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相关论文: Electrical-equivalent van der Waals gap for 2D bil…

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Van der Waals heterostructures of two-dimensional materials have opened up new frontiers in condensed matter physics, unlocking unexplored possibilities in electronic and photonic device applications. However, the investigation of wide-gap…

介观与纳米尺度物理 · 物理学 2023-07-26 A. Söll , E. Lopriore , A. K. Ottesen , J. Luxa , G. Pasquale , J. Sturala , F. Hájek , V. Jarý , D. Sedmidubský , K. Mosina , A. Kis , Z. Sofer

Control of atomic-scale interfaces between materials with distinct electronic structures is crucial for the design and fabrication of most electronic devices. In the case of two-dimensional (2D) materials, disparate electronic structures…

The electronic band structures of two-dimensional materials are significantly different from those of their bulk counterparts, due to quantum confinement and strong modifications of electronic screening. An accurate determination of…

介观与纳米尺度物理 · 物理学 2020-07-08 Tomáš Rauch , Miguel A. L. Marques , Silvana Botti

Two-dimensional (2D) transition-metal dichalcogenide (TMD) MX$_2$ (M = Mo, W; X= S, Se, Te) possess unique properties and novel applications. In this work, we perform first-principles calculations on the van der Waals (vdW) stacked MX$_2$…

Two-dimensional crystals, single sheets of layered materials, often show distinct properties desired for optoelectronic applications, such as larger and direct band gaps, valley- and spinorbit effects. Being atomically thin, the low amount…

材料科学 · 物理学 2018-11-14 Roman Kempt , Agnieszka Kuc , Jae Hyo Han , Jinwoo Cheon , Thomas Heine

Ferroelectric tunnel junctions (FTJs), which consist of two metal electrodes separated by a thin ferroelectric barrier, have recently aroused significant interest for technological applications as nanoscale resistive switching devices. So…

材料科学 · 物理学 2021-02-09 Jun Ding , Ding-Fu Shao , Ming Li , Li-Wei Wen , Evgeny Y. Tsymbal

The electronic and optical properties of monolayer transition-metal dichalcogenides (TMDs) and van der Waals heterostructures are strongly subject to their dielectric environment. In each layer the field lines of the Coulomb interaction are…

The field of two-dimensional (2D) materials has expanded to multilayered systems where electronic, optical, and mechanical properties change-often dramatically-with stacking order, thickness, twist, and interlayer spacing [1-5]. For…

材料科学 · 物理学 2019-06-27 Suk Hyun Sung , Noah Schnitzer , Lola Brown , Jiwoong Park , Robert Hovden

Tunnel junctions, a well-established platform for high-resolution spectroscopy of superconductors, require defect-free insulating barriers with clean engagement to metals on both sides. Extending the range of materials accessible to tunnel…

The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over more established 3D semiconductors while retaining some…

Bilayer two-dimensional (2D) van der Waals (vdW) materials are attracting increasing attention due to their predicted high quality electronic and optical properties. Here we demonstrate dense, selective growth of WSe2 bilayer flakes by…

Two-dimensional layered materials, such as transition metal dichalcogenides (TMDs), possess intrinsic van der Waals gap at the layer interface allowing for remarkable tunability of the optoelectronic features via external intercalation of…

材料科学 · 物理学 2024-11-25 Srihari M. Kastuar , Christopher Rzepa , Srinivas Rangarajan , Chinedu E. Ekuma

In this work, we employ the LDA, GGA and GGA with four vdW corrections to study crystal and electronic structures of bilayer transition metal dichalcogenides (TMDs) with different twist angles. We find the GGA interlayer distance of bilayer…

材料科学 · 物理学 2020-12-08 Feng Sun , Ting Luo , Lin Li , Aijun Hong , Cailei Yuan , Wei Zhang

Van der Waals (vdW) materials exhibit a variety of states that can be switched with low power at low temperatures, offering a viable cryogenic "flash memory" required for the classical control electronics for solid-state quantum information…

Van der Waals (vdW) materials have greatly expanded our design space of heterostructures by allowing individual layers to be stacked at non-equilibrium configurations, for example via control of the twist angle. Such heterostructures not…

介观与纳米尺度物理 · 物理学 2022-02-04 Xirui Wang , Kenji Yasuda , Yang Zhang , Song Liu , Kenji Watanabe , Takashi Taniguchi , James Hone , Liang Fu , Pablo Jarillo-Herrero

The electronic structure of semiconducting 2D materials such as transition metal dichalcogenides (TMDs) is known to be tunable by its environment, from simple external fields applied with electrical contacts up to complex van der Waals…

We predict a new family of robust two-dimensional (2D) topological insulators in van der Waals heterostructures comprising graphene and chalcogenides BiTeX (X=Cl, Br and I). The layered structures of both constituent materials produce a…

材料科学 · 物理学 2014-12-25 Liangzhi Kou , Shu-Chun Wu , Claudia Felser , Thomas Frauenheim , Changfeng Chen , Binghai Yan

First-principle calculations with different exchange-correlation functionals, including LDA, PBE and vdW-DF functional in form of optB88-vdW, have been performed to investigate the electronic and elastic properties of two dimensional…

材料科学 · 物理学 2015-08-31 Fan Zeng , Wei-Bing Zhang , Bi-Yu Tang

Compared to electronic phase transitions, structural phase transitions of crystals are challenging to control due to the energy cost of breaking dense solid bonds. Recently, however, electric field switching of stacking configuration…

介观与纳米尺度物理 · 物理学 2024-08-13 Maayan Vizner Stern , Simon Salleh Atri , Moshe Ben Shalom

Two-dimensional materials can be combined by placing individual layers on top of each other, so that they are bound only by their van der Waals interaction. The sequence of layers can be chosen arbitrarily, enabling an essentially…

应用物理 · 物理学 2022-03-02 Jonas Haas , Finn Ulrich , Christoph Hofer , Xiao Wang , Kai Braun , Jannik C. Meyer