principles quantum transport…

材料科学 · 物理学 2017-05-24 Daniele Stradi , Nick R. Papior , Mads Brandbyge

We study the dynamical properties of point-like defects, represented by monoatomic chalcogen vacancies, in WS$_2$-graphene and MoS$_2$-graphene heterobilayers. Employing a multidisciplinary approach based on the combination of ab initio,…

介观与纳米尺度物理 · 物理学 2023-02-15 Daniel Hernangómez-Pérez , Andrea Donarini , Sivan Refaely-Abramson

Artificially constructed van der Waals heterostructures (vdWHs) provide an ideal platform for realizing emerging quantum phenomena in condensed matter physics. Two methods for building vdWHs have been developed: stacking two-dimensional…

材料科学 · 物理学 2020-12-30 Wei Yao , Martin Aeschlimann , Shuyun Zhou

Two-dimensional transition metal dichalcogenides (TMDs) exhibit an extensive variety of novel electronic properties, such as charge density wave quantum spin Hall phenomena, superconductivity, and Dirac and Weyl semi-metallic properties.…

强关联电子 · 物理学 2023-09-15 S. Koley

Van der Waals (vdW) heterobilayers formed by two-dimensional (2D) transition metal dichalcogenides (TMDCs) created a promising platform for various electronic and optical properties. ab initio band results indicate that the band offset of…

材料科学 · 物理学 2020-09-04 Yuanyuan Wang , Fengping Li , Wei Wei , Baibiao Huang , Ying Dai

Defect-free epitaxial growth of 2D materials is one of the holy grails for a successful integration of van der Waals (vdW) materials in the semiconductor industry. The large-area (quasi-)vdW epitaxy of layered 2D chalcogenides is…

Van der Waals heterostructures form a massive interdisciplinary research field, fueled by the rich material science opportunities presented by layer assembly of artificial solids with controlled composition, order and relative rotation of…

Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable semiconducting materials known. Their unique optical, electronic and mechanical properties hold great potential for harnessing them as key components in…

介观与纳米尺度物理 · 物理学 2016-02-10 Song-Lin Li , Kazihito Tsukagoshi , Emanuele Orgiu , Paolo Samorì

Two-dimensional (2D) van der Waals ferroelectrics are recognized for enabling many applications, from memory and logic to neuromorphic computing, as well as transforming other materials to control electronic phase transitions and…

Van der Waals heterostructures formed by stacking of various two-dimensional materials are promising in electronic applications. However, the performances of most reported electronic devices based on van der Waals heterostructures are far…

介观与纳米尺度物理 · 物理学 2019-04-04 Wei Li , Xiang Xiao , Huilong Xu

Two-dimensional (2D) materials have recently been the focus of extensive research. By following a similar trend as graphene, other 2D materials including transition metal dichalcogenides (MX2) and metal mono-chalcogenides (MX) show great…

Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into interfaces and heterostructures. Their potential for…

The high mechanical strength and excellent flexibility of 2D materials such as graphene are some of their most important properties [1]. Good flexibility is key for exploiting 2D materials in many emerging technologies, such as wearable…

介观与纳米尺度物理 · 物理学 2018-09-05 A. P. Rooney , Z. Li , W. Zhao , A. Gholinia , A. Kosikov , G. Auton , F. Ding , R. V. Gorbachev , R. J. Young , S. J Haigh
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